SiA427DJ
Abstract: SiA427DJ-T1-GE3 SIA427DJ-T1
Text: New Product SiA427DJ Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.016 at VGS = - 4.5 V - 12a 0.0215 at VGS = - 2.5 V - 12a 0.026 at VGS = - 1.8 V - 12a 0.032 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V
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SiA427DJ
SC-70
SC-70-6L-Single
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
SiA427DJ-T1-GE3
SIA427DJ-T1
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Untitled
Abstract: No abstract text available
Text: New Product SiA427DJ Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.016 at VGS = - 4.5 V - 12a 0.0215 at VGS = - 2.5 V - 12a 0.026 at VGS = - 1.8 V - 12a 0.032 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V
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SiA427DJ
SC-70-6L-Single
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiA427ADJ Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () (Max.) ID (A) 0.016 at VGS = - 4.5 V - 12a 0.0215 at VGS = - 2.5 V - 12a 0.026 at VGS = - 1.8 V - 12a 0.032 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V
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SiA427ADJ
SC-70-6L-Single
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product SiA427DJ Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.016 at VGS = - 4.5 V - 12a 0.0215 at VGS = - 2.5 V - 12a 0.026 at VGS = - 1.8 V - 12a 0.032 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V
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SiA427DJ
SC-70-6L-Single
SC-70
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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STF11NM65
Abstract: p11nm6
Text: STB11NM65N-1 - STF11NM65N STP11NM65N - STW11NM65N N-channel 650V - 0.33Ω - 12A - TO-220/FP- I2PAK - TO-247 Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STB11NM65N-1 710V < 0.38Ω 12A STF11NM65N 710V < 0.38Ω 12A(1) STP11NM65N
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STB11NM65N-1
STF11NM65N
STP11NM65N
STW11NM65N
O-220/FP-
O-247
STW11NM65N
STF11NM65
p11nm6
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STB13NM50N-1
Abstract: STF13NM50N STB13NM50N STP13NM50N STW13NM50N F13NM50N
Text: STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500V - 0.250Ω - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STB13NM50N 550V <0.32Ω 12A STB13NM50N-1 550V <0.32Ω 12A STF13NM50N
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STB13NM50N/-1
STF13NM50N
STP13NM50N
STW13NM50N
O-220/FP
O-247-I2/D2PAK
STB13NM50N
STB13NM50N-1
STP13NM50N
STB13NM50N-1
STF13NM50N
STB13NM50N
STW13NM50N
F13NM50N
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p12nm50fp
Abstract: p12nm50 STP12NM50FP b12nm50 STB12NM50 STB12NM50-1 STB12NM50T4 STP12NM50 N-Channel mosfet 400v to220
Text: STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STB12NM50 550V <0.35Ω 12A STB12NM50-1 550V <0.35Ω 12A STP12NM50 550V <0.35Ω
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STP12NM50
STP12NM50FP
STB12NM50
STB12NM50-1
O-220/FP/D2/I2PAK
STB12NM50
STP12NM50
O-220FP
p12nm50fp
p12nm50
STP12NM50FP
b12nm50
STB12NM50-1
STB12NM50T4
N-Channel mosfet 400v to220
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P12NM50
Abstract: p12nm50fp B12NM50
Text: STP12NM50 - STP12NM50FP STB12NM50 - STB12NM50-1 N-channel 550V @ tjmax - 0.30Ω - 12A TO-220/FP/D2/I2PAK MDmesh Power MOSFET General features Type VDSS @Tjmax RDS(on) ID STB12NM50 550V <0.35Ω 12A STB12NM50-1 550V <0.35Ω 12A STP12NM50 550V <0.35Ω
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STP12NM50
STP12NM50FP
STB12NM50
STB12NM50-1
O-220/FP/D2/I2PAK
STB12NM50
STP12NM50
O-220FP
P12NM50
p12nm50fp
B12NM50
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SI5481DU
Abstract: No abstract text available
Text: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET
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Si5481DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET
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Si5481DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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SI5481DU
Abstract: No abstract text available
Text: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET
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Si5481DU
Si5481DU-T1-GE3
11-Mar-11
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D12NF
Abstract: D12NF06L 20K60 STD12NF06L-1 JESD97 STD12NF06L STD12NF06LT4
Text: STD12NF06L STD12NF06L-1 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD12NF06L STD12NF06L-1 60V 60V <0.1Ω <0.1Ω 12A 12A 3 3 2 1 • Exceptional dv/dt capability ■ Low gate charge DPAK
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STD12NF06L
STD12NF06L-1
D12NF
D12NF06L
20K60
STD12NF06L-1
JESD97
STD12NF06L
STD12NF06LT4
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SI5481DU
Abstract: No abstract text available
Text: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET
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Si5481DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET
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Si5481DU
Si5481DU-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Si5481DU
Abstract: Si5481DU-T1-GE3 marking code bc
Text: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET
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Si5481DU
18-Jul-08
Si5481DU-T1-GE3
marking code bc
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D12NF
Abstract: D12NF06L STD12NF06L
Text: STD12NF06L STD12NF06L-1 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD12NF06L STD12NF06L-1 60V 60V <0.1Ω <0.1Ω 12A 12A 3 3 2 1 • Exceptional dv/dt capability ■ Low gate charge DPAK
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STD12NF06L
STD12NF06L-1
STD12NF06LT4
STD12NF06L-1
D12NF06erein
D12NF
D12NF06L
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Untitled
Abstract: No abstract text available
Text: New Product Si5481DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • Halogen-free • TrenchFET Power MOSFET
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Si5481DU
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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74637
Abstract: SiA417
Text: New Product SiA417DJ Vishay Siliconix P-Channel 8-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 12a 0.031 at VGS = - 2.5 V - 12a 0.040 at VGS = - 1.8 V - 12 a 0.058 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V
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SiA417DJ
SC-70
SC-70-6L-Single
SiA417DJ-T1-GE3
18-Jul-08
74637
SiA417
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SI5481DU-T1-E3
Abstract: Si5481DU marking code bc si5481 7377-7
Text: Si5481DU Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.022 at VGS = - 4.5 V - 12a 0.029 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a • TrenchFET Power MOSFET • New thermally Enhanced PowerPAK®
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Si5481DU
08-Apr-05
SI5481DU-T1-E3
marking code bc
si5481
7377-7
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Untitled
Abstract: No abstract text available
Text: New Product SiA431DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.025 at VGS = - 4.5 V - 12a 0.031 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a 0.070 at VGS = - 1.5 V -4 • TrenchFET Power MOSFET
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SiA431DJ
SC-70
SC-70-6L-Single
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: New Product SiA431DJ Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.025 at VGS = - 4.5 V - 12a 0.031 at VGS = - 2.5 V - 12a 0.041 at VGS = - 1.8 V - 12a 0.070 at VGS = - 1.5 V -4 • TrenchFET Power MOSFET
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SiA431DJ
SC-70
SC-70-6L-Single
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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D12NF
Abstract: d12nf06
Text: STD12NF06-1 STD12NF06 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD12NF06 60V <0.1Ω 12A STD12NF06-1 60V <0.1Ω 12A • Exceptional dv/dt capability ■ Low gate charge 3 3 2 1 DPAK 1 IPAK
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STD12NF06-1
STD12NF06
STD12NF06
STD12NF06-1
STD12NF06T4
D12NF06
D12erein
D12NF
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D12NF
Abstract: D12N JESD97 STD12NF06 STD12NF06-1 STD12NF06T4 d12nf06
Text: STD12NF06-1 STD12NF06 N-channel 60V - 0.08Ω - 12A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD12NF06 60V <0.1Ω 12A STD12NF06-1 60V <0.1Ω 12A • Exceptional dv/dt capability ■ Low gate charge 3 3 2 1 DPAK 1 IPAK
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STD12NF06-1
STD12NF06
D12NF
D12N
JESD97
STD12NF06
STD12NF06-1
STD12NF06T4
d12nf06
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SIA413ADJ
Abstract: No abstract text available
Text: New Product SiA413ADJ Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () (Max.) ID (A) 0.029 at VGS = - 4.5 V - 12a 0.034 at VGS = - 2.5 V - 12a 0.044 at VGS = - 1.8 V - 12a 0.100 at VGS = - 1.5 V -3 Qg (Typ.)
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SiA413ADJ
SC-70-6L-Single
SC-70
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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