"MOSFET Module"
Abstract: E80276 FM200TU-2A
Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated
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FM200TU-2A
E80276
E80271
"MOSFET Module"
E80276
FM200TU-2A
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated
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FM200TU-2A
E323585
March-2013
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated
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FM200TU-2A
E80276
E80271
30K/W
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DIODE T25
Abstract: DIODE T25 4 E80276 FM200TU-2A
Text: MITSUBISHI <MOSFET MODULE> FM200TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE FM200TU-2A ● ID rms . 100A ● VDSS . 100V ● Insulated
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FM200TU-2A
E80276
E80271
30K/W
DIODE T25
DIODE T25 4
E80276
FM200TU-2A
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Mosfet
Abstract: SSF1010
Text: SSF1010 100V N-Channel MOSFET Main Product Characteristics VDSS 100V RDS on 9.5mohm(typ.) ID 100A TO-220 Features and Benefits Marking and Pin Schematic Diagram Assignment Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF1010
O-220
Mosfet
SSF1010
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d20nf10
Abstract: JESD97 STD20NF10 STD20NF10T4 CTJ3 D20NF
Text: STD20NF10 N-channel 100V - 0.038Ω - 100A - DPAK Low gate charge STripFET II Power MOSFET Features Type VDSS RDS on ID STD20NF10 100V <0.045Ω 25A(1) 1. Current limited by package 3 • Exceptional dv/dt capability ■ Application oriented characterization
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STD20NF10
d20nf10
JESD97
STD20NF10
STD20NF10T4
CTJ3
D20NF
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Untitled
Abstract: No abstract text available
Text: STD20NF10 STD20NF10-1 N-channel 100V - 0.038Ω - 100A - DPAK/IPAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STD20NF10-1 100V <0.045Ω 25A(1) STD20NF10 100 <0.045Ω 25A(1) 1. Current Limited by Package • Exceptional dv/dt capability
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STD20NF10
STD20NF10-1
STD20NF10-1
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MOSFET 50V 100A TO-220
Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A
Text: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been
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FDP045N10A
FDI045N10A
MOSFET 50V 100A TO-220
MOSFET 50V 100A
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Untitled
Abstract: No abstract text available
Text: AP85T10AGP-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D Lower On-resistance Fast Switching Characteristic G RoHS Compliant & Halogen-Free BVDSS 100V RDS ON 8m ID 100A S Description
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AP85T10AGP-HF
O-220
100us
100ms
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100V 100A Mosfet
Abstract: TM-04 E80276 FM200TU-2A
Text: 三菱半導体〈MOSFETモジュール〉 FM200TU-2A 大電力スイッチング用 絶縁形 FM200TU-2A ● ID rms . 100A ● VDSS . 100V
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FM200TU-2A
E80276
E80271
100V 100A Mosfet
TM-04
E80276
FM200TU-2A
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APT10M11LVR
Abstract: No abstract text available
Text: APT10M11LVR 0.011Ω 100V 100A POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10M11LVR
O-264
O-264
APT10M1LVR
APT10M11LVR
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MAX1370
Abstract: APT10M09LVR
Text: APT10M09B2VR APT10M09LVR 100V 100A 0.009W POWER MOS V B2VR Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10M09B2VR
APT10M09LVR
O-264
O-264
APT10M09
O-247
MAX1370
APT10M09LVR
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Untitled
Abstract: No abstract text available
Text: STB100NF03L-03-1 N-CHANNEL 100V - 0.0026 Ω - 100A I2PAK STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS R DS on ID STB100NF03L-03-1 30 V <0.0032 Ω 100 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE 100% AVALANCHE TESTED LOGIC LEVEL DEVICE DESCRIPTION
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STB100NF03L-03-1
O-262
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Untitled
Abstract: No abstract text available
Text: APT10M11B2VR 0.011Ω 100V 100A POWER MOS V T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10M11B2VR
O-247
APT10M1B2VR
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Untitled
Abstract: No abstract text available
Text: APT10M09B2VFR APT10M09LVFR 100V 100A 0.009W POWER MOS V FREDFET B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10M09B2VFR
APT10M09LVFR
O-264
O-264
APT10M09
O-247
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APT10M11B2VFR
Abstract: TF6646 APT10M11LVFR
Text: APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10M11B2VFR
APT10M11LVFR
O-264
O-264
APT10M11
O-247
APT10M11B2VFR
TF6646
APT10M11LVFR
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APT10M09B2VFR
Abstract: APT10M09LVFR
Text: APT10M09B2VFR APT10M09LVFR 100V POWER MOS V FREDFET 100A 0.009Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10M09B2VFR
APT10M09LVFR
O-264
O-264
APT10M09B2VFR
O-247
APT10M09LVFR
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Untitled
Abstract: No abstract text available
Text: APT10M09B2VFR APT10M09LVFR 100V POWER MOS V FREDFET 100A 0.009Ω B2VFR T-MAX Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
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APT10M09B2VFR
APT10M09LVFR
O-264
O-264
APT10M09B2VFR
O-247
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Untitled
Abstract: No abstract text available
Text: Advanced Power Electronics Corp. AP85T10AGP-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D Low On-resistance Fast Switching Speed G RoHS-compliant, halogen-free BV DSS 100V R DS ON 8mΩ ID 100A S Description D (tab) Advanced Power MOSFETs from APEC provide the designer with
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AP85T10AGP-HF-3
O-220
O-220
AP85T10A
85T10AGP
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N mos 100v 100A
Abstract: No abstract text available
Text: SEM E mi SM L10M 11LVR LAB 5 T H G E N E R A T IO N M O S F E T T O -2 6 4 A A P ackage O utline Dimensions in mm inches N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS Pin 1 - Gate Pin 2 - Drain Pin 3 - Source • • • • V qss 100V ^D(cont) 100A
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OCR Scan
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11LVR
O-264
N mos 100v 100A
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AOTF12N60
Abstract: AOT12N60 VDS-100V AOTF12
Text: AOT12N60 / AOTF12N60 600V, 12A N-Channel MOSFET formerly engineering part number AOT9610/AOTF9610 General Description Features The AOT12N60 & AOTF12N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance
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AOT12N60
AOTF12N60
AOT9610/AOTF9610
AOT12N60
AOTF12N60
O-220
O-220F
VDS-100V
AOTF12
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Untitled
Abstract: No abstract text available
Text: APTM20UM05S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 200V RDSon = 5m max @ Tj = 25°C ID = 317A @ Tc = 25°C Application CR1 D • • • S Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1 Features G
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APTM20UM05S
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ICE3B0365J
Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)
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SPP21N50C3
SPA21N50C3
SPI21N50C3
SPP16N50C3
SPA16N50C3
SPI16N50C3
SPW21N50C3
SPP12N50C3
SPA12N50C3
SPI12N50C3
ICE3B0365J
ICE3BR4765J
TDA16888
ICE2A765P2
ICE2PCS01G
ICE1PCS02G
ICE2B0565
ICE1PCS02
ICE2pcs02
IPI60R099CP
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Untitled
Abstract: No abstract text available
Text: APTM20UM09S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 200V RDSon = 9m max @ Tj = 25°C ID = 195A @ Tc = 25°C Application CR1 D • • • S Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Q1 Features G
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APTM20UM09S
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