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    Untitled

    Abstract: No abstract text available
    Text: IRFS150A A dvanced Power MOSEET FEATURES B VDSS - 100 V Rugged Gate Oxide Technology ^ D S o n = 0 -0 ^ ^ • Lower Input Capacitance lD = 31 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA (Max.) @ V DS= 1 0 0 V


    OCR Scan     		PDF IRFS150A 0G3b333 QG3b33M G03b335

    Untitled

    Abstract: No abstract text available
    Text: KA3S0880RF SAMSUNG POWER SWITCH Sa m su n g P o w e r Sw it c h The SPS product family is specially designed for an offline SMPS with minimal external component. The SPS consist of high voltage Power SenseFET and current mode control IC. Included control IC features a tr-immed oscillator, under voltage lock out, leading edge blanking,


    OCR Scan     		PDF KA3S0880RF 0G3b333 QG3b33M G03b335

    Untitled

    Abstract: No abstract text available
    Text: SSF17N60A Advanced Power MOSFET FEATURES = b v d ss 600 V • Avalanche Rugged Technology ^D S on = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 pA(Max.) @ V 03 = 600V


    OCR Scan     		PDF SSF17N60A D04D171 0G3b333 QG3b33M G03b335

    Untitled

    Abstract: No abstract text available
    Text: IRFP440A Advanced Power MOSEET FEATURES BVDSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 500V ■ Lower RDS(ON) 00


    OCR Scan     		PDF IRFP440A G03b332 0G3b333

    Untitled

    Abstract: No abstract text available
    Text: IRFP250A Advanced Power MOSFET FEATURES B V dss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 32 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V


    OCR Scan     		PDF IRFP250A G03b332 0G3b333

    to 125-10

    Abstract: Korea Electronics TRANSISTOR KA350
    Text: KA350 Industrial ELECTRONICS T O -3 P 3-TERMINAL 3A POSITIVE ADJUSTABLE VOLTAGE REGULATORS The KA350 is an adjustable 3-terminal positive voltage regulator capa­ ble of supplying in excess of 3.0 A over an output voltage range of 1 2V to 3 3 V T 0 .2 2 0


    OCR Scan     		PDF KA350 KA350 KA350H G03b0b7 G03b332 0G3b333 to 125-10 Korea Electronics TRANSISTOR

    SSF4N90AS

    Abstract: EL DRIVER 3-STAGE
    Text: SSF4N90AS Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA Max. @ VDS= 900V


    OCR Scan     		PDF SSF4N90AS ib4142 0DM0201 003b333 003b33M D03b335 SSF4N90AS EL DRIVER 3-STAGE

    tvn 610

    Abstract: SSF45N20A
    Text: SSF45N20A Advanced Power MOSFET FEATURES BV0SS = 200 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VDS = 200V


    OCR Scan     		PDF SSF45N20A 003b333 003b33M D03b335 tvn 610 SSF45N20A

    induction lamp ballast

    Abstract: SGH40N60UF igbt for HIGH POWER induction heating 20A igbt
    Text: SGH40N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=20A) * High Input Impedance APPLICATIONS * * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls Power Supply Lamp Ballast


    OCR Scan     		PDF SGH40N60UF O-220-F-4L DD3b33E 003b333 induction lamp ballast SGH40N60UF igbt for HIGH POWER induction heating 20A igbt

    Untitled

    Abstract: No abstract text available
    Text: IRFP340A A dvanced Power MOSEET FEATURES B V DSS = 4 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1 1 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V


    OCR Scan     		PDF IRFP340A O-220-F-4L DD3b33E GG3b333

    Untitled

    Abstract: No abstract text available
    Text: a PRELIMINARY Advanced Micro Devices Am79C983 Integrated Multiport Repeater 2 IMR2 DISTINCTIVE CHARACTERISTICS • Repeater functionality compliant with IEEE 802.3 Repeater Unit specifications ■ Hardware implementation of Management Informa­ tion Base (M1B) with all of the counters, attributes,


    OCR Scan     		PDF Am79C983 vid03b3Ã 132-Pin PQB132

    Untitled

    Abstract: No abstract text available
    Text: SSF8N90A Advanced Power MOSFET FEATURES B V DSs = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe OperatingArea ■ Lower Leakage Current :25pA Max. @ VDS= 900V


    OCR Scan     		PDF SSF8N90A 0G3b333 QG3b33M G03b335

    Untitled

    Abstract: No abstract text available
    Text: SSH17N60A A d van ced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V


    OCR Scan     		PDF SSH17N60A O-220-F-4L 0G3b333

    Untitled

    Abstract: No abstract text available
    Text: SSF25N40A Advanced Power MOSFET FEATURES BV0SS = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ H RoS on = 0 -2 ß Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10nA(Max.) @ VDS= 400V


    OCR Scan     		PDF SSF25N40A 0-162iJ 0G3b333 QG3b33M G03b335

    Untitled

    Abstract: No abstract text available
    Text: IRFP450A A dvanced Power MOSEET FEATURES B V dss = 5 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 14 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage ■


    OCR Scan     		PDF IRFP450A G03b332 0G3b333

    Untitled

    Abstract: No abstract text available
    Text: IRFS340A A dvanced Power MOSEET FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V ■ Lower RDS(ON) : 0.437 £1 (Typ.)


    OCR Scan     		PDF IRFS340A 0G3b333 QG3b33M G03b335

    74142

    Abstract: SSF10N80A 115U ssv 620 00401ST
    Text: SSF10N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 800 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 |iA Max. @ V ^ = 800V


    OCR Scan     		PDF SSF10N80A 00401ST 003b333 003b33M D03b335 74142 SSF10N80A 115U ssv 620

    74142

    Abstract: SSF5N90A
    Text: SSF5N90A Advanced Power MOSFET FEATURES BVDss - 900 V • Avalanche Rugged Technology ^DS on = 2.9 £2 Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V


    OCR Scan     		PDF SSF5N90A 003b333 003b33M D03b335 74142 SSF5N90A

    IRF 850 mosfet

    Abstract: IRF 850 250M SSF70N10A
    Text: Advanced Power MOSFET SSF70N10A FEATURES • ■ ■ ■ ■ ■ BVdss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature RDS on — 0.023 Í2


    OCR Scan     		PDF SSF70N10A 175oC 04G237 003b333 003b33M D03b335 IRF 850 mosfet IRF 850 250M SSF70N10A

    A2757

    Abstract: pj 66 diode SSH70N10A 1633 MOSFET
    Text: A d van ced Power MOSFET S S H 7 0 N 1 0 A FEATURES = 100 V b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = 70 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature


    OCR Scan     		PDF SSH70N10A 0QMD315 O-220-F-4L DD3b33E 003b333 A2757 pj 66 diode SSH70N10A 1633 MOSFET

    SSF6N80A

    Abstract: No abstract text available
    Text: SSF6N80A Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology Ros on = 2 .0 Q ■ Lower Input Capacitance lD = 4.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 piA (Max.) @ VDS = 800V


    OCR Scan     		PDF SSF6N80A GD4D22S 003b333 003b33M D03b335 SSF6N80A

    SSF6N90A

    Abstract: No abstract text available
    Text: SSF6N90A Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS= 900V


    OCR Scan     		PDF SSF6N90A G0MG231 003b333 003b33M D03b335 SSF6N90A

    SGH40N60UFD

    Abstract: igbt for induction heating
    Text: SGH40N60UFD IGBT CO-PAK FEATURES TO-3P ^ * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=20A) * High Input Impedance * CO-PAK, IGBT with FRD :Trr = 42nS (Typ) \\ 1 APPLICATIONS AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls


    OCR Scan     		PDF SGH40N60UFD O-220-F-4L DD3b33E 003b333 SGH40N60UFD igbt for induction heating

    SSF5N80A

    Abstract: PU 4145 pj 89 diode
    Text: SSF5N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jiA Max. @ VDS = 800V


    OCR Scan     		PDF SSF5N80A GG40207 B2739 003b333 003b33M D03b335 SSF5N80A PU 4145 pj 89 diode