EIA-364-65A
Abstract: EIA364-65A IEC-60512-5 test 9b h155 IEC-60512-5 test 9a 6D120
Text: PRODUCT SPECIFICATION 製品規格 108-78472 10AUG07 Rev A. Super Low Profile SIM コネクタ H=1.55MAX （Super Low Profile SIM Connector H=1.55MAX） 1. 適用範囲 1.1 1.1 内容 本規格はSUPER LOW PROFILE SLIDING SIM H=1.55の製品性能試験方法、品質保証の必要条件
|
Original
|
10AUG07
55MAX
55MAX
120sec
50sec
80sec
250MAX
EIA-364-65A
EIA364-65A
IEC-60512-5 test 9b
h155
IEC-60512-5 test 9a
6D120
|
PDF
|
P1015-BD
Abstract: No abstract text available
Text: 43.5-46.5 GHz GaAs MMIC Power Amplifier P1015-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Input/Output Match 13.0 dB Small Signal Gain +31.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing
|
Original
|
10-Aug-07
P1015-BD
MIL-STD-883
XP1015-BD-000V
XP1015-BD-EV1
XP1015
|
PDF
|
0.16 VDE Wire datasheet
Abstract: VDRHE 2381 615 E98144 Varistor 271
Text: 2381 58. ./VDRH.E Vishay BCcomponents High Surge Suppression Varistors FEATURES RoHS • Zinc oxide disc, epoxy coated COMPLIANT • Straight or kinked leads • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATION • Supression of transients
|
Original
|
2002/95/EC
2002/96/EC
UL94V-0.
08-Apr-05
0.16 VDE Wire datasheet
VDRHE
2381 615
E98144
Varistor 271
|
PDF
|
AN609
Abstract: Si9424BDY
Text: Si9424BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si9424BDY
AN609
10-Aug-07
|
PDF
|
133532
Abstract: AN609 Si9410BDY
Text: Si9410BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si9410BDY
AN609
10-Aug-07
133532
|
PDF
|
7834
Abstract: vishay MOSFET AN609 SiA811DJ 149494
Text: SiA811DJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
SiA811DJ
AN609
10-Aug-07
7834
vishay MOSFET
149494
|
PDF
|
TXC Corporation
Abstract: Crystal Oscillator TXC
Text: TXC CORPORATION 4F, NO. 16, Sec. 2 Chung Yang S Rd., Peitou, Taipei, Taiwan. TEL : 886-2-2894-1202 , 886-2-2895-2201 FAX : 886-2-2894-1206 , 886-2-2895-6207 www.txccorp.com SPECIFICATION FOR APPROVAL CUSTOMER : PRODUCT TYPE : SMD SEAM SEALING CXO 5.0*3.2 NOMINAL FREQ.
|
Original
|
000000MHz
7C24000012
MIL-STD-202F
MIL-STD-883E
1000Hrs
C5023
RH100%
240Hrs
C6701
TXC Corporation
Crystal Oscillator TXC
|
PDF
|
XB1005-BD
Abstract: DM6030HK P1005-BD TS3332LD XP1005 XP1005-BD XU1001-BD
Text: 35.0-43.0 GHz GaAs MMIC Power Amplifier P1005-BD August 2007 - Rev 10-Aug-07 Features Excellent Saturated Output Stage Balanced Design Provides Good Output Match 26.0 dB Small Signal Gain +24.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing
|
Original
|
P1005-BD
10-Aug-07
MIL-STD-883
XP1005-BD-000V
XP1005-BD-EV1
XP1005
XB1005-BD
DM6030HK
P1005-BD
TS3332LD
XP1005-BD
XU1001-BD
|
PDF
|
CMM6027-SC
Abstract: No abstract text available
Text: DC-4 GHz High Dynamic Range Power Amplifier CMM6027-SC August 2007 - Rev 10-Aug-07 Features 46 dBm Output lP3 27 dBm P1dB 15 dB Gain @ 2GHz 2.8 dB Noise Figure RoHS Compliant SOT-89 Package Single Positive Power Supply 3V ~ 5V MTTF > 100 Years General Description
|
Original
|
CMM6027-SC
10-Aug-07
OT-89
CMM6027-SC
supMM6027-SC
PB-CMM6027-SC-00C0
|
PDF
|
2231 0048
Abstract: AN609 Si9948AEY 17818 matching mosfet
Text: Si9948AEY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si9948AEY
AN609
10-Aug-07
2231 0048
17818
matching mosfet
|
PDF
|
AN609
Abstract: Si9433BDY
Text: Si9433BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si9433BDY
AN609
10-Aug-07
|
PDF
|
4891
Abstract: 7476 AN609 Si9926BDY 45-4003 112-330
Text: Si9926BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si9926BDY
AN609
10-Aug-07
4891
7476
45-4003
112-330
|
PDF
|
on 4409
Abstract: transistor on 4409 7434 AN609 Si9434BDY
Text: Si9434BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si9434BDY
AN609
10-Aug-07
on 4409
transistor on 4409
7434
|
PDF
|
7404
Abstract: 7404 not 7404 data sheet AN609 Si8902EDB
Text: Si8902EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si8902EDB
AN609
10-Aug-07
7404
7404 not
7404 data sheet
|
PDF
|
|
|
C 6090
Abstract: 2437 power mosfet 7400 spice model c 2437 power mosfet data AN609 Si9435BDY
Text: Si9435BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si9435BDY
AN609
10-Aug-07
C 6090
2437 power mosfet
7400 spice model
c 2437 power mosfet data
|
PDF
|
000-7159-30
Abstract: EDSO-G16 000-7430-30
Text: more than you expect Discrete Single Port 10/100 Base-T EDSO-G16 LANDatacom Features Common Electrical Characteristics Inductance 350µH Min. Dielectic Rating 1500VAC Transmit Turns Ratio 1CT:1CT Receive Turns Ratio 1CT:1CT Part Number 000-7090-30 000-7159-30
|
Original
|
EDSO-G16
1500VAC
100kHz,
1M-100MHz
10-Aug-07
000-7159-30
EDSO-G16
000-7430-30
|
PDF
|
mmic SOT-89 07
Abstract: P0* DBM SOT89 CMM6027-SC 6027g
Text: DC-4 GHz High Dynamic Range Power Amplifier CMM6027-SC August 2007 - Rev 10-Aug-07 Features 46 dBm Output lP3 27 dBm P1dB 15 dB Gain @ 2GHz 2.8 dB Noise Figure RoHS Compliant SOT-89 Package Single Positive Power Supply 3V ~ 5V MTTF > 100 Years General Description
|
Original
|
10-Aug-07
CMM6027-SC
OT-89
CMM6027-SC
PB-CMM6027-SC-00C0
mmic SOT-89 07
P0* DBM SOT89
6027g
|
PDF
|
ACT8700
Abstract: TQFN44-24
Text: ACT8700 Product Brief, 10-Aug-07 Advanced Product Information–All Information Subject to Change Four Channel Integrated Power Management IC for Handheld Portable Equipment FEATURES GENERAL DESCRIPTION • Multiple Patents Pending Li+ Battery Charger with Integrated MOSFET
|
Original
|
ACT8700
10-Aug-07
ACT8700
100mA/500mA
350mA
500mA
TQFN44-24
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY 1 7 C 0 E L E C T R O N IC S -, P U B L IC A T IO N R IG H T S 2 - R E V IS IO N S RESERVED. GP C O R P O R A T IO N . 00 D E S C R IP T IO N 03 1O3 R P ER JDP CWR
|
OCR Scan
|
10AUG07
HDE-20,
AR2000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 3 4 T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC + 0.38 - 0 .0 0 + .015 RESERVED. C O R P O R A T IO N . R E V IS IO N S D IS T 00 AA D E S C R IP T IO N
|
OCR Scan
|
10AUG07
16AUG
|
PDF
|
Untitled
Abstract: No abstract text available
Text: TH I S DRAW ING E i IS U NP UBL I S HE D. BY TYCO E L E C T R O N I C S C O P Y R I G H T 20 SEE 20 R E L E A S E D FOR P U B L I C A T I O N DETA I L CORPORATION. ALL RIGHTS REV 1SI ONS m DESCR1PTION LOC RE S E RV E D. p LTR DATE ECN DWN APVD 04 REVI SED
|
OCR Scan
|
02FEB
ECR-07-01480
ECR-07-0
ECR-07-002702
ECR-09-
70X0700
|
PDF
|
HDE-20
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - , - RESERVED. C O R P O R A T IO N . •0.25 M A X [. 0 1 0 ] D r - 3 _ 3 Z D E T A IL SCALE
|
OCR Scan
|
31MAR2000
EC0-07-
10AUG07
EC0-09-021
15SEP09
MIL-G-45204,
QQ-N-290.
AR745270-6
HDE-20,
HDE-20
|
PDF
|
Untitled
Abstract: No abstract text available
Text: T H IS D R A W IN G IS U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T BY 1 T C 0 2 3 4 E L E C T R O N IC S P U B L IC A T IO N R IG H T S - , - RESERVED. GP C O R P O R A T IO N . R E V IS IO N S 00 D E S C R IP T IO N L2 .9 76 .9 6 6 " .1O
|
OCR Scan
|
10AUG07
HDE-20
AR2000
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T BY TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S - 2 , - LOC D IS T RESERVED. C O R P O R A T IO N . R E V IS IO N S 50 AF D E S C R IP T IO N REVISED 1 FITS 0 . 8 1 + 0 . 0 2 5
|
OCR Scan
|
10AUG07
|
PDF
|