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    10N60C Search Results

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    10N60C Price and Stock

    Rochester Electronics LLC FQA10N60C

    MOSFET N-CH 600V 10A TO3P
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    onsemi FQA10N60C

    MOSFET N-CH 600V 10A TO3P
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    Flip Electronics FQPF10N60C

    MOSFET N-CH 600V 9.5A TO220F
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    onsemi FQPF10N60C

    MOSFET N-CH 600V 9.5A TO220F
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    Avnet Americas FQPF10N60C Tube 0 Weeks, 2 Days 278
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    Alpha & Omega Semiconductor AOWF10N60C

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    DigiKey AOWF10N60C Reel 1,000
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    10N60C Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    10N60C5M IXYS CoolMOS Power MOSFET Original PDF

    10N60C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 AB D G D S G S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		PDF 10N60C5 O-220

    10N60C

    Abstract: IXKP10N60C5
    Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


    Original     		PDF 10N60C5 O-220 20080523b 10N60C IXKP10N60C5

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 10N60C5M O-220 20090209d

    10N60C

    Abstract: GS54
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET


    Original     		PDF 10N60C5M O-220 20070704a9 10N60C GS54

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5 COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


    Original     		PDF 10N60C5 O-220 20080310a

    10N60C

    Abstract: c16tj 10N60C5M
    Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 10N60C5M O-220 20080523c 10N60C c16tj 10N60C5M

    10N60C

    Abstract: No abstract text available
    Text: IXKP 10N60C5 Advanced Technical Information ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		PDF 10N60C5 O-220 10N60C

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5M COOLMOS * Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 10N60C5M O-220 20080310b

    Untitled

    Abstract: No abstract text available
    Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings


    Original     		PDF 10N60C5 O-220 20090209c

    10N60C5M

    Abstract: kw0649 IGBT GS c16tj 10N60C
    Text: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET Conditions


    Original     		PDF 10N60C5M O-220 10N60C5M kw0649 IGBT GS c16tj 10N60C

    10N60C

    Abstract: C3525
    Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET


    Original     		PDF 10N60C5M O-220 10N60C C3525

    10N60C

    Abstract: No abstract text available
    Text: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Conditions VDSS TVJ = 25°C


    Original     		PDF 10N60C5 O-220 10N60C

    10N60C

    Abstract: 10N60C5M
    Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions


    Original     		PDF 10N60C5M O-220 20090209d 10N60C 10N60C5M

    10N60C

    Abstract: No abstract text available
    Text: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS


    Original     		PDF 10N60C5 O-220 20090209c 10N60C

    10N60CT

    Abstract: 10N60C FQPF10N60CT FQPF Series fqpf10n60c FQPF10N60C FQPF Series FQPF 10N60 FQP10N60C
    Text: QFET 10N60C / 10N60C 600V N-Channel MOSFET Features Description • 9.5A, 600V, RDS on = 0.73Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FQP10N60C FQPF10N60C FQPF10N60C FQPF10N60CT 10N60CT 10N60C FQPF Series fqpf10n60c FQPF Series FQPF 10N60

    10N60C

    Abstract: No abstract text available
    Text: TM 10N60C / 10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB10N60C FQI10N60C 10Fairchild FQB10N60CTM 10N60C

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		PDF MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2

    10N60C

    Abstract: No abstract text available
    Text: TM 10N60C / 10N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB10N60C FQI10N60C 10Fairchild FQI10N60C FQI10N60CTU 10N60C