PLCC-68 8051 siemens
Abstract: 80C32 smd marking b4h smd marking code fj FET 80C515 80C535 80c535-n ma A235 sab-80535 SMD MARKING CODE E2H
Text: I flB3SbOS 0002020 321 SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515/80C535 Preliminary SAB 80C515/80C515-16 SAB 80CS35/80C535-16 CMOS microcontroller with factory mask-programmable ROM CMOS microcontroller for external ROM • 8 K x 8 ROM SAB 80C515 only
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80C515/80C535
80C515/80C515-16
80C535/80C535-16
80C515
16-bit
8235b05
MQFP-80
0H35b05
PLCC-68 8051 siemens
80C32
smd marking b4h
smd marking code fj FET
80C535
80c535-n
ma A235
sab-80535
SMD MARKING CODE E2H
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marking code C1H SMD
Abstract: sab-c501-l24p
Text: SIEMENS 8-Bit CMOS Microcontroller C501 Preliminary • • • • • • • • • • • Fully compatible to standard 8051 microcontroller Versions for 12/24/40 MHz operating frequency 8 K x 8 ROM C501 -1R only 256 x 8 RAM Four 8-bit ports Three 16-bit Timers / Counters (Timer 2 with Up/Down Counter feature)
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16-bit
P-DIP-40,
P-LCC-44
P-MQFP-44
SAB-C501
SAF-C501
C501-L/C501-1R
80C32/C52
80C52
fl235b05
marking code C1H SMD
sab-c501-l24p
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siemens sab 82538
Abstract: 3tb siemens T-0657 SiEMENS PM 350 98 SAB 80188 QD70 SIEMENS ESCC8 1fa MARKING processor hbt 00 04 g Q67100-H6441
Text: SIEM ENS Enhanced Serial Communication Controller ESCC8 SAB 82538 SAF 82538 Preliminary Data 1 CMOS 1C General Features Serial Interface • Eight independent full duplex serial channels - On chip clock generation or external clock source - On chip DPLL for clock recovery of each
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CRC-32
fl23Sb05
siemens sab 82538
3tb siemens
T-0657
SiEMENS PM 350 98
SAB 80188
QD70
SIEMENS ESCC8
1fa MARKING
processor hbt 00 04 g
Q67100-H6441
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Untitled
Abstract: No abstract text available
Text: Infineon t e c h n o l o g i es Double Differential Magneto Resistor FP 425 L 90 Version 2.0 1.6 pin connection 1o 1 I 04 1 If delivery as tape, seperate at punching-points. 6 fingers on both sides free of lacquer 3) Center-distance between the Diff.-Systems.
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0E35bG5
OHS00093
D13438D
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Untitled
Abstract: No abstract text available
Text: SIEMENS Standard EEPROM ICs SLx 24C01/02 1/2 Kbit 128/256 x 8 bit Serial CMOS-EEPROM with I2C Synchronous 2-Wire Bus Data Sheet 1998-07-27 • BEBSbDS Q i n M E b 3bb SLx 24C01/02 Revision History: Current Version: 1998-07-27 Previous Version: 06.97 Page
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24C01/02
0535b05
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neosid v6
Abstract: OV56 AM2 Siemens neosid v7 V55D neosid CAP neosid 3.3 NEOSID nr. 9181 Diode LT 330D
Text: FS: 04/93 Pag« 2 SIEMENS AG IC-SPECIFICATION TUA 4300 G Table of Contents ONE CHIP CAR RADIO Differences to the last edition Page 1 Table of Contents Page 2 Functional Description, Application Page 3 . 4 Circuit Description Page 5 . 6 Block Diagram Page
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10kHz
13kHz
2x10kHz-19kHz
3x13kHz-38kHz
57kHz
V66047-S695-G100-G1
fl235b05
D137bbfl
neosid v6
OV56
AM2 Siemens
neosid v7
V55D
neosid CAP
neosid 3.3
NEOSID
nr. 9181
Diode LT 330D
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFP196 NPN S ilico n RF T ra n sisto r • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz
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BFP196
900MHz
Q62702-F1320
OT-143
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 93AW NPN Silicon RF Transistor • For low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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Q62702-F1489
OT-323
Q122QS3
900MHz
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XC+872
Abstract: No abstract text available
Text: SPD 10N10 Inf i ne on technologies Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS 100 V • Enhancement mode Drain-Source on-state resistance ñ DS on1 0.2 Q. • Avalanche rated Continuous drain current
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10N10
11-A2
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
XC+872
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Untitled
Abstract: No abstract text available
Text: SIEMENS SIPMOS Power Transistors BUZ 210 BUZ 211 Type </> • N channel • Enhancement mode • FREDFET h BUZ 210 500 V 10.5 A ^DS on 0.6 n BUZ 211 500 V 9.0 A 0.8 Q Package1) Ordering Code TO-204 AA C67078-A1102-A2 TO-204 AA C67078-A1100-A2 Maximum Ratings
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O-204
C67078-A1102-A2
C67078-A1100-A2
fi235b05
0E35bG5
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Untitled
Abstract: No abstract text available
Text: SIEM ENS 4M X 4-Bit Dynamic RAM 3.3 V, 4k-refresh HYB 3116400BJ/BT -50/-60/-70 Prelim inary Inform ation • • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating tem perature Fast access and cycle tim e RAS access time: 50 ns (-50 version)
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3116400BJ/BT
fi235bD5
0G714b3
6S35b05
DQ714b4
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Untitled
Abstract: No abstract text available
Text: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vos fc flDS on Package Ordering Code BUZ 349 100 V 32 A 0.06 £2 TO-218AA C67078-S3113-A2 Maximum Ratings Parameter Symbol Continuous drain current b Values Unit A 7 b = 27 -C
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O-218AA
C67078-S3113-A2
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
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