Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    10A4 DIODE Search Results

    10A4 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    10A4 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    10A10 diode

    Abstract: 10A4 diode P600 diode diode 10A6 diode 10A10 10A4 diode p diode p600 P600 10A10 P600 dc
    Text: 10A05 – 10A10 WTE POWER SEMICONDUCTORS Pb 10A STANDARD DIODE Features ! Diffused Junction ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data ! ! ! ! ! ! ! C Case: P-600, Molded Plastic


    Original     		PDF 10A05 10A10 P-600, MIL-STD-202, P-600 10A10 diode 10A4 diode P600 diode diode 10A6 diode 10A10 10A4 diode p diode p600 P600 10A10 P600 dc

    p600

    Abstract: diode p600
    Text: 10A05 – 10A10 WTE POWER SEMICONDUCTORS Pb 10A STANDARD DIODE Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability A B A Mechanical Data        C Case: P-600, Molded Plastic


    Original     		PDF 10A05 10A10 P-600, MIL-STD-202, P-600 p600 diode p600

    10a10 diode

    Abstract: No abstract text available
    Text: 10A05 – 10A10 10A HIGH CURRENT STANDARD DIODE WON-TOP ELECTRONICS Pb Features  Diffused Junction     Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability B A A Mechanical Data     


    Original     		PDF 10A05 10A10 P-600, MIL-STD-202, P-600 10a10 diode

    diode 10A10

    Abstract: No abstract text available
    Text: Formosa MS Axial Leaded General Purpose Rectifiers 10A05 THRU 10A10 List List. 1 Package outline. 2


    Original     		PDF 10A05 10A10 MIL-STD-750D METHOD-1036 JESD22-A102 METHOD-1051 METHOD-4066-2 1000hrs. diode 10A10

    Untitled

    Abstract: No abstract text available
    Text: 10A05 . 10A10 10A05 . 10A10 Silicon Rectifier Diodes – Silizium-Gleichrichterdioden Version 2013-12-09 Nominal Current Nennstrom ±0.2 8.8 ±0.2 62.5 ±0.5 Ø 8.8 Type Ø 1.3 ±0.05 10 A Repetitive peak reverse voltage Periodische Spitzensperrspannung


    Original     		PDF 10A05 10A10 UL94V-0 vol150 10a-1v)

    smd transistor A4S

    Abstract: a4s smd transistor smd transistor A1s smd A1s A1s SMD smd a4s transistor A4s smd SMD A1S datasheet BAW222 Z10C
    Text: BAV222 / BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) BAV222 BAW222 ! ,  ! ,  ,  ,  Type BAV222* BAW222* Package SC75 SC75 Configuration


    Original     		PDF BAV222 BAW222 OT416) BAV222 BAV222* BAW222* smd transistor A4S a4s smd transistor smd transistor A1s smd A1s A1s SMD smd a4s transistor A4s smd SMD A1S datasheet BAW222 Z10C

    smd code A1s

    Abstract: DIODE smd marking A4s smd code A4s DIODE smd marking A1s marking a4s SMD A1S DIODE smd marking Ag smd a4s BAW22
    Text: BAV222 / BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) BAV222 BAW222 ! ,  ! ,  ,  ,  Type BAV222* BAW222* Package SC75 SC75 Configuration


    Original     		PDF BAV222 BAW222 OT416) BAV222 BAV222* BAW222* BAV222, BAW222, smd code A1s DIODE smd marking A4s smd code A4s DIODE smd marking A1s marking a4s SMD A1S DIODE smd marking Ag smd a4s BAW22

    Untitled

    Abstract: No abstract text available
    Text: BAV222 / BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) BAV222 BAW222 ! ,  ! ,  ,  ,  Type Package Configuration Marking BAV222


    Original     		PDF BAV222 BAW222 OT416) BAV222 50/60Hz, BAV222, BAW222,

    SCD-80

    Abstract: SCD80 DIODE smd marking A4 BAW222 BAV222 BCR108T SC75 SC79
    Text: BAV222/BAW222 Silicon Switching Diode • For high-speed switching applications trr < 4ns • Very low diode capacitance (CT < 1.5pF) • Small SMD package SC75 (JEDEC: SOT416) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 BAV222


    Original     		PDF BAV222/BAW222 OT416) BAV222 BAW222 SCD-80 SCD80 DIODE smd marking A4 BAW222 BAV222 BCR108T SC75 SC79

    R7411 2A

    Abstract: PP3V42G3H FERR-220-OHM-2A C5301 C5302 2N7002DW-X-F R7411 macbook macbook pro 13 U5100
    Text: 8 6 7 5 2 3 4 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE ? DATE ? SCHEM,LIO/AUDIO ,MacBook Pro 15"


    Original     		PDF U8300 U8301 U8405 U8415 U8450 XW6800 XW7200 XW7300 XW7301 XW7310 R7411 2A PP3V42G3H FERR-220-OHM-2A C5301 C5302 2N7002DW-X-F R7411 macbook macbook pro 13 U5100

    6A4 mic DIODE

    Abstract: r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF XW6800 R8202 R6803 C8207
    Text: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 04 426972 ENGINEERING RELEASED DATE


    Original     		PDF VR6800 VR8290 XW6800 XW6801 XW6802 XW7100 XW7101 XW7103 XW7200 XW7310 6A4 mic DIODE r8201 FERR-250-OHM C5100 MOSFET J8200 BS520EOF R8202 R6803 C8207

    diode 39b2

    Abstract: R5C485 39B2 39B4 DIODE 22B4 39B3 diode 3.9B2 39B-3 smd code JTP1138
    Text: SENS V20 Series Owner : Kevin, Lee Signature : H.J. KIM W.S. Jung APPROVAL MP 1.0 Aug, 15, 2002 DRACO MAIN BOARD CHECK : : : : : : DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date CPU : Pentium-IV Chip Set : Brookdale-GL / ICH4 DRACO X POWER LED / KBD / PS2 / TOUCHPAD


    Original     		PDF CH7017 draco-16 draco-23 draco-18 draco-38 draco-27 diode 39b2 R5C485 39B2 39B4 DIODE 22B4 39B3 diode 3.9B2 39B-3 smd code JTP1138

    HALO N5

    Abstract: RB342 Transistor SMD 5A6V SW 54B8 smd diode l03 5B1 International Rectifier Ferrite 3c8 transistor 55a3 55D8 top mark smd A12 5PIN
    Text: DS33Z41DK Ethernet Transport Design Kit www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS33Z41 design kit is an easy-to-use evaluation board for the DS33Z41 Ethernet transport-over-serial link device. The DS33Z41DK is intended to be used with a resource card for the serial link. The serial link


    Original     		PDF DS33Z41DK DS33Z41 DS33Z41DK DS33Z41 Z41RSYNC Z41TSYNC CR-55 WAN4Z44 PAGE10 HALO N5 RB342 Transistor SMD 5A6V SW 54B8 smd diode l03 5B1 International Rectifier Ferrite 3c8 transistor 55a3 55D8 top mark smd A12 5PIN

    18b2 diode

    Abstract: BA41-00671A 30B4 DIODE 20B2 diode 5.1B3 B20 C875 B2 CIS10J270NC ICS951413CGLFT ATI IXP450 38b2
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		PDF 533/667MHz) RC410MD SB450 BA41-00659A BA41-00671A RC410MD/RC410ME Sheet18. Sheet19. 018nF 022nF 18b2 diode 30B4 DIODE 20B2 diode 5.1B3 B20 C875 B2 CIS10J270NC ICS951413CGLFT ATI IXP450 38b2

    c6073

    Abstract: C6074 C6091 C6089 1CA033 ar9103 SIL1178 NEC C3568 c6092 U2390
    Text: 6 7 REV STD D CSA 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM


    Original     		PDF RP6152 RP6158 RP6159 RP6707 RP6708 RP6709 RP6710 RP6720 RP6721 RP6722 c6073 C6074 C6091 C6089 1CA033 ar9103 SIL1178 NEC C3568 c6092 U2390

    B30C300

    Abstract: 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		PDF BA41-00574A YONAH667 Sheet18. Sheet19. 047nF RHU002N06 12-C4 B30C300 29A4 samsung electronics 10K 34C1 TP678 gfx E3 diode diode 39b2 TP730 NC7SZ175P6X_NL HDR-10P-SMD

    BA41-00695A

    Abstract: TP1274 CONN-50P-FPC Socket AM2 samsung 30 pin lvds diagram 25a44 SMD AC P27 CY28447 samsung electronics ba41 GND103
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents D Sheet 1. COVER Sheet 2 - 7. DIAGRAM Block/Power & ANNOTATIONS


    Original     		PDF BA41-00694A BA41-00695A YONAH667 047nF RHU002N06 12-C4 TP1274 CONN-50P-FPC Socket AM2 samsung 30 pin lvds diagram 25a44 SMD AC P27 CY28447 samsung electronics ba41 GND103

    CS518

    Abstract: No abstract text available
    Text: DS26518DK Octal T1/E1/J1 Transceiver Demo Kit Daughter Card www.maxim-ic.com FEATURES GENERAL DESCRIPTION The DS26518DK is an easy-to-use evaluation board for the DS26518 octal T1/E1/J1 transceiver. The DS26518DK is a stand-alone system. The board comes complete with a transceiver, transformers,


    Original     		PDF DS26518DK DS26518DK DS26518 RS-232 DS26518 ds26528 TXENA518 CS518

    cs1m

    Abstract: 11d8 Schottky 16a8 k6n137 rb69 rb60 RECTIFIER rj45 extended vertical socket DS26518 11B8 dat518
    Text: DS26518DK Octal T1/E1/J1 Transceiver Demo Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26518DK is an easy-to-use evaluation board for the DS26518 octal T1/E1/J1 transceiver. The DS26518DK is a stand-alone system. The board comes complete with a transceiver, transformers,


    Original     		PDF DS26518DK DS26518DK DS26518 RS-232 DS26518 DS26528DK02A0 ds26528 cs1m 11d8 Schottky 16a8 k6n137 rb69 rb60 RECTIFIER rj45 extended vertical socket 11B8 dat518

    CQ649

    Abstract: c214 diode b14 diode ar3012 56B2 51B3 R819B 55b2 samsung electronics ba41 HDR-10P-1R-SMD
    Text: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. Table of Contents HABANA CPU :Intel Yonah -2M/1M


    Original     		PDF BA41-# YONAH667 Sheet18. Sheet00nF 100nF 100nF HDR-10P-SMD SW1005 CONN-12P-FPC CQ649 c214 diode b14 diode ar3012 56B2 51B3 R819B 55b2 samsung electronics ba41 HDR-10P-1R-SMD

    11d8 Schottky

    Abstract: T1341 RB39 pdata 16a8 RB35 RB59 csr schematic usb to spi rj45 k6n137 RB40
    Text: DS26518DK Octal T1/E1/J1 Transceiver Demo Kit Daughter Card www.maxim-ic.com GENERAL DESCRIPTION FEATURES The DS26518DK is an easy-to-use evaluation board for the DS26518 octal T1/E1/J1 transceiver. The DS26518DK is a stand-alone system. The board comes complete with a transceiver, transformers,


    Original     		PDF DS26518DK DS26518DK DS26518 RS-232 DS26518 DS26528DK02A0 ds26528 11d8 Schottky T1341 RB39 pdata 16a8 RB35 RB59 csr schematic usb to spi rj45 k6n137 RB40

    Ss1015

    Abstract: s40d40c
    Text: PRODUCT SELECTION GUIDE Power Rectifiers 1 http://www.wontop.com WON-TOP ELECTRONICS 2 Contents Introduction 4 Selector Guides 5 Schottky Rectifiers 8 SMD 8 Axial Lead 14 Power-pack 16 Superfast Rectifiers 20 SMD 20 Axial Lead 22 Power-pack 23 Ultrafast Rectifiers


    Original     		PDF

    scr preregulator

    Abstract: U132 SEM-800 dixon 1N4037 teslas flyback xfmr 3.5 mh flyback pfc using constant on-time transistor ad 3000 watt half bridge converter
    Text: U-132 APPLICATION NOTE POWER FACTOR CORRECTION USING THE UC3852 CONTROLLED ON-TIME ZERO CURRENT SWITCHING TECHNIQUE BILL ANDREYCAK INTRODUCTION The controlled on-time, zero current switching technique provides a simple and efficient so­ lution to obtaining high power factor correction. This discontinuous inductor current approach


    OCR Scan     		PDF U-132 UC3852 IRF830 UC3852 scr preregulator U132 SEM-800 dixon 1N4037 teslas flyback xfmr 3.5 mh flyback pfc using constant on-time transistor ad 3000 watt half bridge converter

    L64811

    Abstract: M14008 video frame buffer AM27C256-205JC L64853 L64801 L64S24 L64825
    Text: LSI ILOGIC 53G4ÖC4 DDlllSfl 7 3 cì BBLLC L64825 SBus Video Frame Buffer Technical Manual E3 S304504 ODll'iS'J b7S EE3LLC This document is preliminary. As such, it contains data derived from func­ tional simulations and performance estimates. LSI Logic has not verified the


    OCR Scan     		PDF L64825 S304504 D-102 SparKTT-20 SparKIT-20 ST02T00 L64811 M14008 video frame buffer AM27C256-205JC L64853 L64801 L64S24