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    10N12L Search Results

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    10N12L Price and Stock

    Panduit Corp U10N12L

    SMARTZONE UPS, 10KVA, LI, 230V,
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    DigiKey U10N12L Bulk
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    Rochester Electronics LLC RFP10N12L

    N-CHANNEL POWER MOSFET
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    DigiKey RFP10N12L Bulk 258
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    • 1000 $1.16
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    Harris Semiconductor RFP10N12L

    10A, 120V, 0.3ohm, N-Channel, MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics RFP10N12L 54,904 1
    • 1 $1.12
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    • 100 $1.05
    • 1000 $0.952
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    10N12L Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10N12L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    10N12L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    10N12L Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TP10N15L

    Abstract: 10N12L 10N15L TO-220AB Package P10N15L TP10N12L TP10N12 158SC
    Text: MOTOROLA SC IME D XSTRS/R F I fc.3 t,?a54 QG1 QD3 ci 0 1 7V 3 7 -1 / MOTOROLA • SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L MTP10IM12L M T P 10N 15L Designer's Data Sheet Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate TMOS


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    1X440 TQ-204AA 21A-04 O-220AB TP10N15L 10N12L 10N15L TO-220AB Package P10N15L TP10N12L TP10N12 158SC PDF

    MTP8P20

    Abstract: MTP10N10M MTP8N18 MTP7N18 MTP7N20 MTP7P05 MTP7P06 MTP8N08 MTP8N10 MTP8N12
    Text: M € f Ä * Vds or Vd g tí: « A V * £ fê (Ta=25^C) Vg s (V) Id Po * /CH * /CH Ig s s m (A) % S V g s (th) Id s s (nA) Vg s (V) Vd s (V) <UA) Id (nA) (V) (V) fê ÎDs(on) V:r>s= Vg s max min ft '14 CTa=25cC ) ÌD(on) Ciss g fs Coss ft Crss V g s =0 (max)


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    MTP7N18 T0-220AB MTP7N20 O-220AB MTP7P05 MTP7P06 MTP10NI5 MTP8P20 MTP10N10M MTP8N18 MTP8N08 MTP8N10 MTP8N12 PDF

    10N15L

    Abstract: P10N15L RFP10N12L
    Text: R F M 1 0 N 1 2 L /1 5 L R F P 1 0 N 1 2 L /1 5 L gì h a r r is N - C h a n n e l L o g ic Level P o w e r F ie l d - E f f e c t T r a n s is to r s L 2 F ET August 1991 Package F e a tu re s T O -2 0 4 A A • 10A, 120V and 150V BOTTOM VIEW • rDS(0N) = 0 .3 fl


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    FP10N12L AN7254 AN-7260. 92CS-3BI64 10N15L P10N15L RFP10N12L PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


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    VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    10N15L

    Abstract: 10N12L mtp10n12 MTM10N15L p10n15l
    Text: MOTOROLA • i SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L M T P 10N 12L M T P 10N 15L Designer's Data Sheet P o w er Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S T h e s e L o g ic L e ve l T M O S P o w e r FETs a re d e s ig n e d fo r h ig h


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    21A-04 O-220AB 10N15L 10N12L mtp10n12 MTM10N15L p10n15l PDF

    10N15L

    Abstract: No abstract text available
    Text: 4302271 QDS 4 7 5 5 T4 1 • HAS R FM 10 N 12L /15L R FP10N 12L /15L H a r r is N-Channel Logic Level Power Field-Effect Transistors L^FET August 1991 Features Package T 0 -2 0 4 A A BOTTOM VIEW • 10A, 120V and 150V • rDS(ON) = 0-3H SOURCE f • Design Optimized for 5V Gate Drives


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    FP10N RFM10N12L RFM10N15L RFP10N12L 10N12L, 10N15L, RFP10N12L, RFP10N15L 92CS-376S4 AN7254 10N15L PDF