Si8902EDB-T2-E1
Abstract: Si8902EDB t2 955 e S8304
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si8902EDB
18-Jul-08
Si8902EDB-T2-E1
t2 955 e
S8304
|
SI8407DB
Abstract: 8902E Si8902EDB
Text: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8407DB Si8902EDB MICRO FOOTr 2X3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8407DB T2 Si8902EDB T2 Device on Tape Orientation 8902E
|
Original
|
PDF
|
Si8407DB
Si8902EDB
275-mm
8902E
8902E
|
8902E
Abstract: J-STD-020A Si8902EDB
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET
|
Original
|
PDF
|
Si8902EDB
8902E
08-Apr-05
8902E
J-STD-020A
|
Untitled
Abstract: No abstract text available
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si8902EDB
8902E
8902E
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET
|
Original
|
PDF
|
Si8902EDB
8902E
8902E
63Sn/37Pb
S-40861--Rev.
03-May-04
|
Untitled
Abstract: No abstract text available
Text: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) 20 rSS(on) (W) ISS (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET
|
Original
|
PDF
|
Si8902EDB
8902E
8902E
63Sn/37Pb
S-20616--Rev.
13-May-02
|
Untitled
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix MICRO FOOT 2 x 3: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8407DB-T2, Si8902EDB-T2 4.00 0.10 4.00 0.10 + 0.10 Ø 1.50 - 0.00 A 2.00 0.05 B 1.75 0.10 B 5.50 0.05 12.0 + 0.30 - 0.10 SECTION A-A A SECTION B-B Notes 1. 10 sprocket hole pitch cumulative tolerance ± 0.2.
|
Original
|
PDF
|
Si8407DB-T2
Si8902EDB-T2
93-5211-X)
92-5210-X)
C10-0948-Rev.
11-Oct-10
93-5223-X
11-Oct-10
|
Untitled
Abstract: No abstract text available
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si8902EDB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
J-STD-020A
Abstract: Si8902EDB
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET
|
Original
|
PDF
|
Si8902EDB
8902E
S-50066--Rev.
17-Jan-05
J-STD-020A
|
Si8902EDB
Abstract: J-STD-020A
Text: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET
|
Original
|
PDF
|
Si8902EDB
8902E
63Sn/37Pb
S-20802--Rev.
01-Jul-02
J-STD-020A
|
7404
Abstract: 7404 not 7404 data sheet AN609 Si8902EDB
Text: Si8902EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
PDF
|
Si8902EDB
AN609
10-Aug-07
7404
7404 not
7404 data sheet
|
Untitled
Abstract: No abstract text available
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si8902EDB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si8902EDB
8902E
8902E
11-Mar-11
|
Si8407DB
Abstract: Si8902EDB
Text: Tape Information Vishay Siliconix MICRO FOOTr 2x3: 0.8−mm PITCH, 0.275−mm BUMP HEIGHT Si8407DB−T2, Si8902EDB−T2 4.00"0.10 4.00"0.10 +0.10 O1.50 - 0.00 A 2.00"0.05 0.279"0.02 B BO B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 - 0.10 5_ MAX SECTION A-A A 5_ MAX
|
Original
|
PDF
|
275-mm
Si8407DB-T2
Si8902EDB-T2
10-sprocket
93-5211-x)
92-5210-x)
S-31501--Rev.
14-Jul-03
Si8407DB
Si8902EDB
|
|
|
Si8407DB-T2
Abstract: No abstract text available
Text: Tape Information Vishay Siliconix MICRO FOOTr 2x3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8407DB-T2, Si8902EDB-T2 4.00"0.10 4.00"0.10 +0.10 O1.50−0.00 A 2.00"0.05 B B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 −0.10 SECTION A-A A SECTION B-B NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2 mm.
|
Original
|
PDF
|
275-mm
Si8407DB-T2
Si8902EDB-T2
92-5210-x)
S-40510--Rev.
17-May-04
|
J-STD-020A
Abstract: Si8902EDB
Text: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET
|
Original
|
PDF
|
Si8902EDB
8902E
63Sn/37Pb
S-21337--Rev.
05-Aug-02
J-STD-020A
|
Untitled
Abstract: No abstract text available
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si8902EDB
8902E
8902E
18-Jul-08
|
G-263
Abstract: No abstract text available
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET
|
Original
|
PDF
|
Si8902EDB
8902E
8902E
63Sn/37Pb
S-32415--Rev.
24-Nov-03
G-263
|
Untitled
Abstract: No abstract text available
Text: Si8902EDB Vishay Siliconix New Product Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET
|
Original
|
PDF
|
Si8902EDB
8902E
8902E
63Sn/37Pb
S-31863--Rev.
15-Sep-03
|
Si8902EDB
Abstract: Si8902EDB-T2-E1
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si8902EDB
11-Mar-11
Si8902EDB-T2-E1
|
Si8902EDB
Abstract: No abstract text available
Text: SPICE Device Model Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
PDF
|
Si8902EDB
S-60075Rev.
23-Jan-06
|
UP78
Abstract: Aaa SMD MARKING
Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
|
Original
|
PDF
|
Si8401DB
Si3443DV
Si8401DB-T1-E1
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
UP78
Aaa SMD MARKING
|
Untitled
Abstract: No abstract text available
Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si8473EDB
2002/95/EC
8473E
Si8473EDB-T1-E1
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
SI-8100D
Abstract: si8100 Si8100DB
Text: Si8100DB Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, d RDS(on) () (Max.) 25 0.0108 at VGS = 10 V 9.5 0.0124 at VGS = 4.5 V 8.9 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
|
Original
|
PDF
|
Si8100DB
2002/95/EC
Si8100DB-T2trademarks
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
SI-8100D
si8100
|
