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    125NS Search Results

    125NS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SN74HC125NSR Texas Instruments Quadruple Bus Buffer Gates With 3-State Outputs 14-SO -40 to 85 Visit Texas Instruments Buy
    SN74LVTH125NSR Texas Instruments 3.3-V ABT Quadruple Bus Buffers With 3-State Outputs 14-SO -40 to 85 Visit Texas Instruments Buy
    SN74ALVC125NSR Texas Instruments Quadruple Bus Buffer Gates With 3-State Outputs 14-SO -40 to 85 Visit Texas Instruments Buy
    SN74AHC125NSR Texas Instruments Quadruple Bus Buffer Gates With 3-State Outputs 14-SO -40 to 125 Visit Texas Instruments Buy
    SN74LVTH125NSRE4 Texas Instruments 3.3-V ABT Quadruple Bus Buffers With 3-State Outputs 14-SO -40 to 85 Visit Texas Instruments Buy
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    125NS Price and Stock

    Texas Instruments SN74AHCT125NSR

    IC BUFFER NON-INVERT 5.5V 14SOP
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    DigiKey SN74AHCT125NSR Digi-Reel 3,727 1
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    SN74AHCT125NSR Cut Tape 3,727 1
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    SN74AHCT125NSR Reel 2,000 2,000
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    Mouser Electronics SN74AHCT125NSR 1,952
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    TME SN74AHCT125NSR 3
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    Texas Instruments SN74AHC125NSR

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    DigiKey SN74AHC125NSR Digi-Reel 3,491 1
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    SN74AHC125NSR Cut Tape 3,491 1
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    SN74AHC125NSR Reel 2,000 2,000
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    Mouser Electronics SN74AHC125NSR 2,321
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    Rochester Electronics SN74AHC125NSR 87,924 1
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    TME SN74AHC125NSR 3
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    Texas Instruments SN74LVTH125NSR

    IC BUFFER NON-INVERT 3.6V 14SOP
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    DigiKey SN74LVTH125NSR Digi-Reel 2,000 1
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    SN74LVTH125NSR Cut Tape 2,000 1
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    SN74LVTH125NSR Reel 2,000 2,000
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    Mouser Electronics SN74LVTH125NSR 948
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    Bristol Electronics SN74LVTH125NSR 1,505
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    Rochester Electronics SN74LVTH125NSR 84,122 1
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    Texas Instruments SN74F125NSR

    IC BUFFER NON-INVERT 5.5V 14SOP
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    DigiKey SN74F125NSR Cut Tape 1,978 1
    • 1 $0.55
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    SN74F125NSR Digi-Reel 1,978 1
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    Mouser Electronics SN74F125NSR
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    Rochester Electronics SN74F125NSR 2,825 1
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    Texas Instruments SN74ALVC125NSR

    IC BUFFER NON-INVERT 3.6V 14SOP
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    DigiKey SN74ALVC125NSR Cut Tape 1,787 1
    • 1 $0.59
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    • 100 $0.3282
    • 1000 $0.27995
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    SN74ALVC125NSR Digi-Reel 1,787 1
    • 1 $0.59
    • 10 $0.42
    • 100 $0.3282
    • 1000 $0.27995
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    Mouser Electronics SN74ALVC125NSR 4,706
    • 1 $0.59
    • 10 $0.376
    • 100 $0.305
    • 1000 $0.28
    • 10000 $0.232
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    Rochester Electronics SN74ALVC125NSR 109,379 1
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    • 100 $0.2428
    • 1000 $0.2196
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    Find more 125NS price and stock on Findchips.com

    125NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RURG50100

    Abstract: RURG5070 RURG5080 RURG5090
    Text: RURG5070, RURG5080, RURG5090, RURG50100 S E M I C O N D U C T O R 50A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<125ns JEDEC STYLE 2 LEAD TO-247 o ANODE • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C


    Original     		PDF RURG5070, RURG5080, RURG5090, RURG50100 125ns O-247 RURG5090 RURG50100 RURG5070 RURG5080

    RURG50120

    Abstract: TA49099
    Text: RURG50120 S E M I C O N D U C T O R 50A, 1200V Ultrafast Diode April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . <125ns JEDEC STYLE 2 LEAD TO-247 ANODE o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C


    Original     		PDF RURG50120 125ns O-247 TA49099) 125ns) 175oC RURG50120 TA49099

    30N60B3D

    Abstract: No abstract text available
    Text: IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat  tfi(typ) = Extreme Light Punch Through IGBT for 5-30 kHz Switching 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M


    Original     		PDF IXXH30N60B3D1 IC110 125ns O-247 IF110 30N60B3D1 30N60B3D

    75N60B3D1

    Abstract: IXXH75N60B3
    Text: Advance Technical Information IXXH75N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60B3 IC110 125ns O-247 062in. 75N60B3D1 IXXH75N60B3

    IXXH30N60B3D1

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH30N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXXH30N60B3D1 125ns O-247 IF110 30N60B3D1 IXXH30N60B3D1

    RURU50100

    Abstract: No abstract text available
    Text: RURU50100 Data Sheet January 2000 File Number 3376.3 50A, 1000V Ultrafast Diode Features The RURU50100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial


    Original     		PDF RURU50100 RURU50100 125ns) 125ns

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		PDF IC110 IXXH75N60B3D1 125ns O-247 IF110 75N60B3

    RURG80100

    Abstract: RURG8070 RURG8080 RURG8090
    Text: S E M I C O N D U C T O R RURG8070, RURG8080, RURG8090, RURG80100 80A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . .<125ns JEDEC STYLE 2 LEAD TO-247 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C


    Original     		PDF RURG8070, RURG8080, RURG8090, RURG80100 125ns O-247 RURG8090 RURG80100 RURG8070 RURG8080

    URU100120

    Abstract: RURU100120
    Text: RURU100120 Data Sheet January 2000 File Number 3545.3 100A, 1200V Ultrafast Diode Features The RURU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial


    Original     		PDF RURU100120 RURU100120 125ns) 125ns URU100120

    RURU50100

    Abstract: No abstract text available
    Text: RURU50100 Data Sheet January 2002 50A, 1000V Ultrafast Diode Features The RURU50100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF RURU50100 RURU50100 125ns) 125ns 175oC

    URU100120

    Abstract: tic 122 RURU100120
    Text: RURU100120 S E M I C O N D U C T O R 100A, 1200V Ultrafast Diode April 1945 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . <125ns JEDEC STYLE SINGLE LEAD TO-218 o • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C


    Original     		PDF RURU100120 125ns O-218 TA49020) 125ns) 100oC URU100120 tic 122 RURU100120

    Untitled

    Abstract: No abstract text available
    Text: RURG80100 Data Sheet January 2002 80A, 1000V Ultrafast Diode Features The RURG80100 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		PDF RURG80100 RURG80100 125ns) 125ns

    28F256J3

    Abstract: 28F128J3 TE28F640J3C120 253418 297833 28F160S3 28F320J3 28F320J5 28F320S3 28F640J3
    Text: Intel StrataFlash Memory J3 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125ns Initial Access Speed (256Mbit density only) — 25 ns Asynchronous Page-Mode Reads


    Original     		PDF 28F256J3, 28F128J3, 28F640J3, 28F320J3 x8/x16) 125ns 256Mbit 256Mbit 32-Byte 128-bit 28F256J3 28F128J3 TE28F640J3C120 253418 297833 28F160S3 28F320J3 28F320J5 28F320S3 28F640J3

    HCC4085B

    Abstract: HCC4085BF HCF4085B HCF4085BC1 HCF4085BEY HCF4085BM1
    Text: HCC/HCF4085B DUAL 2-WIDE 2-INPUT AND-OR-INVERTER GATE . . . . . MEDIUM-SPEED OPERATION – tPHL = 90ns ; tPLH = 125ns TYP. AT 10V INDIVIDUAL INHIBIT CONTROLS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED TO 20V FOR HCC DEVICE


    Original     		PDF HCC/HCF4085B 125ns 100nA HCC4085BF HCF4085BM1 HCF4085BEY HCF4085BC1 HCC4085B HCC4085BF HCF4085B HCF4085BC1 HCF4085BEY HCF4085BM1

    30N60B3D

    Abstract: 30N60B3 IXXH30N60B3D1
    Text: Advance Technical Information IXXH30N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 30A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH30N60B3D1 IC110 125ns O-247 IF110 062in. 30N60B3D1 30N60B3D 30N60B3 IXXH30N60B3D1

    75N60B3

    Abstract: IXXH75N60B3D1 75n60
    Text: Advance Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60B3D1 IC110 125ns O-247 IF110 062in. 75N60B3 IXXH75N60B3D1 75n60

    HCF4085B

    Abstract: HCF4085BEY HCF4085BM1 HCF4085M013TR
    Text: HCF4085B DUAL 2-WIDE 2-INPUT AND-OR INVERTER GATE • ■ ■ ■ ■ ■ ■ ■ MEDIUM-SPEED OPERATION tPHL = 90ns, tPLH = 125ns Typ. at 10V INDIVIDUAL INHIBIT CONTROLS QUIESCENT CURRENT SPECIFIED UP TO 20V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS


    Original     		PDF HCF4085B 125ns 100nA JESD13B HCF4085B HCF4085BEY HCF4085pecifications HCF4085BEY HCF4085BM1 HCF4085M013TR

    Untitled

    Abstract: No abstract text available
    Text: RURG50120 S em iconductor 50A, 1200V Ultrafast Diode April 1995 Package Features • U Itrafast with Soft Recovery. <125ns JEDEC STYLE 2 LEAD TO-247 ANODE • Operating Temperature. +175°C


    OCR Scan     		PDF RURG50120 125ns O-247 TA49099) 125ns)

    Untitled

    Abstract: No abstract text available
    Text: IN T E O R A T E D C IR C U IT S U N I T R O ID E Low Power, Dual Output, Current Mode PWM Controller FEATURES • BiCMOS Version of UC1846 Families 1.4mA Max Operating Current 100|aA Max Start-up Current 1.OA Peak Output Current 125nsec Circuit Delay UCC1806


    OCR Scan     		PDF UC1846 125nsec UCC1806 UCC2806 UCC3806 UCC1806 UC1846

    PLA 16L8

    Abstract: application Pla 16l8
    Text: Li! HARRIS ÍH HPL-16LC8 CMOS HPL Harris Programmable Logic Features Pinouts TO P VI£W • Pin & Function C om patible with the B ipo lar 16L8 and 16P8 to [ T ¡ 3 VCC • Fast Access In p u t to O u tp u t . 125ns M ax. 11 Ü l FI


    OCR Scan     		PDF 125ns -40OC PLA 16L8 application Pla 16l8

    Untitled

    Abstract: No abstract text available
    Text: CMOS HPL Harris Programmable Logic Features Pinouts TOP VIEW • Pin & Function C om patible w ith the B ipo lar 16RB, 16R6 and 16R4 - 16RC8 - 16RC6 • S caled S A JI IV C M O S Process • Fast A c c e s s . In p u t to O u tp u t 125ns M ax.


    OCR Scan     		PDF 125ns L-16R

    BOUT13

    Abstract: multi 9
    Text: INTEGRATED CIRCUITS UCCI 806 UCC2806 UCC3806 UNITRODE Low Power, Dual Output, Current Mode PWM Controller FEATURES • BiCMOS Version of UC1846 Families 1,4mA Maximum Operating Current "lOOpA Maximum Startup Current • 1.0A Peak Output Current • 125nsec Circuit Delay


    OCR Scan     		PDF UCC2806 UCC3806 UC1846 125nsec UCC1806 BOUT13 multi 9

    URU100120

    Abstract: No abstract text available
    Text: RURU100120 Semiconductor 100A, 1200V U ltrafast Diode April 1995 Package Features • U Itrafast with Soft Recovery. <125ns JEDEC STYLE SINGLE LEAD TO-218 • Operating Temperature. +175°C


    OCR Scan     		PDF RURU100120 125ns O-218 TA49020) 125ns) URU100120

    A9RV

    Abstract: 5s a315 A327
    Text: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF TC514900AJLL-70/80 TC514900AJLL TC514900AJLI/70/80 TC514900AJLL70/80 A9RV 5s a315 A327