Untitled
Abstract: No abstract text available
Text: A p p l ic a t io n N otes A V A I L A B L E AN62 • AN64 • AN66 • AN74 « X68C75 SLIC E2 Microperipheral Port Expander and E2 Memory FEATURES • High Performance CMOS — Fast Access Time, 120ns — Low Power • 60mA Active • 100fiA Standby • PDIP, PLCC, and TQFP Packaging Available
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X68C75
120ns
100fiA
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at28c64a
Abstract: No abstract text available
Text: I////CRTRLY5 T mm II I S E M l C a N D U C T O R CAT28C64A/CAT28C64AI 64K-Bit CMOS E2PROM FEATURES • Fast R ead A ccess T im es: 150/200/250ns ■ C M O S and T T L C o m p atib le I/O ■ Low P o w e r C M O S Dissipation: -A c tiv e : 30m A M ax. -S ta n d b y : 100fiA Max.
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CAT28C64A/CAT28C64AI
64K-Bit
150/200/250ns
100fiA
AT28C
at28c64a
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TS555
Abstract: ne555 mos
Text: r z j SGS-THOMSON TS555C/I/M LOW POWER SINGLE CMOS TIMERS • VERY LOW POWER CONSUMPTION : ■ 100fiA typ at Vcc = 5V ■ HIGH MAXIMUM ASTABLE FREQUENCY 2.7MHz ■ PIN-TO-PIN AND FUNCTIONALLY COMPATIBLE WITH BIPOLAR NE555 ■ VOLTAGE RANGE : +2V to +18V ■ HIGH OUTPUT CURRENT CAPABILITY
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TS555C/I/M
100fiA
NE555
TS555C
TS555I
TS555M
TS555-01
TS555CD
TS555IN
TS555
ne555 mos
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C5646
Abstract: No abstract text available
Text: UNCONTROLLED DOCUMENT PART NUMBER REV. LDS —C 5 6 4 6 R I/N P R lf=10mA ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 T PARAMETER MIN TYP PEAK WAVELENGTH MAX 660 RED FORWARD VOLTAGE 2.3 Vf Vr lr =100fiA 17,500 |jcd I f = 10mA 5.D AXIAL INTENSITY fiOOD EMITTED COLOR:
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LDS-C5646RI/NPR
100fjA
C5646
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a7532
Abstract: No abstract text available
Text: ¿ = 7 *7 Æ > S G S -1 H 0 M S 0 N M W iU Iê M M X Ê i M 27V 10 1 LOW VOLTAGE 1 Megabit 128K x 8 UV EPROM and OTP EPROM LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 90ns LOW POWER ’’CMOS” CONSUMPTION: - Active Current 30mA - Standby Current 100fiA
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100fiA
12sec.
M27V101
M27C1001
a7532
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2SA539
Abstract: AD100
Text: Transistors 2SA539 USHA INDIA LTD ELECTRICAL CHARACTERISTICS (Ta=25°C) Characteristic Sym bol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage B V cbo lc = -100fiA, Ie = 0 -6 0 V Collector-Emitter Breakdown Voltage B V ceo lc = -10mA, |B=0
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2SA539
400mW
2SA539
AD100
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NCC equivalent
Abstract: No abstract text available
Text: TMS29F400T, TMS29F400B 524288 BY 8-BIT/262144 BY 16-BIT FLASH M EMORIES • I • Single Power Supply Supports 5 V ± 10% Read/Write Operation I I • Organization . . . I • Array-Blocking Architecture - One 16K-Byte/One 8K-Word Boot Sector - Two 8K-Byte/4K-Word Parameter Sectors
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TMS29F400T,
TMS29F400B
8-BIT/262144
16-BIT
SMJS843A
44-Pin
48-Pin
8-Blf/262144
NCC equivalent
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optocoupler a 3131
Abstract: DN-89 DN27 DN-42A DN65 U-136A U-133A dn-36 half bridge converter 80V output 15A U-140
Text: PWM Control Current Mode Controllers . 3-1 Dedicated DC/DC
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200mA
DN-38
PS/3-460
PS/3-460
optocoupler a 3131
DN-89
DN27
DN-42A
DN65
U-136A
U-133A
dn-36
half bridge converter 80V output 15A
U-140
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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2SA1420
Abstract: SC36 small signal transistor
Text: Ordering number: EN 1682A 2SA1420/2SC3653 PNP/ NPN Epitaxial P lanar Silicon Transistors SAßtYO i Switching Applications _ with Bias Resistor Use .Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1=47kfl ,R2=47kO ).
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l682A
2SA1420/2SC3653
2SA1420
2034/2034A
SC-43
7tlt17D7b
SC36
small signal transistor
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35606
Abstract: NR041
Text: sa NATL S E M I C O N D { D I S C R E T E } 650 1130 2T 0 . NATL SEMICOND, bsoiiao D0 3 Sb0 h dëT| DISCRETE 28C 35605 r- National Semiconductor D * o fiC NR041(NPN) low-level signal switching transistor features | 1 | package and lead coding • 40mV guaranteed V c e (sat) characteristics at
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LS01130
D03Sb0h
NR041
NR041X
bSG113Q
35606
NR041
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intel 2102 Static RAM
Abstract: intel 2102a tRE31 2102A-4 2102A memory 2102A-2 2102AL 2102AL-2 2102AL-4 251C
Text: intei 2102A, 2102AL/8102A-4* 1K x 1 BIT STATIC RAM P/N 2102AL-4 2102AL 2102AL-2 2102A-2 Operating Pwr. mW 174 174 342 342 289 289 Standby Pwr. (mW) 35 35 42 2102A-4 Access (ns) 450 350 250 250 350 450 • Inputs Protected: All Inputs Have Protection Against Static
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2102AL/8102A-4*
2102AL-4
2102AL
2102AL-2
102A-2
102A-4
1024word
intel 2102 Static RAM
intel 2102a
tRE31
2102A-4
2102A memory
2102A-2
251C
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ic 74 LS 138 DECODER
Abstract: No abstract text available
Text: TOSHIBA TC74LCX138F/FN/FS Low-Vottage Quad 3-TO-8 LINE DECODER with 5V Tolerant Inputs and Outputs The TC74LCX138 is a high performance C M O S 3-to-8 DECODER. Designed for use in 3.3 Volt systems, it achieves high speed operation while maintaning the C M O S low power
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TC74LCX138F/FN/FS
TC74LCX138
ic 74 LS 138 DECODER
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Microchip vk 1103
Abstract: No abstract text available
Text: fiW l e « « . 27LV128 M Ie r o o h Ip 128K 16K X 8 Low Voltage CMOS EPROM FEATURES DESCRIPTION • Wide voltage rang« 3.0V to 5.5V • High speed performance — 200ns Maximum access time at 3.0V • CMOS Technology for low power consumption — 8mA active current at 3.0V
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27LV128
200ns
100fiA
28-pin
32-pin
DS11025A-8
Microchip vk 1103
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Untitled
Abstract: No abstract text available
Text: DISPLAY PRODUCTS data blE D • Hb*44S2G D D Q O S T S Ebl M D I J P T - m LEDs w SM JM Jß D ata D isplay Products Medium profile, Non-Diffused • Red, Amber, Green • Non-Diffused Tinted Encapsulation • Luminous Intensities from 34 to 38 mcd E lectro -O p tica l C h a ra c te ristic s
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44S2G
100fiA)
190-LCR
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Untitled
Abstract: No abstract text available
Text: AN AL OG « F VI CF X INC 51E D A N A LO G D E V IC E S Dual PNP Transistor T-H3-2£r MAT-03 FEATURES Dual Matched PNP Transistor Low Offset Voltage. . Low Noise. 1nV/VHz @ 1kHz Max High G ain . .
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MAT-03
DAC-08,
992mA
992rnA,
008mA
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ZLD0330
Abstract: ZLD0 GE Energy 3.3V Regulator
Text: 3.3 VOLT ULTRA LOW DROPOUT REGULATOR ZLD0330 IS S U E 2 - M A Y 1997 DEVICE DESCRIPTION T h e Z L D O S e r ie s lo w d r o p o u t lin e a r regulators operate with an exceptionally low dropout voltage, typically only 30m V with a load current of 100mA. The regulator
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100mA.
560jiA
300mA.
ZLD0330
ZLD0330
ZLD0
GE Energy 3.3V Regulator
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Untitled
Abstract: No abstract text available
Text: data display blE products J> • 2b44520 OOOObOD MST « » D P T -l% LEDs Welter Clear D ata D isplay Products • Red, Amber, Amber/Yellow, Yellow, Green, Blue • Water Clear Encapsulation • Luminous Intensities from 10 to 500 mcd Electro-O ptical C haracteristics @ TA = 25°C
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2b44520
200-EW
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Untitled
Abstract: No abstract text available
Text: \ iw t _ s s t TECHNOLOGY Multiple Modulation Standard Infrared Receiver F€RTUR€S DCSCRIPTIOfl • ■ ■ ■ The L T 1 3 1 9 is a general purpose building block that Receives Multiple IR Modulation Methods Low Noise, High Speed Pream p: 2 p A /V fiz, 7 M H z
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00V/V
2N39Q4
41LT1
TSH5400
DN304
LT1319
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Untitled
Abstract: No abstract text available
Text: urm TECHNOLOGY LT1034-1.2/LT1034-2.5 Micropower Dual Reference FCflTUftCS DCSCAIPTIOn • Guaranteed 20 ppm/°C Drift The LT1034 is a micropower, precision 1.2V/2.5V reference ■ 1.2 V 1 % Initial Tolerance ■ 20/iA to 20m A Operation combined with a 7 V auxiliary reference. The 1.2V/2.5V
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LT1034-1
2/LT1034-2
LT1034
20/iA
20ppm/Â
100/tA
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GES5307
Abstract: 2N3901 2n3901 equivalent 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N5232A
Text: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE b v CEO Type 2N 3391A NPN 25 2 N 3844 NPN 30 2N 3844A NPN 30 35-70 2N 3845 NPN 30 60 -1 2 0 2N 3845A NPN 30 60-120 2N 3900A NPN 18 2 5 0-&00 2N3901 NPN 18 2N 5232A NPN 2N 5249A 2N 5306A V NF hFE Device Min.-Max. @ l c > ^ C E <V)
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2N3391A
2N3844
2N3844A
2N3845
2N3845A
2N3900A
25G-b00
100MA,
2N3901
GES5305,
GES5307
2n3901 equivalent
2N5232A
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A9 npn
Abstract: GES93 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. M ax. @ l c (m A) 10 10 10 10 2 •BaBB B B i» « ¡■ M l ■ M M ■ ■ ■ I 300 350 250 300 300 25 ?.5 2.5 2.5 2.5 200
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2N3903
2N3904
2N3905
2N3906
2N4123
2N4124
2N4125
2N4126
2N4400
A9 npn
GES93
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water level control
Abstract: CA3098E ca3098 programmable schmitt trigger WATER LEVEL CONTROL circuit
Text: HARRIS S E M I C O N D U C T O R T o r N EW P fc S 'G N S CA3098 '» in T R E C O M M f^ P P r o g r a m m a b l e S c h m i t t Tr ig g e r with M e m o r y , Dua l In p u t P r e c is io n Le vel D e t e c t o r November 1996 F ea tu res Description • P ro g ra m m a b le O peratin g C u rren t
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CA3098
CA3098
150mA
1-800-4-H
water level control
CA3098E
programmable schmitt trigger
WATER LEVEL CONTROL circuit
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2N5309
Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN
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2N4256
2N4424
2N4425
130-b40
2IM5172
2N5174
2N5232
2N5232A
2N5249A
012ySC
2N5309
2N5305
2N5306
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