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    0E8000 Price and Stock

    SiTime Corporation SIT8008BI-82-30E-8.000000

    MEMS OSC XO 8.0000MHZ H/LV-CMOS
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    DigiKey SIT8008BI-82-30E-8.000000 233 1
    • 1 $1.5
    • 10 $1.431
    • 100 $1.1982
    • 1000 $0.98183
    • 10000 $0.86535
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    Bridgelux Inc BXEB-L1120Z-40E8000-C-D3

    LED MOD EB SER WH LNR STRP 4000K
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BXEB-L1120Z-40E8000-C-D3 Bulk 181 1
    • 1 $17.15
    • 10 $13.022
    • 100 $17.15
    • 1000 $10.04544
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    Newark BXEB-L1120Z-40E8000-C-D3 Bulk 100
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    • 100 $11.76
    • 1000 $9.93
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    EBV Elektronik BXEB-L1120Z-40E8000-C-D3 8 Weeks 100
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    Bridgelux Inc BXEB-L1120Z-50E8000-C-D3

    LED MOD EB SER WH LNR STRP 5000K
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    DigiKey BXEB-L1120Z-50E8000-C-D3 Bulk 95 1
    • 1 $17.09
    • 10 $12.986
    • 100 $17.09
    • 1000 $10.0375
    • 10000 $10.0375
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    Bridgelux Inc BXEB-L1120Z-30E8000-C-D3

    LED MOD EB SER WH LNR STR 3000K
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    DigiKey BXEB-L1120Z-30E8000-C-D3 Bulk 71 1
    • 1 $16.98
    • 10 $12.893
    • 100 $16.98
    • 1000 $10.0375
    • 10000 $10.0375
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    Newark BXEB-L1120Z-30E8000-C-D3 Bulk 100
    • 1 -
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    • 100 $11.76
    • 1000 $9.93
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    Gedore Torque Ltd 1500-E-8000-L

    ES TOOL MODULE EMPTY
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    DigiKey 1500-E-8000-L Bulk 1
    • 1 $44.59
    • 10 $44.59
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    0E8000 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Sharp LH28F320BFHE-PBTLEZ Driver

    Abstract: LH28F320BFHE-PBTLEZ
    Text: PRODUCT SPECIFICATION Integrated Circuits Group LH28F320BFHE-PBTLEZ Flash Memory 32Mbit 2Mbitx16 (Model Number: LHF32FEZ) Spec. Issue Date: September 13, 2004 Spec No: EL169103 LHF32FEZ • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		PDF LH28F320BFHE-PBTLEZ 32Mbit 2Mbitx16) LHF32FEZ) EL169103 LHF32FEZ Sharp LH28F320BFHE-PBTLEZ Driver LH28F320BFHE-PBTLEZ

    FW82815EM

    Abstract: FW82807A INTEL PENTIUM PROCESSOR MOBILE MODULE FW82815E gfx e4 GFX E6 pentium pro architecture FW82815EM SL4MP FW82815 360-pin BGA IBM
    Text: R Intel 815EM Chipset: 82815EM Graphics and Memory Controller Hub GMCH2-M Datasheet April 2003 Document Reference Number: 290689-002 Intel® 82815EM GMCH R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


    Original     		PDF 815EM 82815EM 82815EM FW82815EM FW82807A INTEL PENTIUM PROCESSOR MOBILE MODULE FW82815E gfx e4 GFX E6 pentium pro architecture FW82815EM SL4MP FW82815 360-pin BGA IBM

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50304-2E Stacked MCP Multi-Chip Package FLASH MEMORY & FCRAM CMOS 64 M ( x 16) FLASH MEMORY & 16 M ( × 16) Mobile FCRAMTM MB84VD23381FJ-80 • FEATURES • Power Supply Voltage of 2.7 V to 3.1 V • High Performance


    Original     		PDF DS05-50304-2E MB84VD23381FJ-80 65-ball

    MARKING HRA

    Abstract: 4kw marking
    Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 4M (×8/×16) STATIC RAM MB84VD2118XEM-70/MB84VD2119XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance


    Original     		PDF MB84VD2118XEM-70/MB84VD2119XEM-70 56-ball MB84VD2118XEM/MB84VD2119XEM MARKING HRA 4kw marking

    ba4410

    Abstract: Samsung MCP Flash Memory SAMSUNG k5 dual diode BA45 BA6511 samsung MCP K5 BA40 BA-36 BA5111 bga221
    Text: K5A3x41YT B A MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (2Mx16) Dual Bank NOR Flash Memory / 4M(256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft August 28, 2001 1.0 Final Specification


    Original     		PDF K5A3x41YT 2Mx16) 256Kx16) 66-Ball 80x11 08MAX ba4410 Samsung MCP Flash Memory SAMSUNG k5 dual diode BA45 BA6511 samsung MCP K5 BA40 BA-36 BA5111 bga221

    fw912

    Abstract: MT28F642D18 MT28F642D20 fw911 FY912 fw905
    Text: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture


    Original     		PDF MT28F642D18 MT28F642D20 59-Ball MT28F642D18 MT28F642D20 fw912 fw911 FY912 fw905

    am29dl323cb

    Abstract: DL323 DL322
    Text: PRELIMINARY Am29DL322C/Am29DL323C 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank while


    Original     		PDF Am29DL322C/Am29DL323C 16-Bit) sectm29DL323C Am29DL323 am29dl323cb DL323 DL322

    ES29DL320

    Abstract: 3FE00
    Text: EE SS II ADVANCED INFORMATION Excel Semiconductor inc. ES29DL320 32Mbit 4M x 8/2M x 16 CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory GENERAL FEATURES • Power consumption (typical values) - 15uA in standby or automatic sleep mode - 10mA active read current at 5MHz


    Original     		PDF ES29DL320 32Mbit 125oC ES29DL320 3FE00

    AM29DL320GT70

    Abstract: marking e3 6-pin
    Text: ADVANCE INFORMATION Am29DL320G 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Minimum 1 million write cycles guaranteed per sector ■ Simultaneous Read/Write operations


    Original     		PDF Am29DL320G 16-Bit) 048--Thin AM29DL320GT70 marking e3 6-pin

    A0-A21

    Abstract: M29W641D M29W641DH M29W641DL M29W641DU
    Text: M29W641DH, M29W641DL M29W641DU 64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V Core Power Supply – VCCQ = 1.8V to 3.6V for Input/Output ■ – VPP =12 V for Fast Program (optional)


    Original     		PDF M29W641DH, M29W641DL M29W641DU 120ns 32-KWord TSOP48 A0-A21 M29W641D M29W641DH M29W641DL M29W641DU

    pa 66 gf

    Abstract: M36W432BG M36W432TG AI07927 PA 6.6 GF 13
    Text: M36W432TG M36W432BG 32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit (256Kb x16) SRAM, Multiple Memory Product PRELIMINARY DATA FEATURES SUMMARY • MULTIPLE MEMORY PRODUCT – 32 Mbit (2Mb x 16), Boot Block, Flash Memory – 4 Mbit (256Kb x 16) SRAM Memory


    Original     		PDF M36W432TG M36W432BG 256Kb M36W432TG: 88BAh M36W432BG: 88BBh pa 66 gf M36W432BG M36W432TG AI07927 PA 6.6 GF 13

    samsung k5 mcp

    Abstract: SAMSUNG MCP A3240 Flash Memory SAMSUNG k5
    Text: K5A3x40YT B A MCP MEMORY Document Title Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark Preliminary 0.0 Initial Draft August 28, 2001 1.0


    Original     		PDF K5A3x40YT 4Mx8/2Mx16) 512Kx8/256Kx16) 69-Ball 08MAX samsung k5 mcp SAMSUNG MCP A3240 Flash Memory SAMSUNG k5

    DS05-50205-1E

    Abstract: MB84VD2208XEA SA70
    Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50205-1E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/×16) FLASH MEMORY & 2M (× 8/×16) STATIC RAM MB84VD2208XEA-90/MB84VD2209XEA-90 • FEATURES • Power supply voltage of 2.7 to 3.3V • High performance


    Original     		PDF DS05-50205-1E MB84VD2208XEA-90/MB84VD2209XEA-90 73-ball BGA-73P-M01) MB84VDatives DS05-50205-1E MB84VD2208XEA SA70

    floppydiskdrive

    Abstract: 4258h keyboard block diagram A218h Am486 DX instruction set real time microcontroller 8254 applications a258h pmc 4351 configuration 8250 uart HIGH SPEED FREQUENCY DIVIDER
    Text: Élan SC310 Microcontroller Programmer’s Reference Manual Rev. A, April 1996  1996 by Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics.


    Original     		PDF lanTMSC310 33-MHz floppydiskdrive 4258h keyboard block diagram A218h Am486 DX instruction set real time microcontroller 8254 applications a258h pmc 4351 configuration 8250 uart HIGH SPEED FREQUENCY DIVIDER

    TFBGA63

    Abstract: M29DW323D M29DW323DB M29DW323DT TFBGA48
    Text: M29DW323DT M29DW323DB 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional) ACCESS TIME: 70, 90ns


    Original     		PDF M29DW323DT M29DW323DB TSOP48 24Mbit TFBGA63 TFBGA63 M29DW323D M29DW323DB M29DW323DT TFBGA48

    M36W432

    Abstract: M36W432B M36W432T
    Text: M36W432T M36W432B 32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit (256K x16) SRAM, Multiple Memory Product PRODUCT PREVIEW FEATURES SUMMARY • SUPPLY VOLTAGE – VDDF = 2.7V to 3.3V SRAM ■ 4 Mbit (256K x 16 bit) – VDDS = VDDQF = 2.7V to 3.3V ■


    Original     		PDF M36W432T M36W432B M36W432T: 88BAh M36W432B: 88BBh M36W432 M36W432B M36W432T

    SGA17

    Abstract: No abstract text available
    Text: IS71V08F32XS08 IS71V16F32XS08 ISSI 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP — 32 Mbit Simultaneous Operation Flash Memory and 8 Mbit Static RAM MCP FEATURES • Power supply voltage 2.7V to 3.3V • High performance: Flash: 70ns maximum access time


    Original     		PDF IS71V08F32XS08 IS71V16F32XS08 73-ball IS71V16F32AS08-8585BI IS71V16F32BS08-8585BI IS71V16F32CS08-8585BI SGA17

    Transistor 5C5

    Abstract: No abstract text available
    Text: IC71V08F32xS08 IC71V16F32xS08 Document Title 3.0 Volt-Only Flash & SRAM COMBO with Stacked Multi-Chip Package MCP - 32 Mbit Simultaneous Operation Flash Memory and 8 Mbit Static RAM Revision History Revision No History Draft Date 0A 0B Initial Draft Add 73 ball BGA package


    Original     		PDF IC71V08F32xS08 IC71V16F32xS08 MCP001-0B 73-ball IC71V16F32CS08-85B73 IC71V16F32DS08-85B73 Transistor 5C5

    MARKING HRA

    Abstract: SEC MCP 4kw marking
    Text: FUJITSU SEMICONDUCTOR DATA SHEET SMCP0.3E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 16M (x8/×16) FLASH MEMORY & 2M (×8/×16) STATIC RAM MB84VD2108XEM-70/MB84VD2109XEM-70 • FEATURES • Power Supply Voltage of 2.7 V to 3.3 V • High Performance


    Original     		PDF MB84VD2108XEM-70/MB84VD2109XEM-70 56-ball MB84VD2108XEM/MB84VD2109XEM MARKING HRA SEC MCP 4kw marking

    LRS1806A

    Abstract: No abstract text available
    Text: Date Aug. 7.2001 64M x16 Flash + 16M (x16) SCRAM LRS1806A sharp LRS1806A • Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited without the express written permission


    Original     		PDF LRS1806A LRS1806A

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE0.2E FLASH MEMORY CMOS 16 M 2M x 8/1M × 16 BIT MirrorFlashTM MBM29LV160TM/BM 90 n DESCRIPTION The MBM29LV160TM/BM is a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes by 8 bits or 2M words by 16 bits. The MBM29LV160TM/BM is offered in 48-pin TSOP(I) and 48-ball FBGA. The device is designed to


    Original     		PDF MBM29LV160TM/BM 32M-bit, 48-pin 48-ball

    LH28F640BFHB-PTTL60

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F640BFHB-PTTL60 Flash Memory 64M 4M x 16 (Model No.: LHF64FBD) Spec No.: FM028013 Issue Date: August 27,2002 sharp LHF64FBD x Handle this document carefully for it contains material protected by international copyright law. Any reproduction,


    Original     		PDF LH28F640BFHB-PTTL60 LHF64FBD) FM028013 LHF64FBD LH28F640BFHB-PTTL60

    LRS1B06

    Abstract: No abstract text available
    Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LRS1B06 Stacked Chip 128M x16 Boot Block Flash and 32M (x16) SCRAM and 8M (x16) SRAM (Model No.: LRS1B06) Spec No.: EL147068 Issue Date: January 27, 2003 sharp L R S1 B 0 6 • Handle this document carefully for it contains material protected by international copyright law.


    Original     		PDF LRS1B06 LRS1B06) EL147068 LRS1B06

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM MB84VD2218XA-10/MB84VD2219XA-10 • FEATURES • Power supply voltage of 2.7 to 3.6 V • High performance


    OCR Scan     		PDF 8/x16) MB84VD2218XA-10/MB84VD2219XA-10 100ns 77-ball F9903