Untitled
Abstract: No abstract text available
Text: HAT1026R Silicon P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline SOP-8 5 6 7 8 D D D D 1 ,2 ,3 Source 4 Gate 5, 6, 7, 8 Drain 1 2
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HAT1026R
ADE-208-457
MS-012AA
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NMOS-2
Abstract: No abstract text available
Text: HAT1031T Silicon P-Channel Power MOS FET High Speed Power Switching HITACHI ADE-208-528C 4th. Edition Features • • • • Low on-resistance Capable of 2.5 V gate drive Low drive current High density mounting Outline TSSOP-8 D o 8 D o 1,8 Drain 2, 3, 6, 7 Source
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HAT1031T
ADE-208-528C
10x413x1
NMOS-2
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Untitled
Abstract: No abstract text available
Text: HAT3004R Silicon N Channel / P Channel Power MOS FET High Speed Power Switching HITACHI Features • • • • Low on-resistance Capable of 4 V gate drive Low drive current High density mounting Outline S O P -8 5 6 1, 3 Source 2 ,4 Gate 5, 6, 7, 8 Drain
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HAT3004R
ADE-208-500
10x413x1
MS-012
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