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    Kyocera AVX Components 100B101JW500XT1K

    CAP CER 100PF 500V P90 1111
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    DigiKey 100B101JW500XT1K Digi-Reel 6,153 1
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    100B101JW500XT1K Cut Tape 6,153 1
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    100B101JW500XT1K Reel 6,000 500
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    Mouser Electronics 100B101JW500XT1K 499
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    Kyocera AVX Components 100B101JT500XT1K

    CAP CER 100PF 500V P90 1111
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    DigiKey 100B101JT500XT1K Reel 6,000 1,000
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    Mouser Electronics 100B101JT500XT1K 2,127
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    Kyocera AVX Components 100B101FW500XT1K

    CAP CER 100PF 500V P90 1111
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    DigiKey 100B101FW500XT1K Digi-Reel 5,561 1
    • 1 $14.17
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    100B101FW500XT1K Cut Tape 5,561 1
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    100B101FW500XT1K Reel 1,000 1,000
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    Avnet Americas 100B101FW500XT1K Tape w/Leader 16 Weeks 1,000
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    Richardson RFPD 100B101FW500XT1K 1,000
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    Kyocera AVX Components 100B101JTN500XT1K

    CAP CER 100PF 500V P90 1111
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    DigiKey 100B101JTN500XT1K Reel 4,000 1,000
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    Kyocera AVX Components 100B101GT500XT1K

    CAP CER 100PF 500V P90 1111
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    DigiKey 100B101GT500XT1K Cut Tape 2,745 1
    • 1 $10.32
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    100B101GT500XT1K Digi-Reel 2,745 1
    • 1 $10.32
    • 10 $7.246
    • 100 $5.6088
    • 1000 $4.9422
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    100B101GT500XT1K Reel 1,000 1,000
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    Avnet Americas 100B101GT500XT1K Tape w/Leader 16 Weeks 1,000
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    Richardson RFPD 100B101GT500XT1K 1,000
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    100B101 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    100B-1011F Pulse Electronics Military & Aerospace Transformers - Pulse Transformers - XFMR CHOKE QUAD 100BT SMT PBC Original PDF
    100B-1018 iNRCORE EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018 iNRCORE EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018 Pulse Electronics EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018T iNRCORE EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018T iNRCORE EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018T Pulse Electronics EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018X iNRCORE EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018X Pulse Electronics EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018XT iNRCORE EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B-1018XT Pulse Electronics EXTMP XFMR 100BT SMG COM PBC Original PDF
    100B101FT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 500V P90 1111 Original PDF
    100B101FT500XT1K American Technical Ceramics Ceramic Capacitor 100PF 500V P90 1111 Original PDF
    100B101FW500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 500V P90 1111 Original PDF
    100B101FW500XT1K American Technical Ceramics Ceramic Capacitor 100PF 500V P90 1111 Original PDF
    100B101GT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 500V P90 1111 Original PDF
    100B101GT500XT1K American Technical Ceramics Ceramic Capacitor 100PF 500V P90 1111 Original PDF
    100B101JP500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 500V P90 1111 Original PDF
    100B101JT500XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 500V P90 1111 Original PDF
    100B101JT500XT1K American Technical Ceramics Ceramic Capacitor 100PF 500V P90 1111 Original PDF

    100B101 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


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    MRF6P9220H MRF6P9220HR3 PDF

    100B101JW

    Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


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    MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3 PDF

    tantulum capacitor

    Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


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    MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 tantulum capacitor 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955 PDF

    J294

    Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to


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    MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


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    MRFG35005N MRFG35005NT1 MRFG35005ANT1. MRFG35005NT1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


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    MRFG35005MT1 MRFG35005NT1. PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


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    MRFG35010MT1 MRFG35010NT1 MRFG35010MT1 PDF

    transistor GT 1081

    Abstract: MRFG35010AR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


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    MRFG35010A MRFG35010AR1 MRFG35010AR5 MRFG35010A transistor GT 1081 MRFG35010AR5 PDF

    100B201JT500XT

    Abstract: CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282-2 Rev. 17, 10/2008 RF Power Field Effect Transistor MRF282ZR1 Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


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    MRF282--2 MRF282ZR1 458C-03, NI-200Z MRF282--2 100B201JT500XT CRCW12063900FKEA 365 pF variable capacitor 100B120JT500XT GX0300-55-22 MRF282 PDF

    J209

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21170H Rev. 0, 5/2006 RF Power Field Effect Transistors MRF7S21170HR3 MRF7S21170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to


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    MRF7S21170H MRF7S21170HR3 MRF7S21170HSR3 MRF7S21170H J209 PDF

    13009 TRANSISTOR equivalent

    Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to


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    MRFG35030R5/D MRFG35030R5 13009 TRANSISTOR equivalent D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent PDF

    ferroxcube for ferrite beads

    Abstract: MRF282
    Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 14, 5/2005 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


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    MRF282 MRF282SR1 MRF282ZR1 MRF282 ferroxcube for ferrite beads PDF

    marking 0619

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


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    MRFG35005MT1 MRFG35005MT1 marking 0619 PDF

    m28748

    Abstract: 107R1001 m28748 winchester MRAC 107-0903-2A M39029/34-440 Winchester Electronics 100-51020S m39029/35-275 Crimp spec for mil-c-39029 socket 100-1020P
    Text: Removable Contacts Watertown, Connecticut 06795-0500 • Copper Alloy, gold plated. Closed entry type machined from copper alloy, gold plated. Complete line available. Includes automatic pneumatic, pneumatic hand operated, hand operated crimping tools, insertion and


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    100-8001P 100-8000S 100-8000P RG178/U RG196/U RG161/U RG179/U RG187/U 100-8001S 100-8003P m28748 107R1001 m28748 winchester MRAC 107-0903-2A M39029/34-440 Winchester Electronics 100-51020S m39029/35-275 Crimp spec for mil-c-39029 socket 100-1020P PDF

    RF FET TRANSISTOR 3 GHZ

    Abstract: A113 MRFG35003NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


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    MRFG35003N MRFG35003NT1 RF FET TRANSISTOR 3 GHZ A113 MRFG35003NT1 PDF

    6 017 03 61

    Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


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    MRFG35010MT1 MRFG35010NT1. 6 017 03 61 A113 MRFG35010MT1 MRFG35010NT1 D55342M07 PDF

    Marking Z7 Gate Driver

    Abstract: MRFG35005MT1 A113 MRFG35005NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


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    MRFG35005MT1 MRFG35005NT1. Marking Z7 Gate Driver MRFG35005MT1 A113 MRFG35005NT1 PDF

    GX03005522

    Abstract: 200S CDR33BX104AKWS MRF282SR1 MRF282ZR1 GX0300-55-22 MRF282
    Text: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282SR1 MRF282ZR1 RF Power Field Effect Transistors Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFETs


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    MRF282/D MRF282SR1 MRF282ZR1 MRF282SR1 GX03005522 200S CDR33BX104AKWS MRF282ZR1 GX0300-55-22 MRF282 PDF

    A113

    Abstract: MRFG35005MT1 MRFG35005NT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


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    MRFG35005MT1 MRFG35005NT1 MRFG35005NT1 A113 MRFG35005MT1 PDF

    ATC 1184

    Abstract: A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814
    Text: MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


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    MRFG35005MT1/D MRFG35005MT1 ATC 1184 A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814 PDF

    Untitled

    Abstract: No abstract text available
    Text: FEATURES PACKAGE High Power Gain Excellent Ruggedness 50V Supply Voltage Operation from 24v- 50v high Power Gain Extremely Rugged Internal Input and Output Matching Pb-free and RoHS Compliant TYPICAL PERFORMANCE DESCRIPTION ORDERING INFORMATION REV. B THERMAL/RUGGEDNESS PERFORMANCE


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    PDF

    ferroxcube ferrite beads

    Abstract: C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414
    Text: Freescale Semiconductor Technical Data Document Number: MRF282 Rev. 15, 5/2006 RF Power Field Effect Transistors MRF282SR1 MRF282ZR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for Class A and Class AB PCN and PCS base station applications with frequencies up to 2600 MHz. Suitable for FM, TDMA, CDMA, and


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    MRF282 MRF282SR1 MRF282ZR1 MRF282SR1 ferroxcube ferrite beads C18 ph MJD320 ferroxcube for ferrite beads Semiconductor 1346 transistor MALLORY VARIABLE CAPACITORS MRF282 100b*500x MRF282ZR1 RESISTOR AXIAL 0414 PDF

    transistor MARKING NC KRC

    Abstract: MARKING CODE c26 AGR09130E AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP
    Text: t Copy Only AGR09130E 130 W, 921 MHz—960 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09130E is a high-voltage, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular band, code division multiple


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    AGR09130E Hz--960 AGR09130E AGR09130EU AGR09130EF transistor MARKING NC KRC MARKING CODE c26 AGR09130EF AGR09130EU JESD22-C101A amplifier copy machine 100B1R5BW MOSFET marking Z4 marking code ACP PDF

    transistor B42

    Abstract: No abstract text available
    Text: ^ -3 3 - 0 1 Philips Sem iconductors NPN silicon planar epitaxial „ m ic rowave power transistor PHILIPS INTERNATIONAL FEATURES Suitable for short and medium pulse applications up to 1 ms/10% Internal Input prematching networks allow an easier design of circuits


    OCR Scan
    RZB06050W 711DfiEti 711Dfl2b transistor B42 PDF