Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1432 International IQ R Rectifier \ dv/dt R A T E D HEXFET* TRANSISTOR R E P E T IT IV E A V A L A N C H E A N D IRHNA7264SE N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.1100, (SEE) RAD HARD HEXFET
|
OCR Scan
|
IRHNA7264SE
250Volt,
3150utram
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International IOR Rectifier Pro, *. dv/dt R ATED HEXFET TRANSISTOR R E P E T IT IV E A V A L A N C H E A N D IRH N A7264SE N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 250Volt, 0.11 on, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology
|
OCR Scan
|
A7264SE
250Volt,
California90245,
S54S2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International \IQR}Rectifier Provisional Datasheet No. PD-9.1397 REPETITIVE AVALANCHE AND dv/dt RATED IR H N A7260 IR H N A 8260 HEXFET T R A N S IS T O R N-CHANNEL MEGA RAD HARD 200 Volt, 0.070Q, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology
|
OCR Scan
|
A7260
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1252C International I R Rectifier IRHM2C50SE IRHM7C50SE R E P E T IT IV E A V A L A N C H E AN D dv/dt R A T E D HEXFET TRANSISTOR N -CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 600Volt, 0.60Q, (SEE) RAD HARD HEXFET
|
OCR Scan
|
1252C
IRHM2C50SE
IRHM7C50SE
600Volt,
554S2
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1447 International IQR Rectifier IRHNA9064 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR Pa-W M SB_ RAO HARD -60Volt, 0.055Q, RAD HARD HEXFET International Rectifier's P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability
|
OCR Scan
|
IRHNA9064
-60Volt,
10sRads
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1433 International IO R Rectifier REPETITIVE AVALANCHE AND dv/dtRATED IRHNA9160 H EX FET* T R A N S IS T O R P -C H A N N E L RAD HARD -lOOUott, 0.0870, RAD HARD HEXFET International R ectifier* P-Channel RAD HARD technology
|
OCR Scan
|
IRHNA9160
|
PDF
|
Untitled
Abstract: No abstract text available
Text: International S Rectifier Provisional Data Sheet No. PD-9.1391 IRH9230 AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTOR p -c h a n n e l RAD HARD Product Summary -200 Volt, 0.8Q, RAD HARD HEXFET International Rectifier’s P-Channel RAD HARD technology
|
OCR Scan
|
IRH9230
4SS5455
|
PDF
|
hc 7400
Abstract: No abstract text available
Text: htemational \tq r ]Rectifier Provisional Data Sheet No. PD-9.1416 IRHNA7064 IRHNA8064 R E P E T IT IV E A V A L A N C H E AN D dv/dt R A T E D HEXFET*TRANSISTOR N -C H A N N E L M EG A RAD HARD 60 Volt, 0.0150, MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology
|
OCR Scan
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ÊE MAR December 1992 HS-82C55A RH Radiation Hardened CMOS Programmable Peripheral Interface Pinout Features 40 PIN DIP CASE OUTUNE D-5, CONFIGURATION 3 TOP VIEW • Radiation Hardened - Total Dose >10s RAD Si - Transient Upset <108 RAD(Siys PAJ [7 -yj-PA2 (T
|
OCR Scan
|
10sRAD
HS-82C55A
82C55A
HS80C86RH
82C55A
|
PDF
|