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    1200G Search Results

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    1200G Price and Stock

    Littelfuse Inc K1200GURP

    SIDAC 110-125V 1A UNI DO-15
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey K1200GURP Cut Tape 3,015 1
    • 1 $1.4
    • 10 $0.944
    • 100 $1.4
    • 1000 $0.49259
    • 10000 $0.4574
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    TTI K1200GURP Reel 5,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.451
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    Ozdisan Elektronik K1200GURP
    • 1 $1.01671
    • 10 $1.01671
    • 100 $1.01671
    • 1000 $1.01671
    • 10000 $0.8841
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    Diotec Semiconductor AG P1200G

    DIODE GEN PURP 400V 12A P600
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey P1200G Cut Tape 1,494 1
    • 1 $1.11
    • 10 $0.692
    • 100 $0.4562
    • 1000 $0.39464
    • 10000 $0.39464
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    P1200G Ammo Pack 1,000 500
    • 1 -
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    • 1000 $0.32552
    • 10000 $0.27142
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    Mouser Electronics P1200G 1,650
    • 1 $0.68
    • 10 $0.57
    • 100 $0.395
    • 1000 $0.305
    • 10000 $0.235
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    Comchip Technology Corporation Ltd CDBDSC51200-G

    DIODE SIL CARBIDE 1.2KV 18A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CDBDSC51200-G Tube 411 1
    • 1 $8.32
    • 10 $8.32
    • 100 $4.27725
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    NAC CDBDSC51200-G 80 1
    • 1 -
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    • 10000 $4.13
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    Comchip Technology Corporation Ltd CDBD2SC21200-G

    DIODE SIL CARB 1.2KV 6.2A TO263
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    DigiKey CDBD2SC21200-G Tube 381 1
    • 1 $4.3
    • 10 $4.3
    • 100 $4.3
    • 1000 $4.3
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    NAC CDBD2SC21200-G Tube 50 1
    • 1 -
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    • 100 $1.84
    • 1000 $1.59
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    Vishay Dale RLR07C1200GSB1423

    RES 120 OHM 2% 1/4W AXIAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey RLR07C1200GSB1423 Bulk 367 1
    • 1 $3.69
    • 10 $2.199
    • 100 $1.3856
    • 1000 $0.99012
    • 10000 $0.99012
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    Find more 1200G price and stock on Findchips.com

    1200G Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1200GXHH22 Toshiba FAST RECOVERY RECTIFIER (HIGH SPEED RECTIFIER APPLICATIONS) Scan PDF
    1200GXHH22 Toshiba FAST RECOVERY RECTIFIER Scan PDF

    1200G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-00 Apr.06 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power


    Original     		PDF 1200G330100 5SYA1563-00 CH-5600

    DO-204AC

    Abstract: GI1-1200GP GI1-1400GP GI1-1600GP
    Text: GI1-1200GP thru GI1-1600GP Vishay Semiconductors New Product formerly General Semiconductor Miniature High Voltage Glass Passivated Rectifier DO-204AC DO-15 Features 0.034 (0.86) 0.028 (0.71) Dia. * d e t n e t a P 1.0 (25.4) min. 0.300 (7.6) 0.230 (5.8)


    Original     		PDF GI1-1200GP GI1-1600GP DO-204AC DO-15) MIL-S-19500 08-Apr-05 DO-204AC GI1-1400GP GI1-1600GP

    DO-204AC

    Abstract: GI1-1200GP GI1-1600GP JESD22-B102 J-STD-002
    Text: GI1-1200GP thru GI1-1600GP Vishay General Semiconductor Miniature High Voltage Glass Passivated Rectifier FEATURES • Superectifier structure for high reliability application • Cavity-free glass-passivated junction d* e t n e Pat • Low forward voltage drop


    Original     		PDF GI1-1200GP GI1-1600GP DO-204AC DO-15) MIL-S-19500 2002/95/EC 2002/96/EC 18-Jul-08 DO-204AC GI1-1600GP JESD22-B102 J-STD-002

    8k83

    Abstract: diode 6.L
    Text: F 1200A . F 1200G .3 Axial leaded diode High efficiency fast silicion rectifier diode F 1200A . F 1200G Forward Current: 12 A Reverse Voltage: 50 to 400 V Preliminary Data Features                 <  =  4


    Original     		PDF 1200G 1200G 8k83 diode 6.L

    5SNA1200G450300

    Abstract: 1200G450300 cosmi
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 PRELIMINARY Doc. No. 5SYA 1401-00 Dec 08 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 1200G450300 CH-5600 5SNA1200G450300 1200G450300 cosmi

    IC 7400 configuration

    Abstract: 5SNA1200G450300
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 Doc. No. 5SYA 1401-01 Mar 09 • Ultra low-loss, rugged SPT+ chip-set • Smooth switching SPT+ chip-set for good EMC • Industry standard package • High power density • AlSiC base-plate for high power


    Original     		PDF 1200G450300 CH-5600 IC 7400 configuration 5SNA1200G450300

    1200G450350

    Abstract: 5SNA1200G450350
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-02 04-2012 Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability


    Original     		PDF 1200G450350 CH-5600 1200G450350 5SNA1200G450350

    Untitled

    Abstract: No abstract text available
    Text: Coaxial Broadband Amplifier 50Ω Variable Gain ZFL-1200G+ 10 to 1200 MHz Features • wideband, 10 to 1200 MHz • rugged, shielded case • gain control range: 60 dB typ. • gain control voltage: 0 to +5V CASE STYLE: Y39 Connectors Model SMA ZFL-1200G+


    Original     		PDF ZFL-1200G+ 2002/95/EC)

    GI1-1600GP

    Abstract: No abstract text available
    Text: GI1-1200GP thru GI1-1600GP Vishay General Semiconductor Miniature High Voltage Glass Passivated Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop


    Original     		PDF GI1-1200GP GI1-1600GP MIL-S-19500 22-B106 AEC-Q101 2002/95/EC 2002/96/EC DO-204AC DO-15) 2011/65/EU GI1-1600GP

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-03 01-2014 • Ultra low-loss, rugged SPT+ chip-set  Smooth switching SPT+ chip-set for good EMC  Industry standard package  High power density  AlSiC base-plate for high power


    Original     		PDF 1200G450350 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-03 01-2014 • Low-loss, rugged SPT chip-set  Smooth switching SPT chip-set for good EMC  High insulation package  High power density  AlSiC base-plate for high power cycling


    Original     		PDF 1200G330100 5SYA1563-03 UL1557, E196689 CH-5600

    GI1-1600GP

    Abstract: DO-204AC GI1-1200GP J-STD-002
    Text: GI1-1200GP thru GI1-1600GP Vishay General Semiconductor Miniature High Voltage Glass Passivated Rectifier FEATURES • Superectifier application SUPERECTIFIER structure for high reliability • Cavity-free glass-passivated junction • Low forward voltage drop


    Original     		PDF GI1-1200GP GI1-1600GP MIL-S-19500 22-B106 DO-204AC DO-15) AEC-Q101 2002/95/EC 2002/96/EC 11-Mar-11 GI1-1600GP DO-204AC J-STD-002

    1200G330100

    Abstract: No abstract text available
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 Doc. No. 5SYA1563-01 04-2012 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC High insulation package High power density AlSiC base-plate for high power cycling capability


    Original     		PDF 1200G330100 5SYA1563-01 CH-5600 1200G330100

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450350 Doc. No. 5SYA 1415-03 01-2014 •     Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling


    Original     		PDF 1200G450350 UL1557, E196689 CH-5600

    Untitled

    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G450300 Doc. No. 5SYA 1401-03 04-2012 Ultra low-loss, rugged SPT+ chip-set Smooth switching SPT+ chip-set for good EMC Industry standard package High power density AlSiC base-plate for high power cycling capability


    Original     		PDF 1200G450300 CH-5600

    5SNA1200G330100

    Abstract: 1200G330100
    Text: VCE IC = = 3300 V 1200 A ABB HiPakTM IGBT Module 5SNA 1200G330100 PRELIMINARY Doc. No. 5SYA 1563-00 Feb.05 • Low-loss, rugged SPT chip-set • Smooth switching SPT chip-set for good EMC • High insulation package • High power density • AlSiC base-plate for high power


    Original     		PDF 1200G330100 IF30100 CH-5600 5SNA1200G330100 1200G330100

    Untitled

    Abstract: No abstract text available
    Text: Drawing Number – WD5 Outline Number – 100A361 Weight 1200g Westcode Customer Services email: [email protected] Telephone: +44 0 1249 444524 Fax: +44 (0)1249 659448


    Original     		PDF 100A361 1200g

    Untitled

    Abstract: No abstract text available
    Text: Drawing Number – W42 Outline Number – 100A310 Weight 1200g Westcode Customer Services email: [email protected] Telephone: +44 0 1249 444524 Fax: +44 (0)1249 659448


    Original     		PDF 100A310 1200g

    Untitled

    Abstract: No abstract text available
    Text: Drawing Number – W44 Outline Number – 101A340 Weight 1200g Westcode Customer Services email: [email protected] Telephone: +44 0 1249 444524 Fax: +44 (0)1249 659448


    Original     		PDF 101A340 1200g

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SILICON DIFFUSED TYPE 1200GXHH22 High Speed Rectifier Applications • Repetitive Peak Reverse Voltage: VRRM=4500V • Average Forward Current: lF AV =1200A • Double Side Cooling Maximum Ratings CHARACTERISTIC SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage


    OCR Scan     		PDF 1200GXHH22 1300g

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 1200GXHH24 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H24 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS


    OCR Scan     		PDF 1200GXHH24 961001EAA1

    toshiba gto

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 1200GXHH25 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H25 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm —4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling


    OCR Scan     		PDF 1200GXHH25 --4500V 961001EAA1 --2500A, toshiba gto

    toshiba gto

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 1200GXHH23 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 1 2 0 0 G X H H23 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : Vrrm = 4500V Average Forward Current : Ijr AV = 1200A Double Side Cooling MAXIMUM RATINGS


    OCR Scan     		PDF 1200GXHH23 961001EAA1 toshiba gto

    1200GXHH22

    Abstract: No abstract text available
    Text: 1200GXHH22 TOSHIBA TOSHIBA FAST RECOVERY RECTIFIER SILICON DIFFUSED TYPE 1 2 0 0 G X H H22 HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage : V r r m = 4500 V Average Forward Current : If AV = 1200 A Double Side Cooling MAXIMUM RATINGS


    OCR Scan     		PDF 1200GXHH22 200GXH 125-C 1200GXHH22