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Infineon Technologies AG SPP11N80C3XKSA1 MOSFET N-CH 800V 11A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPP11N80C3XKSA1	Tube	3,951		1	1 $3.83 10 $3.83 100 $3.83 1000 $1.34265 10000 $1.32975	Buy Now
Avnet Americas	SPP11N80C3XKSA1	Bulk		16 Weeks, 4 Days	1	1 $2.96 10 $2.87 100 $1.99 1000 $1.42 10000 $1.42	Buy Now
Mouser Electronics	SPP11N80C3XKSA1		3,437			1 $3.26 10 $3.05 100 $1.7 1000 $1.32 10000 $1.32	Buy Now
Newark	SPP11N80C3XKSA1	Bulk	201		1	1 $2.96 10 $2.49 100 $2.01 1000 $1.53 10000 $1.38	Buy Now
Bristol Electronics	SPP11N80C3XKSA1		150			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Rochester Electronics	SPP11N80C3XKSA1		187		1	1 $1.48 10 $1.48 100 $1.39 1000 $1.26 10000 $1.26	Buy Now
Chip1Stop	SPP11N80C3XKSA1	Tube	800			1 $1.26 10 $1.26 100 $1.25 1000 $1.24 10000 $1.24	Buy Now
EBV Elektronik	SPP11N80C3XKSA1		500	16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	SPP11N80C3XKSA1		500		1	1 - 10 - 100 - 1000 $1.77 10000 $1.77	Buy Now
Win Source Electronics	SPP11N80C3XKSA1		9,460			1 - 10 - 100 $1.7714 1000 $1.4857 10000 $1.4857	Buy Now
Infineon Technologies AG SPA11N80C3XKSA1 MOSFET N-CH 800V 11A TO220-FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPA11N80C3XKSA1	Tube	2,433		1	1 $3.85 10 $3.85 100 $3.85 1000 $1.35225 10000 $1.34075	Buy Now
Avnet Americas	SPA11N80C3XKSA1	Bulk		16 Weeks, 3 Days	1	1 $3.55 10 $2.65 100 $1.86 1000 $1.39 10000 $1.39	Buy Now
Mouser Electronics	SPA11N80C3XKSA1		200			1 $3.43 10 $3.29 100 $1.78 1000 $1.34 10000 $1.34	Buy Now
Newark	SPA11N80C3XKSA1	Bulk	626		1	1 $1.16 10 $1.16 100 $1.16 1000 $1.16 10000 $1.16	Buy Now
EBV Elektronik	SPA11N80C3XKSA1			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now

Win Source Electronics	SPA11N80C3XKSA1		12,400			1 - 10 - 100 $1.5675 1000 $1.3146 10000 $1.3146	Buy Now
Infineon Technologies AG SPW11N80C3FKSA1 MOSFET N-CH 800V 11A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPW11N80C3FKSA1	Tube	1,126		1	1 $4.37 10 $4.37 100 $2.42333 1000 $1.67959 10000 $1.59013	Buy Now
Avnet Americas	SPW11N80C3FKSA1	Tube		15 Weeks	240	1 - 10 - 100 $1.49423 1000 $1.47003 10000 $1.47003	Buy Now
Mouser Electronics	SPW11N80C3FKSA1		251			1 $4.1 10 $3.99 100 $1.95 1000 $1.59 10000 $1.59	Buy Now
Newark	SPW11N80C3FKSA1	Bulk	160		1	1 $3.83 10 $3.03 100 $2.14 1000 $1.65 10000 $1.65	Buy Now
	SPW11N80C3FKSA1	Bulk			30	1 - 10 - 100 $2.56 1000 $1.65 10000 $1.65	Buy Now
Rochester Electronics	SPW11N80C3FKSA1		10,435		1	1 $1.75 10 $1.75 100 $1.65 1000 $1.49 10000 $1.49	Buy Now

Chip1Stop	SPW11N80C3FKSA1	Tube	238			1 $2.69 10 $2.26 100 $1.47 1000 $1.47 10000 $1.47	Buy Now
EBV Elektronik	SPW11N80C3FKSA1			16 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPA11N80C3XKSA2 MOSFET N-CH 800V 11A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPA11N80C3XKSA2	Tube	194		1	1 $3.85 10 $3.85 100 $3.85 1000 $1.35225 10000 $1.34075	Buy Now
Avnet Americas	SPA11N80C3XKSA2	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $1.25803 10000 $1.2131	Buy Now
Mouser Electronics	SPA11N80C3XKSA2		387			1 $3.5 10 $3.4 100 $1.69 1000 $1.34 10000 $1.34	Buy Now
Newark	SPA11N80C3XKSA2	Bulk	487		1	1 $3.81 10 $2.91 100 $2.12 1000 $1.65 10000 $1.65	Buy Now
Rochester Electronics	SPA11N80C3XKSA2		33		1	1 $1.49 10 $1.49 100 $1.4 1000 $1.27 10000 $1.27	Buy Now

EBV Elektronik	SPA11N80C3XKSA2			16 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	SPA11N80C3XKSA2		12,500			1 - 10 - 100 $1.4525 1000 $1.1802 10000 $1.1802	Buy Now
Infineon Technologies AG SPA11N80C3XK Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: SPA11N80C3XKSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SPA11N80C3XK	Tube		15 Weeks	500	1 - 10 - 100 - 1000 $1.25803 10000 $1.2131	Buy Now

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11N80C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
11n80c3 Abstract: Q67040-S4440 11n80c SPW11N80C3 80011a 11n80 Text: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated Type 11N80C3 Package P-TO247	Original	PDF	SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 11n80c3 Q67040-S4440 11n80c SPW11N80C3 80011a 11n80
11n80c3 Abstract: SPA11N80C3 Text: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP11N80C3 SPA11N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3
SPA11N80C3 Abstract: No abstract text available Text: 11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated	Original	PDF	SPA11N80C3 P-TO220-3-31 11N80C3 P-TO220-3-31 Q67040-S4439 SPA11N80C3
11n80c3 Abstract: No abstract text available Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPA11N80C3 PG-TO220-3 11N80C3 11n80c3
11N80C3 Abstract: No abstract text available Text: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	PDF	SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4438 11N80C3 11N80C3
MOSFET 11N80c3 Abstract: MOSFET 11N80c3 Data sheet 11N80C3 SPW11N80C3 JESD22 11n80c 1815R Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPW11N80C3 PG-TO247-3 11N80C3 MOSFET 11N80c3 MOSFET 11N80c3 Data sheet 11N80C3 SPW11N80C3 JESD22 11n80c 1815R
MOSFET 11N80c3 Abstract: 11N80 Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPA11N80C3 PG-TO220-3 11N80C3 MOSFET 11N80c3 11N80
Untitled Abstract: No abstract text available Text: 11N80C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated ID 11 A P-TO247 Type Package	Original	PDF	SPW11N80C3 P-TO247 Q67040-S4440 11N80C3
11N80C3 Abstract: 11n80c Text: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4438 11N80C3 11n80c
Q67040-S4440 Abstract: 11N80C3 11N8 Text: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 0.45 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated Type Package Ordering Code Marking	Original	PDF	SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 Q67040-S4440 11N80C3 11N8
11n80c3 Abstract: No abstract text available Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPA11N80C3 PG-TO220-3 11N80C3 11n80c3
11n80c3 Abstract: SPA11N80C3 SPP11N80C3 80011a 11n80c Text: 11N80C3 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3 SPP11N80C3 80011a 11n80c
MOSFET 11N80c3 Abstract: MOSFET 11N80c3 Data sheet 11N80C3 11n80c 11N80 JESD22 SPW11N80C3 PG-TO247 11N8 PG-TO-247-3 Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPW11N80C3 PG-TO247-3 11N80C3 009-134-A O-247 PG-TO247-3 MOSFET 11N80c3 MOSFET 11N80c3 Data sheet 11N80C3 11n80c 11N80 JESD22 SPW11N80C3 PG-TO247 11N8 PG-TO-247-3
11N80C3 Abstract: No abstract text available Text: 11N80C3 11N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	PDF	SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4438 11N80C3

Q67040-S4439 Abstract: No abstract text available Text: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP11N80C3 SPA11N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA11N80C3 11N80C3 11N80C3 Q67040-S4439
MOSFET 11N80c3 Abstract: 11N80C3 SPA11N80C3 11N80 11n80c MOSFET 11N80c3 Data sheet JESD22 Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPA11N80C3 PG-TO220FP 11N80C3 MOSFET 11N80c3 11N80C3 SPA11N80C3 11N80 11n80c MOSFET 11N80c3 Data sheet JESD22
MOSFET 11N80c3 Abstract: 11n80c3 Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPW11N80C3 PG-TO247-3 11N80C3 MOSFET 11N80c3 11n80c3
11n80c Abstract: 11N80C3 SPP11N80C3 max8210 Text: 11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated	Original	PDF	SPP11N80C3 P-TO220-3-1 Q67040-S4438 11N80C3 11n80c 11N80C3 SPP11N80C3 max8210
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	PDF	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	PDF	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265
11N80C3 Abstract: SPW11N80C3 Text: 11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V • Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated ID 11 A P-TO247 Type Package	Original	PDF	SPW11N80C3 P-TO247 Q67040-S4440 11N80C3 11N80C3 SPW11N80C3
11n80c3 Abstract: SPA11N80C3 SPP11N80C3 11N80 SPP11N80 11n80C3 equivalent TO220 HEATSINK DATASHEET PG-TO220-3-31 Text: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP11N80C3 SPA11N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3 SPP11N80C3 11N80 SPP11N80 11n80C3 equivalent TO220 HEATSINK DATASHEET
MOSFET 11N80c3 Abstract: 11N80C3 11n80c 11N80 SPP11N80C3 JESD22 PG-TO220-3 Text: 11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	PDF	SPP11N80C3 PG-TO220-3 11N80C3 MOSFET 11N80c3 11N80C3 11n80c 11N80 SPP11N80C3 JESD22 PG-TO220-3
11N80C3 Abstract: 11n80c SPA11N80C3 3C100 SPP11N80C3 Text: 11N80C3 11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPP11N80C3 SPA11N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA11N80C3 11N80C3 11N80C3 11n80c 3C100

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11N80C Price and Stock

Infineon Technologies AG SPP11N80C3XKSA1

Infineon Technologies AG SPA11N80C3XKSA1

Infineon Technologies AG SPW11N80C3FKSA1

Infineon Technologies AG SPA11N80C3XKSA2

Infineon Technologies AG SPA11N80C3XK

11N80C Datasheets Context Search

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11N80C3

Q67040-S4440

11n80c3

11n80c3

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11N80C3

Q67040-S4439

MOSFET 11N80c3

MOSFET 11N80c3

11n80c

PEF 24628

BCM 4336

11N80C3

11n80c3

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