SI-1125HD equivalent
Abstract: mosfet 257A
Text: Radiation Hardened MOSFET Nomenclature System xxxx FR HARRIS RADIATION HARDENED POWER MOSFET L J PACKAGE DESIGNATION — RELIABILITY SCREENING LEVEL 1 - Non-TX Com m ençai 2 - T X Equivalent of M IL-S -19500 3 - T X V Equivalent of M IL-S -19500 4 - Space Equivalent of M IL-S -19500
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-204A
-254A
-257A
-258AA
10kRAD
10OOkRAD
MIL-S-19500,
MIL-S-19500.
SI-1125HD equivalent
mosfet 257A
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n 4111
Abstract: N channel Mosfet 15A 500V
Text: CSJ H a r r i s U U I S E M I C O N D U C T O R FRE264D, FRE264R, FfíE2G4H 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 250V, RDS on = 0.1300 TO-256AA • Second Generation Rad Hard MOSFET Results From New Design Concept*
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FRE264D,
FRE264R,
O-256AA
100KRAD
300KRAD
1000KRAD
3000KRAD
FRE264H
n 4111
N channel Mosfet 15A 500V
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C500D
Abstract: 1553B MA3690 MA3691 IS001 Marconi radiation hard mil 1553b
Text: Marconi MA3690/1_ Radiation Hard 1553B Bus Controller/ Remote Term inal Electronic Devices FEATURES • Radiation Hard to 1 MRads Si A unique mechanism has been incorporated that allow s the subsystem to declare illegal co m m an d s le g a l, and
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MA3690/1_
1553B
MA3690/1
Commercial-55
C500D
MA3690
MA3691
IS001
Marconi radiation hard
mil 1553b
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C458D
Abstract: MAS281 Marconi Electronic Devices MARCONI ELECTRONIC MA28155 MAS281 mil-std-1750a microprocessor radiation hard Marconi radiation hard PA7DS
Text: Marconi Electronic Devices FEATURES • • • • • Radiation Hard to 1 MRad Si High SEU immunity, latch up free Silicon-on-Sapphire technology 24 Programmable I/O Pins All inputs & outputs are TTL Com patible • Direct Bit Set/Reset Capability Easing
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MAS281
MA28155_
MA28155
C458D
MAS281 Marconi Electronic Devices
MARCONI ELECTRONIC
mil-std-1750a
microprocessor radiation hard
Marconi radiation hard
PA7DS
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Untitled
Abstract: No abstract text available
Text: 3Q HARRIS S E M I C O N D U C T O R FRM230D, FRM230R, FRM230H 8A, 200V, 0.50 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 8A, 200V, RDS on = 0.50Q TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts Gamma
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FRM230D,
FRM230R,
FRM230H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
AN-8831,
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Untitled
Abstract: No abstract text available
Text: I 1/ V R R I 15 FRS230D, FRS230R, S E M I C O N D U C T O R 7A, 200V, 0.515 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 7A, 200V, RDS on = 0.515£2 TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma
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FRS230D,
FRS230R,
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
30UIS
SS30PH0T0
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Untitled
Abstract: No abstract text available
Text: i l l H a r r i s U Ü SEMICONDUCTOR FRS140D, FRS140R, FRS 140H 17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17At 100V, RDS on = 0.1450 TO-257AA * Second Generation Rad Hard MOSFET Result* From New Design Concepts
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FRS140D,
FRS140R,
O-257AA
100KRAD
300KRAD
1000KRAD
3000KRAD
FRS140H
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Untitled
Abstract: No abstract text available
Text: m a r r is 2N7280D, 2N7280R S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRM430 D, R, H November 1994 1 ^ 7 2 R a d iatio n H a rd e n e d N -C h a n n e l P o w e r M O S FE Ts Package Features • 3A, 500V, RDS(on) = 2.50ft TO-204AA
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2N7280D,
2N7280R
FRM430
100KRAD
300KRAD
1000KRAD
3000KRAD
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Untitled
Abstract: No abstract text available
Text: HARRIS S E M I C O N D U C T O R FRM9130D, FRM9130R, FRM9130H 6A, -100V, 0.550 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Package Features • 6A, -100V, RDS on = 0.5500 TO-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRM9130D,
FRM9130R,
FRM9130H
-100V,
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
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2N7324D
Abstract: No abstract text available
Text: hHARRis 2N7324D, 2N7324R, S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRM9250 D, R, H 1 ^ 7 3 2 4 H Radiation Hardened P-Channel Power M OSFETs April 1996 Package Features • 16A, -200V, RDS(on) = 0 .3 0 0 Q TO-2Q4AA • Second Generation Rad Hard M O SFET Results From New Design Concepts
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2N7324D,
2N7324R,
FRM9250
-200V,
100KRAD
300KRAD
1000KRAD
3000K
1-800-4-HARR
2N7324D
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transistor 257A
Abstract: mosfet 257A
Text: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS240 D, R, H 2N7286D, 2N7286R 2N7286H Radiation Hardened N-Channel Power MOSFETs November 1994 Package Features • 12A, 200V, RDS(on) = 0.255ft TO-257A A • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRS240
2N7286D,
2N7286R
2N7286H
O-257A
255ft
10OKRAD
300KRAD
1000KRAD
Useto3000KRAD
transistor 257A
mosfet 257A
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shbb
Abstract: T11G
Text: HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS140 D, R, H November 1994 2N7284D, 2N7284R 2N7284H R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Features Package • 17A, 100V, RDS(on) = 0.145Q TO-257AA
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FRS140
2N7284D,
2N7284R
2N7284H
O-257AA
100KRAD
300KRAD
10OOKRAD
3000KRAD
O-257AA
shbb
T11G
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R3254
Abstract: No abstract text available
Text: FRS140D, FRS140R, FRS140H 17A, 100V, 0.145 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 17A, 100V, RDS on = 0.145S1 TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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FRS140D,
FRS140R,
FRS140H
O-257AA
145S1
100KRAD
300KRAD
1000KRAD
3000KRAD
MIL-S-19500
R3254
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Untitled
Abstract: No abstract text available
Text: íH HARRIS S E M I C O N D U C T O R FRS9230D, FRS9230R, FRS9230H 4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Package Features • 4A.-200V, RDS on = 1.32Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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FRS9230D,
FRS9230R,
FRS9230H
-200V,
O-257AA
100KRAD
300KRAD
10OOKRAD
3000KRAD
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