SOP 8 200MIL
Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
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D-85622
REJ01C0001-0100Z
SOP 8 200MIL
serial flash 256Mb fast erase spi
TM 1628 IC SOP
Micron 512MB NOR FLASH
HN29V1G91T-30
HN58C1001FPI-15
M5M51008DFP-70HI
256mb EEPROM Memory
CSP-48
TSOP 28 SPI memory Package flash
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Untitled
Abstract: No abstract text available
Text: [s e m ic o n d u c t o r AP9B132 ADVANCED INFORMATION 32K x 32,3.3 V Pipelined Synchronous Burst Mode SRAM • • • • Features • • • • • • • • • • • • Fast access times: 4 .5 ,5 ,6, 7, and 8 ns Fast OE access times: 5 and 6 ns
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AP9B132
l/02g
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY C Y 7C 374i UltraLogic 128-Macrocell Flash CPLD Features • • • • 128 macrocells in eight logic blocks 64 I/O pins 5 dedicated inputs including 4 clock pins In-System Reprogrammable ISR™ Flash technology — JTAG interface • Bus Hold capabilities on all l/Os and dedicated inputs
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128-Macrocell
84-pin
100-pin
CY7C373i
CY7C374i
FLASH370iâ
173SR
CY7C374i
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71V2578
Abstract: No abstract text available
Text: 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V2576S IDT71V2578S IDT71V2576SA IDT71V2578SA Description 128K x 36, 256K x 18 memory configurations
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IDT71V2576S
IDT71V2578S
IDT71V2576SA
IDT71V2578SA
150MHz
133MHz
100-pin
x4033
71V2578
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INTEGRATED DEVICE TECHNOLOGY 71V432
Abstract: No abstract text available
Text: 32K x 32 CacheRAM 3.3V Synchronous SRAM Burst Counter Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V432 processor interfaces. The pipelined burst architecture provides costeffective 3-1-1-1 secondary cache performance for processors up to
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IDT71V432
IDT71V432
c/09/00
100pinTQFP
x4033
INTEGRATED DEVICE TECHNOLOGY 71V432
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PLSI 1016-60LJ
Abstract: PAL 007 pioneer pal16r8 programming algorithm PAL 008 pioneer lattice 1016-60LJ ISP Engineering Kit - Model 100 PLSI-2064-80LJ GAL16v8 programmer schematic GAL programming Guide ispLSI 2064-80LT
Text: Lattice Semiconductor Data Book 1996 Click on one of the following choices: • Table of Contents • Data Book Updates & New Products • Go to Main Menu 1996 Lattice Semiconductor Corporation. All rights reserved. ispLSI and pLSI Product Index Pins Density
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1016E
1032E
20ters
48-Pin
304-Pin
PLSI 1016-60LJ
PAL 007 pioneer
pal16r8 programming algorithm
PAL 008 pioneer
lattice 1016-60LJ
ISP Engineering Kit - Model 100
PLSI-2064-80LJ
GAL16v8 programmer schematic
GAL programming Guide
ispLSI 2064-80LT
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IDT71V632
Abstract: sram with address counter
Text: 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ with full support of the Pentium and PowerPC™ processor interfaces. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz.
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117MHz.
IDT71V632
117MHz
100pinTQFP
x4033
sram with address counter
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IDT71V633
Abstract: No abstract text available
Text: 64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect IDT71V633 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ 64K x 32 memory configuration Supports high performance system speed Commercial: — 11 11ns Clock-to-Data Access 50 MHz
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IDT71V633
MT58LC64K32B2LG-XX)
100-pin
100pinTQFP
x4033
IDT71V633
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IDT71V433
Abstract: pin diagram for core i3 processor
Text: 32K x 32 3.3V Synchronous SRAM Flow-Through Outputs IDT71V433 Features ◆ ◆ ◆ ◆ ◆ ◆ 32K x 32 memory configuration Supports high performance system speed: Commercial and Industrial: — 11 11ns Clock-to-Data Access 50MHz — 12 12ns Clock-to-Data Access (50MHz)
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IDT71V433
50MHz)
100-pin
IDT71V433
100pinTQFP
x4033
pin diagram for core i3 processor
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Untitled
Abstract: No abstract text available
Text: M A X 7000A Programmable Logic Device Family January 1 9 9 8 . v er. 1 Data Sheet AX 7DG0 Features. Prelim inary Information • ■ ■ Formerly known as Michelangelo devices High-performance CMOS EEPROM-based programmable logic devices PLDs built on second-generation M ultiple Array Matrix
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EPM7128A
EPM7256A
EPM7128A
100-Pin
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M5281
Abstract: 71V3558S 71V3556S 71V3558SA
Text: 128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 3.3V I/O, Burst Counter Pipelined Outputs Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V3556S/XS IDT71V3558S/XS IDT71V3556SA/XSA IDT71V3558SA/XSA The IDT71V3556/58 are 3.3V high-speed 4,718,592-bit 4.5 Megabit synchronous SRAMS. They are designed to eliminate dead bus
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IDT71V3556S/XS
IDT71V3558S/XS
IDT71V3556SA/XSA
IDT71V3558SA/XSA
IDT71V3556/58
592-bit
M5281
71V3558S
71V3556S
71V3558SA
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71V2578
Abstract: No abstract text available
Text: 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Preliminary IDT71V2576 IDT71V2578 Description 128K x 36, 256K x 18 memory configurations Supports high system speed:
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IDT71V2576
IDT71V2578
150MHz
133MHz
100-pin
IDT71V2576/78
200MHz
IDT71V25761
IDT71V25781)
100pinTQFP
71V2578
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71V3577
Abstract: No abstract text available
Text: 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Preliminary IDT71V3577 IDT71V3579 The IDT71V3577/79 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V3577/79 SRAMs contain write, data,
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IDT71V3577
IDT71V3579
IDT71V3577/79
36/256K
119-lead
100pinTQFP
x4033
71V3577
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71V3577
Abstract: No abstract text available
Text: 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Preliminary IDT71V3577 IDT71V3579 The IDT71V3577/79 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V3577/79 SRAMs contain write, data,
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IDT71V3577
IDT71V3579
IDT71V3577/79
36/256K
119-lead
100pinTQFP
119BGA
x4033
71V3577
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Untitled
Abstract: No abstract text available
Text: 64K x 32 3.3V Synchronous SRAM Pipelined Outputs Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V632 with full support of the Pentium and PowerPC™ processor interfaces. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz.
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IDT71V632
MT58LC64K32D7LG-XX)
100-pin
117MHz
100pinTQFP
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S3F82F5
Abstract: S3C828B FM24653 ISO-14001 F8289 S3C82F5 S3F80M4
Text: S3C82F5/F82F5 8-BIT CMOS MICROCONTROLLERS USER'S MANUAL Revision 1.10 Important Notice The information in this publication has been carefully checked and is believed to be entirely accurate at the time of publication. Samsung assumes no responsibility, however, for possible errors or
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S3C82F5/F82F5
10Kbytes
95/98/2000/XP)
S3F82F5
100QFP,
100TQFP
S3F82F5
S3C828B
FM24653
ISO-14001
F8289
S3C82F5
S3F80M4
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IDT71V2576
Abstract: IDT71V2578 max3035 71V2578
Text: 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ IDT71V2576 IDT71V2578 Description 128K x 36, 256K x 18 memory configurations Supports high system speed:
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IDT71V2576
IDT71V2578
150MHz
133MHz
100-pin
IDT71V2576
165fBGA
BG119
BQ165
IDT71V2578
max3035
71V2578
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IDT71V633
Abstract: No abstract text available
Text: 64K x 32 3.3V Synchronous SRAM Flow-Through Outputs Burst Counter, Single Cycle Deselect IDT71V633 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ tecture provides cost-effective 2-1-1-1 performance for processors up to 50 MHz. The IDT71V633 SRAM contains write, data-input, address and control
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IDT71V633
IDT71V633
accepts/9/99
100pinTQFP
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IDT71V2576
Abstract: IDT71V2578 71V2578
Text: 128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Preliminary IDT71V2576 IDT71V2578 Description 128K x 36, 256K x 18 memory configurations Supports high system speed:
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IDT71V2576
IDT71V2578
150MHz
133MHz
100-pin
100pinTQFP
165fBGA
BG119
BQ165
IDT71V2576
IDT71V2578
71V2578
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IDT71V3577
Abstract: IDT71V3579
Text: 128K X 36, 256K X 18 3.3V Synchronous SRAMs 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect Description Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ Preliminary IDT71V3577 IDT71V3579 The IDT71V3577/79 are high-speed SRAMs organized as 128K x 36/256K x 18. The IDT71V3577/79 SRAMs contain write, data,
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IDT71V3577
IDT71V3579
IDT71V3577/79
36/256K
100pinTQFP
119BGA
BG119
BQ165
IDT71V3577
IDT71V3579
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Untitled
Abstract: No abstract text available
Text: SSRAM AS5SP1M18 Plastic Encapsulated Microcircuit 18Mb, 1M x 18 Synchronous SRAM Pipelined Burst, Single Cycle Deselect FEATURES • -55oC to +125oC Operation • Supports bus operation up to 200 MHz • Available speed grades are 200 and 166 MHz • Registered inputs and outputs for pipelined operation
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AS5SP1M18
-55oC
125oC
100-pin
150mA
167MHz
166MHz
350mA
375mA
300mA
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Untitled
Abstract: No abstract text available
Text: 21-S3-C831B/P831B-062003 USER'S MANUAL S3C831B/P831B 8-Bit CMOS Microcontroller Revision 1 S3C831B/P831B 1 PRODUCT OVERVIEW PRODUCT OVERVIEW S3C8-SERIES MICROCONTROLLERS Samsung's S3C8 series of 8-bit single-chip CMOS microcontrollers offers a fast and efficient CPU, a wide range
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21-S3-C831B/P831B-062003
S3C831B/P831B
S3C831B/P831B
50-Pin
TB831B
AS50D-A)
SM6305
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CY7C1367A
Abstract: GVT71512C18 4947a
Text: CY7C1366A/GVT71256C36 CY7C1367A/GVT71512C18 256K x 36/512K x 18 Synchronous Pipelined SRAM Features 18 SRAM cells with advanced synchronous peripheral circuitry and a 2-bit counter for internal burst operation. All synchronous inputs are gated by registers controlled by a
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CY7C1366A/GVT71256C36
CY7C1367A/GVT71512C18
36/512K
100-Pin
1-85050-A
119-Lead
CY7C1367A
GVT71512C18
4947a
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C3157
Abstract: No abstract text available
Text: fax id: 6139 CY7C374Ì :/ C Y P R E S S UltraLogic 128-Macrocell Flash CPLD Features Functional Description • 128 macrocells in eight logic blocks • 64 I/O pins • 5 dedicated inputs including 4 clock pins The CY7C374i is an In-System Reprogrammable Complex
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CY7C374Ì
128-Macrocell
CY7C374i
FLASH370iTM
ASH370i
22V10
C3157
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