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    10MHZ MOSFET Search Results

    10MHZ MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R80186-10 Rochester Electronics LLC R80186 - Microprocessor, 16-Bit, 10MHz, MOS, CQCC68 Visit Rochester Electronics LLC Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation

    10MHZ MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    MAX14565

    Abstract: N02 Transistor rf max1456 DG540 DG542 DG643 MAX456 MAX4565 MAX4565CPP MAX4565CWP
    Text: 19-1252; Rev 0; 7/97 Quad/Dual, Low-Voltage, Bidirectional RF/Video Switches _Applications _Features ♦ High 50Ω Off Isolation: -83dB at 10MHz ♦ Low 50Ω Crosstalk: -87dB at 10MHz ♦ DC to 350MHz -3dB Signal Bandwidth


    Original     		-83dB 10MHz -87dB 350MHz 100MHz DG540, DG542, DG643 MAX4565/MAX4566/MAX4567 MAX14565 N02 Transistor rf max1456 DG540 DG542 DG643 MAX456 MAX4565 MAX4565CPP MAX4565CWP PDF

    N02 Transistor rf

    Abstract: DG540 DG542 DG643 MAX456 MAX4565 MAX4565CPP MAX4565CWP MAX4566 MAX4567
    Text: 19-1252; Rev 0; 7/97 Quad/Dual, Low-Voltage, Bidirectional RF/Video Switches _Applications _Features ♦ High 50Ω Off Isolation: -83dB at 10MHz ♦ Low 50Ω Crosstalk: -87dB at 10MHz ♦ DC to 350MHz -3dB Signal Bandwidth


    Original     		-83dB 10MHz -87dB 350MHz 100MHz DG540, DG542, DG643 MAX4565/MAX4566/MAX4567 N02 Transistor rf DG540 DG542 DG643 MAX456 MAX4565 MAX4565CPP MAX4565CWP MAX4566 MAX4567 PDF

    W202

    Abstract: N02 Transistor rf Nippon capacitors
    Text: 19-1232; Rev 0; 6/97 Quad/Dual, Low-Voltage, Bidirectional RF/Video Switches _Features _Applications ♦ Low 50Ω Insertion Loss: -1dB at 100MHz ♦ High 50Ω Off Isolation: -80dB at 10MHz ♦ Low 50Ω Crosstalk: -80dB at 10MHz


    Original     		MAX4545/MAX4546/MAX4547 300MHz MAX4545 MAX4546 MAX4547 -80dB 10MHz. MAX4545EWP-T MAX4545C W202 N02 Transistor rf Nippon capacitors PDF

    DG540

    Abstract: DG542 DG643 MAX454 MAX4545 MAX4545CPP MAX4545CWP MAX4546 MAX4547 N02 Transistor rf
    Text: 19-1232; Rev 0; 6/97 Quad/Dual, Low-Voltage, Bidirectional RF/Video Switches _Features _Applications ♦ Low 50Ω Insertion Loss: -1dB at 100MHz ♦ High 50Ω Off Isolation: -80dB at 10MHz ♦ Low 50Ω Crosstalk: -80dB at 10MHz


    Original     		100MHz -80dB 10MHz 300MHz DG540, DG542, DG643 MAX4545/MAX4546/MAX4547 DG540 DG542 DG643 MAX454 MAX4545 MAX4545CPP MAX4545CWP MAX4546 MAX4547 N02 Transistor rf PDF

    dg542 max4546

    Abstract: spst switch "Video Switches" MAX4545CWP N02 Transistor rf on/off switch spst DG540 DG542 DG643 MAX454
    Text: 19-1232; Rev 0; 6/97 Quad/Dual, Low-Voltage, Bidirectional RF/Video Switches _Features _Applications ♦ Low 50Ω Insertion Loss: -1dB at 100MHz ♦ High 50Ω Off Isolation: -80dB at 10MHz ♦ Low 50Ω Crosstalk: -80dB at 10MHz


    Original     		100MHz -80dB 10MHz 300MHz DG540, DG542, DG643 MAX4545/MAX4546/MAX4547 dg542 max4546 spst switch "Video Switches" MAX4545CWP N02 Transistor rf on/off switch spst DG540 DG542 DG643 MAX454 PDF

    mosfet rqw 130

    Abstract: amp op 4565 N02 Transistor rf RC 4565 RC 4565 SO TRANSISTOR 1PW Nippon capacitors 0/N02 Transistor rf
    Text: 19- 1252; Rev 0; 7/97 V M / X I Æ Quad/Dual, Low -Voltage, B idirectional RF/Video S w itch es Features ♦ High 500 Off Isolation: -83dB at 10MHz ♦ Low 500 Crosstalk:-87dB at 10MHz ♦ DC to 350MHz -3dB Signal Bandwidth ♦ 600 Signal Paths with ±5V Supplies


    OCR Scan     		MAX4565/MAX4566/MAX4567 350MHz MAX4565 MAX4566 MAX4567 -83dB 10MHz. MAX4566CSE MAX4566CEE MAX4566C/D mosfet rqw 130 amp op 4565 N02 Transistor rf RC 4565 RC 4565 SO TRANSISTOR 1PW Nippon capacitors 0/N02 Transistor rf PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-1252; Rev 0; 7/97 Qua d/Dua l, Low -Volt a ge , Bidire c t iona l RF/Vide o Sw it c he s _Applic a t ions _Fe a t ure s ♦ High 50Ω Off Isolation: -83dB at 10MHz ♦ Low 50Ω Crosstalk: -87dB at 10MHz


    Original     		-83dB 10MHz -87dB 350MHz 100MHz DG540, DG542, DG643 PDF

    Untitled

    Abstract: No abstract text available
    Text: ykiyjxivki 19-1252; Rev 0; 7/97 Quad/ Dual , L o w - V o l t a g e , B i d i r e c t i o n a l RF/ Vi deo S w i t c h e s _F e a t u r e s ♦ High 50Q Off Isolation: -83dB at 10MHz ♦ Low 50£2 Crosstalk: -87dB at 10MHz ♦ DC to 350MHz -3dB Signal Bandwidth


    OCR Scan     		-83dB 10MHz -87dB 350MHz 10MHz. PDF

    LTC3010

    Abstract: fast photodiode amplifier LTC5508 LT1568 LT1950 LT3010 LT6700-1 LT6700-2 LT6700-3 "power sourcing equipment"
    Text: LINEAR TECHNOLOGY JUNE 2003 IN THIS ISSUE… COVER ARTICLE Versatile, Low Noise, Active Filter Offers Repeatable Performance to 10MHz .1 by Nello Sevastopoulos Issue Highlights .2 LTC in the News .2


    Original     		10MHz 12-Bit D-85737 D-59387 D-70567 S-191 LTC3010 fast photodiode amplifier LTC5508 LT1568 LT1950 LT3010 LT6700-1 LT6700-2 LT6700-3 "power sourcing equipment" PDF

    AUTOMATIC FAN SPEED CONTROL METHOD

    Abstract: LM75 SSC050 SSC100 VSC055 VSC7122 X24C16 5 pins pulse width modulation controller
    Text: VSC055 Enhanced I2C Backplane Controller Product Brief Overview • Two clock input ranges: 8 to 10MHz crystal or 8.0 to 53.125MHz (oscillator) • Automatic synchronization control between multiple devices • Selectable direct LED drive flashing capability


    Original     		VSC055 10MHz 125MHz VSC055 SSC100/200/VSC205/210 1-800-VITESSE AUTOMATIC FAN SPEED CONTROL METHOD LM75 SSC050 SSC100 VSC7122 X24C16 5 pins pulse width modulation controller PDF

    D103

    Abstract: D104 D107 F100 MAX4130 MAX4132 MAX4134 3e10
    Text: * MAX4130 FAMILY MACROMODELS * -* FEATURES: * 10MHz Gain Bandwidth Product * 900uA Typical Supply Current * Drive 250 Ohm Loads * Unity-Gain Stable * Rail-to-Rail I/O * Available in 5-Pin SOT23-5 MAX4130 * 8-Pin SO/uMAX (MAX4132) *


    Original     		MAX4130 10MHz 900uA OT23-5 MAX4130) MAX4132) 14-Pin MAX4134) MAX4130 10MHz, D103 D104 D107 F100 MAX4132 MAX4134 3e10 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-1232;Rev0;6/97 > k l X X I > k l Quad/Dual, Low- Voltage, Bidirectional RF/Video Sw itches Genera! Description Features ♦ Low 50£2 Insertion Loss: -1dB at 100MHz ♦ High 50Q Off Isolation: -80dB at 10MHz


    OCR Scan     		100MHz -80dB 10MHz 300MHz DG540, DG542, DG6430 PDF

    ultrasonic piezoelectric transducer driver

    Abstract: ultrasonic piezoelectric 10MHz power supply 220v 12v diagram sonar tr switch ultrasonic transducer circuit ultrasound transducer circuit driver "Piezoelectric transducer" ultrasonic MHZ ULTRASONIC transducers Ultrasonic FLOW Transducer function of logic pulser
    Text: Supertex inc. HV739 High Speed ±100V 3.0A Ultrasound Pulser Features HVCMOS technology for high performance High density integration ultrasound transmitter Bipolar ±100V or unipolar 0 to 200V output voltage ±3.0A source and sink peak current Up to 10MHz operation frequency


    Original     		HV739 10MHz HV739 DSFP-HV739 B052710 ultrasonic piezoelectric transducer driver ultrasonic piezoelectric 10MHz power supply 220v 12v diagram sonar tr switch ultrasonic transducer circuit ultrasound transducer circuit driver "Piezoelectric transducer" ultrasonic MHZ ULTRASONIC transducers Ultrasonic FLOW Transducer function of logic pulser PDF

    Untitled

    Abstract: No abstract text available
    Text: OPA 6 OPA 6 OPA640 40 40 Wideband Voltage Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● UNITY-GAIN BANDWIDTH: 1.3GHz ● UNITY-GAIN STABLE ● COMMUNICATIONS ● MEDICAL IMAGING ● LOW NOISE: 2.9nV/√Hz ● LOW HARMONICS: –75dBc at 10MHz


    Original     		OPA640 75dBc 10MHz OPA640 PDF

    Untitled

    Abstract: No abstract text available
    Text: OPA640 OPA 640 OPA 640 Wideband Voltage Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● UNITY-GAIN BANDWIDTH: 1.3GHz ● UNITY-GAIN STABLE ● COMMUNICATIONS ● MEDICAL IMAGING ● LOW NOISE: 2.9nV/√Hz ● LOW HARMONICS: –75dBc at 10MHz ● HIGH COMMON MODE REJECTION: 85dB


    Original     		OPA640 75dBc 10MHz OPA640 UAF42 SBFC001, SLVC003A, SBOM102, PDF

    DEM-OPA64X

    Abstract: OPA640 OPA640P OPA640U OPA640UB
    Text: OPA640 OPA 640 OPA 640 Wideband Voltage Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● UNITY-GAIN BANDWIDTH: 1.3GHz ● UNITY-GAIN STABLE ● COMMUNICATIONS ● MEDICAL IMAGING ● LOW NOISE: 2.9nV/√Hz ● LOW HARMONICS: –75dBc at 10MHz ● HIGH COMMON MODE REJECTION: 85dB


    Original     		OPA640 75dBc 10MHz OPA640 DEM-OPA64X OPA640P OPA640U OPA640UB PDF

    Untitled

    Abstract: No abstract text available
    Text: OPA640 OPA 640 OPA 640 Wideband Voltage Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● UNITY-GAIN BANDWIDTH: 1.3GHz ● UNITY-GAIN STABLE ● COMMUNICATIONS ● MEDICAL IMAGING ● LOW NOISE: 2.9nV/√Hz ● LOW HARMONICS: –75dBc at 10MHz ● HIGH COMMON MODE REJECTION: 85dB


    Original     		OPA640 75dBc 10MHz OPA640 PDF

    DEM-OPA64X

    Abstract: OPA640 OPA640P OPA640U OPA640UB
    Text: OPA640 OPA 640 OPA 640 Wideband Voltage Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● UNITY-GAIN BANDWIDTH: 1.3GHz ● UNITY-GAIN STABLE ● COMMUNICATIONS ● MEDICAL IMAGING ● LOW NOISE: 2.9nV/√Hz ● LOW HARMONICS: –75dBc at 10MHz ● HIGH COMMON MODE REJECTION: 85dB


    Original     		OPA640 75dBc 10MHz OPA640 DEM-OPA64X OPA640P OPA640U OPA640UB PDF

    Untitled

    Abstract: No abstract text available
    Text: B U R R -B R O W N H OPA64Q H Wideband Voltage Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • UNITY-GAIN BANDWIDTH: 1.3GHz • UNITY-GAIN STABLE • LOW NOISE: 2.9nV/VHz • COMMUNICATIONS • MEDICAL IMAGING • TEST EQUIPMENT • LOW HARMONICS: -75dBc at 10MHz


    OCR Scan     		OPA64Q -75dBc 10MHz 50V/jas OPA640 PDF

    Untitled

    Abstract: No abstract text available
    Text: B U R R -B R O W N OPA64Q Wideband Voltage Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • • UNITY-GAIN BANDWIDTH: 1.3GHz UNITY-GAIN STABLE LOW NOISE: 2.9nV/VHz LOW HARMONICS: -75dBc at 10MHz


    OCR Scan     		OPA64Q -75dBc 10MHz OPA640 17313bS 0027S22 PDF

    Untitled

    Abstract: No abstract text available
    Text: 19-1232; Rev 0; 6/97 Qua d/Dua l, Low -Volt a ge , Bidire c t iona l RF/Vide o Sw it c he s _Fe a t ure s _Applic a t ions ♦ Low 50Ω Insertion Loss: -1dB at 100MHz ♦ High 50Ω Off Isolation: -80dB at 10MHz


    Original     		100MHz -80dB 10MHz 300MHz DG540, DG542, DG643 PDF

    Cree Microwave

    Abstract: UGF21090 UGF21090F UGF21090P
    Text: UGF21090 90W, 2.17GHz, 26V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency UMTS band from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM single and Multi-Carrier power amplifiers


    Original     		UGF21090 17GHz, 2135MHz, 2145MHz f1-10MHz 10MHz) 100uthorized UGF21090 Cree Microwave UGF21090F UGF21090P PDF

    Cree Microwave

    Abstract: UGF21060 UGF21060F UGF21060P
    Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class


    Original     		UGF21060 17GHz, MRF21060/MRF21060S. UGF21060 Cree Microwave UGF21060F UGF21060P PDF

    50 watts amplifier 10mhz

    Abstract: 10mhz mosfet Cree Microwave UGF19125 UGF19125F UGF19125P
    Text: UGF19125 125W, 2.0 GHz, 26V, Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at frequency bands from 1.9 to 2.0 GHz. Suitable for TDMA, N-CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class AB


    Original     		UGF19125 MRF19125/MRF19125S. UGF19125 50 watts amplifier 10mhz 10mhz mosfet Cree Microwave UGF19125F UGF19125P PDF