2SA1837
Abstract: 2SC4793 2SA1837 Toshiba
Text: TOSHIBA Discrete Semiconductors 2SC4793 Transistor Unit in mm Silicon NPN Epitaxial Planar Type Power Amplifier, Driver Stage Applications Features • High Transistion: fT = 100MHz • Complementary to 2SA1837 Absolute Maximum Ratings Ta = 25°C CHARACTERISTIC
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2SC4793
100MHz
2SA1837
2SA1837
2SC4793
2SA1837 Toshiba
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2SC4433
Abstract: ITR06901 ITR06902 ITR06903 ITR06904 ITR06905 ITR06906
Text: Ordering number:ENN3553 NPN Epitaxial Planar Silicon Transistor 2SC4433 HF Amplifier Applications Features Package Dimensions • High power gain : PG=28dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ. · Small Cob, Cre. unit:mm 2033A [2SC4433]
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ENN3553
2SC4433
100MHz)
750MHz
2SC4433]
2SC4433
ITR06901
ITR06902
ITR06903
ITR06904
ITR06905
ITR06906
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PDF
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CZD1225
Abstract: CZD2983
Text: CZD2983 NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente DESCRIPTION The CZD2983 is designed for power amplifier and driver stage amplifier applications. D-Pack TO-252 FEATURES High transition frequency：fT = 100MHz (Typ.) Complements to CZD1225
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CZD2983
CZD2983
O-252)
100MHz
CZD1225
100mA
03-Sep-2010
CZD1225
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3553 NPN Epitaxial Planar Silicon Transistor 2SC4433 HF Amplifier Applications Features Package Dimensions • High power gain : PG=28dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ. · Small Cob, Cre. unit:mm 2033A [2SC4433]
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ENN3553
2SC4433
100MHz)
750MHz
2SC4433]
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EN3553
Abstract: 2SC4432 2SC4433 D2598
Text: Ordering number:EN3553 NPN Epitaxial Planar Silicon Transistor 2SC4433 HF Amplifier Applications Features Package Dimensions • High power gain : PG=28dB typ f=100MHz . · High cutoff frequency : fT=750MHz typ. · Small Cob, Cre. unit:mm 2033A [2SC4433] 2.2
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EN3553
2SC4433
100MHz)
750MHz
2SC4433]
EN3553
2SC4432
2SC4433
D2598
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PDF
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KTC4793
Abstract: KTA1837
Text: SEMICONDUCTOR KTC4793 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATINS. A P S High Transition Frequency : fT=100MHz Typ. B E K G Complementary Pair with KTA1837. L ) R M J MAXIMUM RATING (Ta=25
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KTC4793
100MHz
KTA1837.
O-220IS
100ms
KTC4793
KTA1837
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KSC2310
Abstract: No abstract text available
Text: KSC2310 KSC2310 High Voltage Power Amplifier • Collector-Base Voltage : VCBO=200V • Current Gain Bandwidth Product : fT=100MHz TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2310
100MHz
O-92L
KSC2310
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KSC2310
Abstract: No abstract text available
Text: KSC2310 KSC2310 High Voltage Power Amplifier • Collector-Base Voltage : VCBO=200V • Current Gain Bandwidth Product : fT=100MHz TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2310
100MHz
O-92L
KSC2310
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC2310 KSC2310 High Voltage Power Amplifier • Collector-Base Voltage : VCBO=200V • Current Gain Bandwidth Product : fT=100MHz TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted
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KSC2310
100MHz
O-92L
KSC2310RBU
KSC2310
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PDF
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC4793 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATINS. A P S High Transition Frequency : fT=100MHz Typ. B E K G Complementary Pair with KTA1837. L ) R M J MAXIMUM RATING (Ta=25
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KTC4793
100MHz
KTA1837.
O-220IS
100ms
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PDF
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2SC4399
Abstract: ITR06678 ITR06679 ITR06680 ITR06681 ITR06682
Text: Ordering number:ENN3020 NPN Epitaxial Planar Silicon Transistor 2SC4399 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB typ f=100MHz . · Ultrasmall-sized package permitting the 2SC4399applied sets to be made small and slim.
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ENN3020
2SC4399
100MHz)
2SC4399applied
2059B
2SC4399]
2SC4399
ITR06678
ITR06679
ITR06680
ITR06681
ITR06682
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PDF
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Ksc1674
Abstract: No abstract text available
Text: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT=600MHz Typ • High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic
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KSC1674
600MHz
100MHz
Ksc1674
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rf fairchild transistor 100mhz amplifier
Abstract: KSC2786 rf fairchild transistor 100mhz
Text: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92S • High Current-Gain-Bandwidth Product fT=600MHz Typ • High Power Gain GPE=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic
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KSC2786
O-92S
600MHz
100MHz
rf fairchild transistor 100mhz amplifier
KSC2786
rf fairchild transistor 100mhz
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PDF
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KTC4793
Abstract: KTA1837
Text: SEMICONDUCTOR KTC4793 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATINS. A C DIM A B C D E F P F U FEATURES E B ᴌHigh Transition Frequency : fT=100MHz Typ. S G ᴌComplementary Pair with KTA1837.
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KTC4793
100MHz
KTA1837.
100ms
KTC4793
KTA1837
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KSC2310
Abstract: No abstract text available
Text: KSC2310 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER • Collector - Base Voltage VCBO=200V • Current Gain-Bandwidth Product fT=100MHz TO-92L ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage
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Original
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KSC2310
100MHz
O-92L
KSC2310
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC2983 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2983 DRIVER STAGE AMPLIFIER APPLICATIONS. • • High Transition Frequency : fT=100MHz (Typ.) Complementary to 2SA1225 MAXIMUM RATINGS (Ta = 25°C)
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OCR Scan
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2SC2983
100MHz
2SA1225
61001EA
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PDF
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a50l
Abstract: No abstract text available
Text: TOSHIBA TRANSISTOR SEMICONDUCTOR T O SH IB A TECHNICAL 2SC2983 DATA SILICON NPN EPITAXIAL TYPE PCT PROCESS (2SC2983) Unit in mm POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. • • High Transition Frequency : fr = 100MHz (Typ.) Complementary to 2SA1225
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OCR Scan
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2SC2983
2SC2983)
100MHz
2SA1225
2SC2983
a50l
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PDF
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S9018
Abstract: S9018 TO92
Text: FORWARD INTERNATIONAL ELECTRONICS LID . S9018 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM /FM IF AMPLIFIER^LOCAL OSCILLATOR Package: TO-92 OF FM/VHF TUNER * High Current Gain Bandwidth Product fT=l 100MHz * High Total Power Dissipation: Pc=400mW
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OCR Scan
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S9018
100MHz
400mW
BVcboTO-92
100uA
S9018
S9018 TO92
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC2310 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER AMPLIFIER • Collector - Base Voltage V c b o =200V • Current Gain-Bandwidth Product fT=100MHz Typ ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage
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OCR Scan
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KSC2310
100MHz
7cjt4i42
00247h3
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PDF
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transistor revers characteristic
Abstract: NF005 KSC1674 QDS4744 TRANSISTOR 100MHz
Text: NPN EPITAXIAL SILICON TRANSISTOR KSC1674 TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gpa=22dB at f=100MHz s ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol
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OCR Scan
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KSC1674
600MHz
100MHz
D0S474t,
E22KO
transistor revers characteristic
NF005
KSC1674
QDS4744
TRANSISTOR 100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: S9018 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AM /FM IF AMPLIFIER^LOCAL OSCILLATOR Package: TO-92 OF FM/VHF TUNER * High Current Gain Bandwidth Product fT =l 100MHz * High Total Power D issipation: Pc=400mW
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OCR Scan
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S9018
100MHz
400mW
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PDF
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transistor c 4793
Abstract: transistor 4793 TOSHIBA C 4793 hfe 4793 2sc 4793
Text: TOSHIBA 2SC4793 Transistor Silicon NPN Epitaxial Planar Type Power Amplifier, Driver Stage Applications Features • High Transistion: fT = 100MHz • Com plem entary to 2SA1837 A bsolute M axim um Ratings Ta = 25°C SYMBOL RATING UNIT C ollector-B ase Voltage
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OCR Scan
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2SC4793
100MHz
2SA1837
transistor c 4793
transistor 4793
TOSHIBA C 4793
hfe 4793
2sc 4793
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC1674 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR TO-92 • High Current-Gain Bandwidth Product fT>600MHz Typ • High Power Gain Gpe=22dB at f= 100MHz ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C haracteristic
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OCR Scan
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KSC1674
600MHz
100MHz
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: KSC2786 NPN EPITAXIAL SILICON TRANSISTOR TV PIF AMPLIFIER, FM TUNER RF AMPLIFIER, MIXER, OSCILLATOR • High Current-Gain-Bandwidth Product fT=600MHz iyp • High Power Gain Gp«=22dB at f=100MHz ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage
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OCR Scan
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KSC2786
600MHz
100MHz
100MHz
0D24fll5
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PDF
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