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    SIA427ADJ Price and Stock

    Vishay Siliconix SIA427ADJ-T1-GE3

    MOSFET P-CH 8V 12A PPAK SC70-6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIA427ADJ-T1-GE3 Digi-Reel 10,720 1
    • 1 $0.81
    • 10 $0.504
    • 100 $0.81
    • 1000 $0.22442
    • 10000 $0.22442
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    SIA427ADJ-T1-GE3 Cut Tape 10,720 1
    • 1 $0.81
    • 10 $0.504
    • 100 $0.81
    • 1000 $0.22442
    • 10000 $0.22442
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    SIA427ADJ-T1-GE3 Reel 6,000 3,000
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    New Advantage Corporation SIA427ADJ-T1-GE3 75,000 1
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    Vishay Intertechnologies SIA427ADJ-T1-GE3

    P-CHANNEL 8-V (D-S) MOSFET - Tape and Reel (Alt: SIA427ADJ-T1-GE3)
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    Avnet Americas SIA427ADJ-T1-GE3 Reel 3,000 17 Weeks 3,000
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    Mouser Electronics SIA427ADJ-T1-GE3 45,350
    • 1 $0.6
    • 10 $0.41
    • 100 $0.279
    • 1000 $0.2
    • 10000 $0.161
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    Verical SIA427ADJ-T1-GE3 30,000 3,000
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    SIA427ADJ-T1-GE3 15,000 3,000
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    SIA427ADJ-T1-GE3 3,000 3,000
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    SIA427ADJ-T1-GE3 52 37
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    Arrow Electronics SIA427ADJ-T1-GE3 15,000 17 Weeks 3,000
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    SIA427ADJ-T1-GE3 3,000 17 Weeks 3,000
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    • 10000 $0.1366
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    SIA427ADJ-T1-GE3 Cut Strips 52 17 Weeks 1
    • 1 $0.2827
    • 10 $0.2376
    • 100 $0.1611
    • 1000 $0.1611
    • 10000 $0.1611
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    Newark SIA427ADJ-T1-GE3 Cut Tape 9,350 5
    • 1 $0.49
    • 10 $0.334
    • 100 $0.263
    • 1000 $0.263
    • 10000 $0.263
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    SIA427ADJ-T1-GE3 Reel 3,000
    • 1 $0.212
    • 10 $0.212
    • 100 $0.212
    • 1000 $0.212
    • 10000 $0.191
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    TTI SIA427ADJ-T1-GE3 Reel 30,000 3,000
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    Avnet Asia SIA427ADJ-T1-GE3 19 Weeks 3,000
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    Chip1Stop SIA427ADJ-T1-GE3 Cut Tape 55
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    • 10 $0.44
    • 100 $0.267
    • 1000 $0.267
    • 10000 $0.267
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    EBV Elektronik SIA427ADJ-T1-GE3 18 Weeks 3,000
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    Vishay Intertechnologies SIA427ADJ-T1-GE3.

    Channel Type:P Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:12A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:800Mv; Power Dissipation:19W; No. Of Pins:6Pins Rohs Compliant: No |Vishay SIA427ADJ-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SIA427ADJ-T1-GE3. Reel 3,000
    • 1 $0.141
    • 10 $0.141
    • 100 $0.141
    • 1000 $0.141
    • 10000 $0.14
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    SIA427ADJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA427ADJ-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 8V 12A 6SC-70 Original PDF

    SIA427ADJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA427ADJ Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () (Max.) ID (A) 0.016 at VGS = - 4.5 V - 12a 0.0215 at VGS = - 2.5 V - 12a 0.026 at VGS = - 1.8 V - 12a 0.032 at VGS = - 1.5 V - 12a 0.095 at VGS = - 1.2 V


    Original
    PDF SiA427ADJ SC-70-6L-Single SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA427ADJ www.vishay.com Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF SiA427ADJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiA427ADJ_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original
    PDF SiA427ADJ AN609, 0083u 1451u 8930m 6986u 9674m 5172m 16-Nov-11

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original
    PDF SC-70 SiA519EDJ com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1402

    SI1489EDH

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems


    Original
    PDF SiA920DJ SC-70 SiB914DK SC-75 Si1011X Si8805EDB com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1402 SI1489EDH