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    PLCC-68 8051 siemens

    Abstract: 80C32 smd marking b4h smd marking code fj FET 80C515 80C535 80c535-n ma A235 sab-80535 SMD MARKING CODE E2H
    Text: I flB3SbOS 0002020 321 SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80CS35/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only


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    PDF 80C515/80C535 80C515/80C515-16 80C535/80C535-16 80C515 16-bit 8235b05 MQFP-80 0H35b05 PLCC-68 8051 siemens 80C32 smd marking b4h smd marking code fj FET 80C535 80c535-n ma A235 sab-80535 SMD MARKING CODE E2H

    marking code C1H SMD

    Abstract: sab-c501-l24p
    Text: SIEMENS 8-Bit CMOS Microcontroller C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/24/40 MHz operating frequency 8 K x 8 ROM C501 -1R only 256 x 8 RAM Four 8-bit ports Three 16-bit Timers / Counters (Timer 2 with Up/Down Counter feature)


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    PDF 16-bit P-DIP-40, P-LCC-44 P-MQFP-44 SAB-C501 SAF-C501 C501-L/C501-1R 80C32/C52 80C52 fl235b05 marking code C1H SMD sab-c501-l24p

    siemens sab 82538

    Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
    Text: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each


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    PDF CRC-32 fl23Sb05 siemens sab 82538 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441

    Untitled

    Abstract: No abstract text available
    Text: Infineon t e c h n o l o g i es Double Differential Magneto Resistor FP 425 L 90 Version 2.0 1.6 pin connection 1o 1 I 04 1 If delivery as tape, seperate at punching-points. 6 fingers on both sides free of lacquer 3) Center-distance between the Diff.-Systems.


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    PDF 0E35bG5 OHS00093 D13438D

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Standard EEPROM ICs SLx 24C01/02 1/2 Kbit 128/256 x 8 bit Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus Data Sheet 1998-07-27 • BEBSbDS Q i n M E b 3bb SLx 24C01/02 Revision History: Current Version: 1998-07-27 Previous Version: 06.97 Page


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    PDF 24C01/02 0535b05

    neosid v6

    Abstract: OV56 AM2 Siemens neosid v7 V55D neosid CAP neosid 3.3 NEOSID nr. 9181 Diode LT 330D
    Text: FS: 04/93 Pag« 2 SIEMENS AG IC-SPECIFICATION TUA 4300 G Table of Contents ONE CHIP CAR RADIO Differences to the last edition Page 1 Table of Contents Page 2 Functional Description, Application Page 3 . 4 Circuit Description Page 5 . 6 Block Diagram Page


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    PDF 10kHz 13kHz 2x10kHz-19kHz 3x13kHz-38kHz 57kHz V66047-S695-G100-G1 fl235b05 D137bbfl neosid v6 OV56 AM2 Siemens neosid v7 V55D neosid CAP neosid 3.3 NEOSID nr. 9181 Diode LT 330D

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFP196 NPN S ilico n RF T ra n sisto r • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz


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    PDF BFP196 900MHz Q62702-F1320 OT-143

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


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    PDF Q62702-F1489 OT-323 Q122QS3 900MHz

    XC+872

    Abstract: No abstract text available
    Text: SPD 10N10 Inf i ne on technologies Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS 100 V • Enhancement mode Drain-Source on-state resistance ñ DS on1 0.2 Q. • Avalanche rated Continuous drain current


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    PDF 10N10 11-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T XC+872

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS SIPMOS Power Transistors BUZ 210 BUZ 211 Type </> • N channel • Enhancement mode • FREDFET h BUZ 210 500 V 10.5 A ^DS on 0.6 n BUZ 211 500 V 9.0 A 0.8 Q Package1) Ordering Code TO-204 AA C67078-A1102-A2 TO-204 AA C67078-A1100-A2 Maximum Ratings


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    PDF O-204 C67078-A1102-A2 C67078-A1100-A2 fi235b05 0E35bG5

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 4M X 4-Bit Dynamic RAM 3.3 V, 4k-refresh HYB 3116400BJ/BT -50/-60/-70 Prelim inary Inform ation • • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating tem perature Fast access and cycle tim e RAS access time: 50 ns (-50 version)


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    PDF 3116400BJ/BT fi235bD5 0G714b3 6S35b05 DQ714b4

    Untitled

    Abstract: No abstract text available
    Text: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos fc flDS on Package Ordering Code BUZ 349 100 V 32 A 0.06 £2 TO-218AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit A 7 b = 27 -C


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    PDF O-218AA C67078-S3113-A2 S35bQ5 Q133777 SQT-89 B535bQ5 D13377Ã B235bG5 D13377T