Untitled
Abstract: No abstract text available
Text: <$£mi-Conc[uckoi ^Pr , inc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 Amplifier Transistor MPS6530 NPN Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS TO-92 Symbol Value Unit Collector- Emitter Voltage
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MPS6530
10mAdc,
10Vdc,
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MRF284
Abstract: No abstract text available
Text: <z/V.e.txr ZPioauati, {Jna. tj 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Advance Information The RF Sub-Micron MOSFET Line MRF284S RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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MRF284S
MRF284
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Untitled
Abstract: No abstract text available
Text: g M OTOROLA M C3346 General Purpose Transistor Array One D ifferentially Connected Pair and Three Isolated Transistor Arrays GENERAL PURPOSE TRANSISTOR ARRAY The MC3346 is designed for general purpose, low power applications for consumer and industrial designs.
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C3346
MC3346
SO-14)
ti3b7253
0GT8252
MC3346
b3b72S3
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DKV3803-30
Abstract: DKV6520 adkv LA 6520 DKV6520-06 DKV6520-12 DKV6525-06 DKV6525-12 dkv3803-23 DKV6522-24
Text: Silicon Hyperabrupt Tuning Diodes DKV6520 Series ALPHA IN] / S E M I C O N D U C T O R 4fiE D 05Ô5443 Q Q D 1 3 n ITI IALP Features • ■ ■ ■ High to Very High Frequency Operation Capacitance Values of 20 pF to 200 pF at 4 Volts Octave Tuning from 4 to 20 Volts
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DKV6520
CKV2020
DKV3801
DKV3802
DKV3803
DKV3804
QQD13n
DKV3802-26
DKV3802-27
DKV3803-30
adkv
LA 6520
DKV6520-06
DKV6520-12
DKV6525-06
DKV6525-12
dkv3803-23
DKV6522-24
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CA3146P
Abstract: No abstract text available
Text: MOTOROLA _ _ SEMICONDUCTOR CA3146 TECHNICAL DATA General Purpose Transistor Array GENERAL PURPOSE TRANSISTOR ARRAY One Differentially Connected Pair and Three Isolated Transistor Arrays SILICON M O NOLITHIC IN T E G R A T E D CIRCUIT T he C A 3 1 46 is designed for general purpose, low power applications in the
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CA3146
CA3146P
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PDF
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MPSH81
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA RF A m plifier Transistor PNP Silicon MPSH81 COLLECTOR Motorola Preferred Device 3 1 BASE 2 EMITTER M AXIMUM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO -20 Vdc Collector-Base Voltage VCBO -20 Vdc Emitter-Base Voltage
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MPSH81
3b72S5
0DR3443
b3b7255
MPSH81
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PDF
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TO-226-AE
Abstract: No abstract text available
Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA TM O S Sw itching N -C h a n n e l — Enhancem ent MPF930 MPF960 MPF990 3 DRAIN M A X IM U M R A T IN G S Symbol MPF930 MPF960 MPF990 Unit Drain-Source Voltage VD S 35 60 90 Vdc Drain-Gate Voltage V DG 35 60 90 Vdc
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MPF930
MPF960
MPF990
MPF990
O-226AE)
GCH37S7
TO-226-AE
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MPQ3725/D SEMICONDUCTOR TECHNICAL DATA Quad Core Driver Transistor MPQ3725 NPN Silicon nil nil raí nil nói mm IvM M otorola Preferred D evice L>^J rvi NPN rvi LU l L i lL i LU LÌJ LsJ ill MAXIMUM RATINGS Rating Collector- Emitter Voltage
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MPQ3725/D
MPQ3725
O-116
PQ3725
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Motorola Transistor 3-252
Abstract: Motorola 3-252
Text: 4bE D • b3b72S4 QORHTHfl 3 ■ nOTf'FZl-Cft MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR) TECHNICAL DATA 2C3251AHV Chip PNP Silicon Small-Signal Transistor A IM »#####/ . .designed for dc to VHF amplifier and general-purpose switching applications. DiSCr&t&
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b3b72S4
2C3251AHV
unlX10-4
T-27-09
2C3251AHY
Motorola Transistor 3-252
Motorola 3-252
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV3102LT1/D SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 S ilic o n Tuning D iode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid-state reliability in replacement of mechanical
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MMBV3102LT1/D
MMBV3102LT1
OT-23
O-236AB)
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor BCW65ALT1 NPN Silicon CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Symbol Value Unit C ollector-Em itter Voltage VCEO 32 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-B ase Voltage
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BCW65ALT1
OT-23
O-236AB)
150i2)
b3b72SS
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor PNP Silicon P2N2907A BASE MAXIMUM RATINGS Rating Sym bol Value Unit C olle cto r- Emitter Voltage v CEO -6 0 Vdc C ollector-B ase Voltage VCBO -6 0 Vdc E m itter-B ase Voltage Ve b o -5 .0 Vdc Collector Current — Continuous
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P2N2907A
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MPQ6600A1
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Complementary Pair Transistors MPQ6100A MPQ6600A1* NPN/PNP Silicon ¡y. „ryi li l l i l li Lu ill ill ill MPQ6100A TYPE A ra ra ipi«i Ri m m Iv Y I Voltage and Current are negative for PNP Transistors ‘ M o to rola Preferred D ev ice
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MPQ6100A
MPQ6600A1*
MPQ6600A1
O-116
MPQ6600A1
PQ6100A
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PDF
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LTZM
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistor NPN Silicon M PS3904 COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Symbol Value Unit C ollector-Em itter Voltage VCEO 40 Vdc C ollector-Base Voltage VCBO 60 Vdc E m itter-Base Voltage Rating v EBO 6.0
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PS3904
O-226AA)
b3b72SS
LTZM
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT751T1 PNP Silicon Planar Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the S O T -223 package which is designed for
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PZT751T1
PZT751T1
b3b72SS
J3S70
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Low Voltage Output A m plifier Surface Mount MSD1328-RT1 Motorola Preferred Device COLLECTOR n □ nr 2 1 BASE EMITTER M AXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector-Base Voltage v (BR)CBO 25 Vdc
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MSD1328-RT1
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DO-14
Abstract: KV2301 kv2501 V270l KV2201 KV2604 KV2001 KV2002 KV2202 KV2302
Text: LO RA L n i C R O U A V E - F S I 0 0 0 0 4 4 1 5T3 s s a o ia o S1E D TU • I ■ g ■I "r 07- VHF HYPERABRUPT TUNING VARACTORS DESCRIPTION VHF Diodes: Ion-implanted, highly reproducible hyperabrupt diodes which allow octave tuning of LC tanks up to 500 MHz or, with a reduced 1.5 to 1 frequency ratio,
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5sa0i30
V270l
0Q00M43
KV2001
-KV2201
KV2301
KV2401
KV2501
KV2601
KV2701
DO-14
kv2501
V270l
KV2201
KV2604
KV2001
KV2002
KV2202
KV2302
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PDF
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PQ3904
Abstract: Transistor 3904 motorola mpq3904
Text: MOTOROLA Order this document by MPQ3904/D SEMICONDUCTOR TECHNICAL DATA Quad A m p lifier Sw itching Transistor M PQ 3904 NPN Silicon Motorola Preferred Device [Ï4] fill pél Rii lió] m m u \\ [T U ' NPN rvH rvi LU LU LU LU LU LU LU MAXIMUM RATINGS 14 Rating
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MPQ3904/D
PQ3904
Transistor 3904
motorola mpq3904
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MBT5551LT1
Abstract: MBT5551L T0236AB
Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA High V oltage T ransistors NPN Silicon MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 ‘M otorola Preferred D evice 2 MAXIMUM RATINGS EMITTER Symbol Value Unit Collector-Emitter Voltage Rating v C EO 140 Vdc Collector-Base Voltage
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MMBT5550LT1
MMBT5551LT1*
T0-236AB)
225rola
MBT5550LT1
MBT5551LT1
1N914
MBT5551LT1
MBT5551L
T0236AB
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PDF
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RIM-IDC24M
Abstract: RIM-IDC24 RIM-IAC15AM RIM-IAC15M RIM-IAC5M RIM-IDC5M rim-idc5 30VDC 90VRMS
Text: RIM Series Features • • • • • 4KV Optical Isolation Slimline packaging Plugs into standard I/O module mounting board Industry standard color code AC=Yellow, DC=White AC & DC Types Slimline Input Digital Modules D47 | * - 1.700(43.18) »| Case Colors:
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90Vrms
RIM-IAC15M
140Vrms
IAC24M
180Vrms
280Vrms
RIM-IAC15AM
RIM-IDC24M
RIM-IDC24
RIM-IAC5M
RIM-IDC5M
rim-idc5
30VDC
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PDF
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MPQ6600A1
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Com plem entary Pair Transistors NPN/PNP Silicon MPQ6100A M PQ6600A1* LAJ L rv l rv i [V I MPQ6100A TYPE A r»i [Ï3i nu im lioi rn m Voltage and Current are negative for PNP Transistors ’ Motorola Preferred Device
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MPQ6100A
PQ6600A1*
MPQ6600A1
OQ6600A1
b3b7255
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PDF
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2N6724
Abstract: 2N6725 MPS8724
Text: 2N6724/MPS6724/2N6725/MPS6725 National Semiconductor 2N6724 2N6725 MPS6724 MPS6725 NPN Darlington Transistor Electrical Characteristics t a = 25°C unless otherwise noted Parameter Symbol Min Max Units OFF CHARACTERISTICS V BR CES v (BR)CBO V(BR)EBO 'CBO 'e bo
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2N6724/MPS6724/2N6725/MPS6725
2N6724
2N6725
MPS6724
MPS6725
10nAdc
2N6724/MPS6724
2N6725/MPS6725
2N6724/MPS8724
2N6725/MPS6725
2N6725
MPS8724
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PDF
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md2219AFHXV
Abstract: No abstract text available
Text: MD2219AFHXV . CRYSTALONCS , 280S Veterans Highway NPN Silicon Dual Small-Signal Transistors su ite u Ronkonkoma. m y. 1 1779 . . designed for general-purpose switching and amplifier applications. M A X IM U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage
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MD2219AFHXV
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PDF
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sot-223 body marking D K Q F
Abstract: No abstract text available
Text: Order this data sheet by BSP62T1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP62T1 PNP Silicon Epitaxial Transistor Motorola Preferred Device This PNP small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The device is housed in the
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BSP62T1/D
OT-223
BSP62T1
inch/1000
BSP62T3
inch/4000
BSP52
BSP62T1
2PHX31198F-0
sot-223 body marking D K Q F
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