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Advanced Thermal Solutions Inc ATS-10G-131-C2-R0 HEATSINK 60X60X20MM XCUT T766
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ATS-10G-131-C2-R0	Tray	25		1	1 $5.58 10 $5.432 100 $5.58 1000 $5.58 10000 $5.58	Buy Now
Avnet Americas	ATS-10G-131-C2-R0	Tray		8 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Advanced Thermal Solutions Inc ATS-10G-131-C1-R0 HEATSINK 60X60X20MM XCUT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ATS-10G-131-C1-R0	Bulk			100	1 - 10 - 100 $5.594 1000 $5.594 10000 $5.594	Buy Now
Avnet Americas	ATS-10G-131-C1-R0	Tray		8 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components GT10G131(TE12L,Q) IGBT 400V 1W 8-SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GT10G131(TE12L,Q)	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Advanced Thermal Solutions Inc ATS-10G-131-C3-R0 HEATSINK 60X60X20MM XCUT T412
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	ATS-10G-131-C3-R0	Bulk			100	1 - 10 - 100 $6.7375 1000 $6.7375 10000 $6.7375	Buy Now
Avnet Americas	ATS-10G-131-C3-R0	Tray		8 Weeks	25	1 - 10 - 100 - 1000 - 10000 -	Get Quote
ATGBICS TN-CWDM-10G-1310-40-C Compatible SFP+ 10G
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TN-CWDM-10G-1310-40-C	Tray			1	1 $137 10 $137 100 $130.2 1000 $116.5 10000 $116.5	Buy Now

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10G131 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
10G131 Abstract: No abstract text available Text: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode	Original	GT10G131 10G131	PDF
Untitled Abstract: No abstract text available Text: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)	Original	GT10G131	PDF
10g131 Abstract: GT10G131 RG110 ic 3 51 2A Text: 10G131 東芝伝導度変調型電界効果トランジスタシリコンNチャネルIGBT 10G131 ○ 直列式自動調光ストロボ用 • 薄型面実装外囲器です。単位: mm : 樹脂厚み 1.5 ± 0.2 mm • 第 5 世代トレンチゲート構造品です。	Original	GT10G131 20070701-JA 10g131 GT10G131 RG110 ic 3 51 2A	PDF
10G131 Abstract: No abstract text available Text: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)	Original	GT10G131 10G131	PDF
Untitled Abstract: No abstract text available Text: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • 5th generation trench gate structure IGBT • Enhancement-mode • 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 200 A) • Peak collector current: IC = 200 A (max)	Original	GT10G131	PDF
GT10G131 Abstract: 10G131 Text: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Strobe Flash Applications Unit: mm • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode	Original	GT10G131 GT10G131 10G131	PDF
10g131 Abstract: ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170 Text: 10G131 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT 10G131 Unit: mm Strobe Flash Applications • Supplied in compact and thin package requires only a small mounting area • 5th generation trench gate structure IGBT • Enhancement-mode	Original	GT10G131 10g131 ic MARKING QG GT10G131 TOSHIBA IGBT DATA BOOK NOR GATE IC A3170	PDF