BA892-02V
Abstract: SC79
Text: BA892-02V Silicon Rf Switching Diode For band switching in TV / VTR 2 tuners up to 2GHz Low forward resistance, small capacitance, small inductance 1 VES05991 Type Marking Pin Configuration Package BA892-02V AA 1=C SC79 2=A Maximum Ratings Parameter Symbol
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BA892-02V
VES05991
Jul-11-2001
100MHz
EHD07009
EHD07010
BA892-02V
SC79
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BAR67-02V
Abstract: SC79
Text: BAR67-02V Silicon PIN Diode Low loss RF switch 2 RF attenuator Low series capacitance and resistance 1 VES05991 Type Marking Pin Configuration Package BAR67-02V TT 1=C SC79 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 150 V Forward current
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BAR67-02V
VES05991
Jul-06-2001
BAR67-02V
SC79
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MA4ST300
Abstract: MA4ST320 MA4ST330 MA4ST340 MA4ST350 SC79
Text: MA4ST300 Series Low-Voltage / Wide Band Si Hyperabrupt Varactors Rev. V6 Features • Surface Mount Packages SC70 3LD, SC79, SOD-323 • High Capacitance Ratio at Low Voltages • High Q at Low Voltages • SPC Process for Superior C-V Repeatability • Available as Single and Common Cathode Pairs
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MA4ST300
OD-323)
MA4ST320
MA4ST330
MA4ST340
MA4ST350
SC79
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Untitled
Abstract: No abstract text available
Text: BAR67-02V Silicon PIN Diode Low loss RF switch 2 RF attenuator Low series capacitance and resistance 1 VES05991 Type Marking Pin Configuration Package BAR67-02V TT 1=C SC79 2=A Maximum Ratings Parameter Symbol Diode reverse voltage VR 150 V Forward current
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BAR67-02V
VES05991
Feb-19-2002
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Untitled
Abstract: No abstract text available
Text: BAS52. Silicon Schottky Diode Medium current rectifier Schottky diode Low forward voltage at 200mA High reverse voltage BAS52-02V 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Package SC79 Configuration
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BAS52.
200mA
BAS52-02V
50/60Hz,
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marking code INFINEON
Abstract: A2003 marking code of 0 to Z BB867-02V
Text: BB867. Silicon Tuning Diode For SAT - Indor units High capacitance ratio C1V /C25V typ.15.8 Low series inductance Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration
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BB867.
/C25V
BB867-02V
BB867-02V*
Nov-14-2002
marking code INFINEON
A2003
marking code of 0 to Z
BB867-02V
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Untitled
Abstract: No abstract text available
Text: BAS52. Silicon Schottky Diode Medium current rectifier Schottky diode Low forward voltage at 200mA High reverse voltage BAS52-02V 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Package SC79 Configuration
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BAS52.
200mA
BAS52-02V
50/60Hz,
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10 SOT-23
Abstract: 236 SOD SOD523 to sc90 SC79
Text: Package Styles -01 CHIP ONLY -02 DO-7 GLASS AXIAL LEAD -06 SOD-323 PLASTIC SURFACE MOUNT -07 SOD523 SC79 SC90 PLASTIC SURFACE MOUNT -08 SOT-23 SINGLE CHIP PLASTIC SURFACE MOUNT -09 SOT-23 COMMON ANODE PLASTIC SURFACE MOUNT -10 SOT-23 COMMON CATHODE PLASTIC SURFACE MOUNT
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OD-323
OD523
OT-23
OT-223
10 SOT-23
236 SOD
SOD523
to sc90
SC79
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Untitled
Abstract: No abstract text available
Text: MA4ST300 Series Low-Voltage / Wide Band Si Hyperabrupt Varactors M/A-COM Products Rev. V5 Features • Surface Mount Packages SC70 3LD, SC79, SOD-323 • High Capacitance Ratio at Low Voltages • High Q at Low Voltages • SPC Process for Superior C-V Repeatability
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MA4ST300
OD-323)
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-speed diode LBAS516T1G DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 SC79 SMD plastic package. 1 2 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns
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LBAS516T1G
LBAS516T1
OD523
OD-523
LBAS516T3G
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BAR65-02V
Abstract: SC79
Text: BAR65-02V Silicon RF Switching Diode Low loss, low capacitance PIN-diode 2 Band switch for TV-tuners Series diode for mobile communication transmit-receiver switch 1 VES05991 Type Marking Pin Configuration Package BAR65-02V NN 1=C SC79 2=A Maximum Ratings
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BAR65-02V
VES05991
Jul-06-2001
BAR65-02V
SC79
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sc793
Abstract: SC7937 SC*37
Text: VITESSE SEMICONDUCTOR CORPORATION Advance Product Information Single Supply 2.5 Gb/s Voltage Driver SC7937 Features • Rise Times Typically 100ps • Single Power Supply, 5 Volt or 5.2 Volts • High Speed Operation Up to 2.5Gb/s NRZ Data • Direct Access to Modulation and Bias FET’s
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SC7937
100ps
VSC7937
G52200-0,
sc793
SC7937
SC*37
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transistor p2w
Abstract: SC79
Text: 06037 Only One Name Means ProTek’Tion SC79 PACKAGE OUTLINE & DIMENSIONS SC79 PACKAGE PACKAGE OUTLINE C A B PACKAGE DIMENSIONS F INCHES MIN MAX MIN MAX A B C D E F 0.043 0.028 0.059 0.049 0.035 0.066 0.028 0.008 1.10 0.70 1.50 1.30 0.90 1.70 0.50 0.08
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EIA-481.
Suffix-T74
transistor p2w
SC79
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Untitled
Abstract: No abstract text available
Text: BAS52. Silicon Schottky Diode Medium current rectifier Schottky diode Low forward voltage at 200mA High reverse voltage BAS52-02V 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Package SC79 Configuration
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BAS52.
200mA
BAS52-02V
50/60Hz,
100ms
Nov-04-2002
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-speed diode LBAS516T1G DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology, and encapsulated in the SOD523 SC79 SMD plastic package. 1 2 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns
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LBAS516T1G
LBAS516T1
OD523
OD523
SC-79
LBAS516T
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BAS16
Abstract: No abstract text available
Text: BAS16. Silicon Switching Diode For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U 6 3 4 5 D 1 1 1 D 2 4 D 1 1 Package SOT23 TSLP-2-1 SC79 SCD80 SOD323 TSLP-4-4 SOT363 SC74 SOT323 3 D 3 2 2 Type BAS16
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BAS16.
BAS16
BAS16W
BAS16-02L
BAS16-02V
BAS16-02W
BAS16-03W
BAS16S
BAS16U
SCD80
BAS16
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Untitled
Abstract: No abstract text available
Text: BAS52. Silicon Schottky Diode • Medium current rectifier Schottky diode • Low forward voltage at 200mA • High reverse voltage BAS52-02V 1 2 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Package SC79 Configuration
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BAS52.
200mA
BAS52-02V
50/60Hz,
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diode marking gg 2a
Abstract: diode gg 2a BAR63-02V gg 2a SC79
Text: BAR63-02V Silicon PIN Diode PIN diode for high speed switching 2 of RF signals Low forward resistance, small inductance Very low capacitance For frequencies up to 3 GHz 1 VES05991 Type Marking Pin Configuration Package BAR63-02V GG 1=C SC79 2=A Maximum Ratings
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BAR63-02V
VES05991
Aug-28-2001
100MHz
EHD07139
EHD07138
EHD07171
diode marking gg 2a
diode gg 2a
BAR63-02V
gg 2a
SC79
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Untitled
Abstract: No abstract text available
Text: MA4ST300 Series Low-Voltage / Wide Band Si Hyperabrupt Varactors M/A-COM Products Rev. V5 Features • Surface Mount Packages SC70 3LD, SC79, SOD-323 • High Capacitance Ratio at Low Voltages • High Q at Low Voltages • SPC Process for Superior C-V Repeatability
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MA4ST300
OD-323)
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LBAS516T1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology and encapsulated in the SOD523 SC79 SMD plastic package. LBAS516T1G S-LBAS516T1G FEATURES • Ultra small plastic SMD package
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LBAS516T1
OD523
LBAS516T1G
S-LBAS516T1G
OD-523
AEC-Q101
LBAS516T1G
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BAS52-02V
Abstract: BAS52 SC79
Text: BAS52. Silicon Schottky Diode Medium current rectifier Schottky diode Low forward voltage at 200mA High reverse voltage BAS52-02V 1 2 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BAS52-02V Package SC79 Configuration
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BAS52.
200mA
BAS52-02V
50/60Hz,
100ms
Oct-11-2002
BAS52-02V
BAS52
SC79
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BB867-02V
Abstract: BB867 SC79 marking 06
Text: BB867. Silicon Tuning Diode For SAT - Indor units High capacitance ratio C1V /C25V typ.15.8 Low series inductance Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V 1 2 Type BB867-02V* Package SC79 Configuration
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BB867.
/C25V
BB867-02V
BB867-02V*
Nov-14-2002
/CT25
/CT28
BB867-02V
BB867
SC79
marking 06
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. High-speed Diode DESCRIPTION The LBAS516T1 is a high-speed switching diode fabricated in planar technology,and encapsulated LBAS516T1G in the SOD523 SC79 SMD plastic package. 1 FEATURES • Ultra small plastic SMD package · High switching speed: max. 4 ns
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LBAS516T1
LBAS516T1G
OD523
OD-523
LBAS516T3G
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INFINEON date code marking
Abstract: No abstract text available
Text: BB867. Silicon Tuning Diode • For SAT tuners • High capacitance ratio C1V/C25V typ.15.8 • Low series inductance • Excellent uniformity and matching due to "in-line" matching assembly procedure BB867-02V Type BB867-02V Package SC79 Configuration
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BB867.
C1V/C25V
BB867-02V
INFINEON date code marking
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