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    Vishay Siliconix SI1011X-T1-GE3

    MOSFET P-CH 12V SC89-3
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    SI1011X Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI1011X-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V SC-89 Original PDF

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    Si1011X

    Abstract: No abstract text available
    Text: Si1011X Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () Max. ID (A) 0.640 at VGS = - 4.5 V - 0.48 0.880 at VGS = - 2.5 V - 0.41 1.200 at VGS = - 1.8 V - 0.35 1.443 at VGS = - 1.5 V - 0.10 2.475 at VGS = - 1.2 V


    Original
    PDF Si1011X SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI1489EDH

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems


    Original
    PDF SiA920DJ SC-70 SiB914DK SC-75 Si1011X Si8805EDB com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1402 SI1489EDH