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Catalog Datasheet	MFG & Type	Document Tags	PDF
LMBT3946DW1T1G Abstract: 1N916 LMBT3946DW1T1 Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	LMBT3946DW1T1 23/SOT LMBT3946DW1T1G 195mm 150mm 3000PCS/Reel 8000PCS/Reel OT-723 OD-723) LMBT3946DW1T1G 1N916	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	LMBT3946DW1T1 23/SOTâ LMBT3946DW1T1G S-LMBT3946DW1T1G OT-363/SC-88 SC-88/SOT-363	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	LMBT3946DW1T1 23/SOTâ LMBT3946DW1T1G SC-88/SOT-363	PDF
7p1 marking Abstract: ZXMP10A13F ZXMP10A13FTA ZXMP10A13FTC 10000Units Text: ZXMP10A13F 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = - 100V : RDS(on)= 1 ; ID = - 0.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes	Original	ZXMP10A13F ZXMP10A13FTA ZXMP10A13FTC 7p1 marking ZXMP10A13F ZXMP10A13FTA ZXMP10A13FTC 10000Units	PDF
7p1 marking Abstract: ZXMP10A13FTA Text: ZXMP10A13F 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = - 100V : RDS(on)= 1 ; ID = - 0.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes	Original	ZXMP10A13F ZXMP10A13FTA ZXMP10A13FTC 10000units 522-ZXMP10A13FTA ZXMP10A13FTA 7p1 marking	PDF
Untitled Abstract: No abstract text available Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	LMBT3946DW1T1 23/SOTâ LMBT3946DW1T1G	PDF
LMBT3946DW1T1G Abstract: 1N916 LMBT3946DW1T1 cs_ sot-363 Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors The LMBT3946DW1T1 device is a spin–off of our popular SOT–23/SOT–323 three–leaded device. It is designed for general purpose amplifier applications and is housed in the SOT–363 six–leaded surface mount package. By putting two discrete devices in	Original	LMBT3946DW1T1 23/SOT LMBT3946DW1T1G Emitte10/14 SC-88/SOT-363 LMBT3946DW1T1G 1N916 cs_ sot-363	PDF
Untitled Abstract: No abstract text available Text: ZXM P10A13F 100V P-CHANNEL ENHANCEM ENT M ODE M OSFET SUM M ARY V BR DSS = - 100V : RDS(on)= 1 ; ID = - 0.7A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes	Original	P10A13F 13FTA	PDF