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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: N AUER PHILIPS/DISCRETE b^E D bb 53 T 31 DDBDblS Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	PDF	O220AB BUK454-200A/B BUK454 -200A -200B
BU2508A Abstract: BY228 BU2508 Text: Product specification Philips Semiconductors Silicon diffused power transistor BU2508A GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to	OCR Scan	PDF	BU2508A VcE148 7110fl2b Q77S54 BU2508A BY228 BU2508
1B-04 Abstract: No abstract text available Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2520DW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.	OCR Scan	PDF	BU2520DW 1B-06 1B-04 1E-02 100PJPD25
Untitled Abstract: No abstract text available Text: bRE D N AMER PH ILIP S /D IS C R E TE • bb53R31 00304bQ Rlfl ■ P hilips Sem ico nd uctors Pro d uct Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	bb53R31 00304bQ BUK436-100A/B BUK436 -100A -100B 0Q304b4
TRANSISTOR K555 Abstract: BUK555-100A fet junction transistor BUK555-100B T0220AB K-5551 Text: PHILIPS INTERNATIONAL hSE ]> M 711DflEb 0Db424b fl44 • P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power	OCR Scan	PDF	711QflSb K555-1OOA/B T0220AB BUKS55 -100A -100B Tj/C-150 -ID/100 TRANSISTOR K555 BUK555-100A fet junction transistor BUK555-100B K-5551
Untitled Abstract: No abstract text available Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2523DF GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a full plastic envelope intended for use in horizontal deflection circuits of HDTV receivers and pc monitors.	OCR Scan	PDF	BU2523DF IE-06 IE-04 IE-02