fw912
Abstract: MT28F642D18 MT28F642D20 fw911 FY912 fw905
Text: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture
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MT28F642D18
MT28F642D20
59-Ball
MT28F642D18
MT28F642D20
fw912
fw911
FY912
fw905
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fw912
Abstract: MT28F642D18 MT28F642D20
Text: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture
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Original
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MT28F642D18
MT28F642D20
59-Ball
MT28F642D18
MT28F642D20
fw912
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PDF
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FW912
Abstract: No abstract text available
Text: 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture
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Original
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MT28F642D18
MT28F642D20
FW912
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PDF
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fw912
Abstract: fw911 FX912 FY912 FY-912 FX911
Text: ADVANCE‡ 4 MEG x 16 ASYNC/PAGE/BURST FLASH MEMORY FLASH MEMORY MT28F642D18 MT28F642D20 Low Voltage, Extended Temperature 0.18µm Process Technology FEATURES PIN ASSIGNMENT 59-Ball FBGA • Single device supports asynchronous, page, and burst operations • Flexible dual-bank architecture
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Original
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MT28F642D18
MT28F642D20
80blocks
fw912
fw911
FX912
FY912
FY-912
FX911
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PDF
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