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    Vishay Semiconductors SE12DB-M3-I

    DIODE GEN PURP 100V 3.2A TO263AC
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    DigiKey SE12DB-M3-I Digi-Reel 1
    • 1 $1.45
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    SE12DB-M3-I Cut Tape 1
    • 1 $1.45
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    SE12DB-M3-I Reel 4,000
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    Vishay Intertechnologies SE12DB-M3/I

    12A, 120V, ESD PROTECTION, SMPD - Tape and Reel (Alt: SE12DB-M3/I)
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    Avnet Americas SE12DB-M3/I Reel 8 Weeks 4,000
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    Mouser Electronics SE12DB-M3/I
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    Newark SE12DB-M3/I Reel 4,000
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    Bristol Electronics SE12DB-M3/I 1,794
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    TTI SE12DB-M3/I Reel 4,000
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    Bimba Manufacturing Company LT-0412-DBM

    Thruster, Linear Thruster Cylinder ; 3/4in Bore ; Stroke: 12 in; Double Acting | Bimba LT-0412-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-0412-DBM Bulk 5 Weeks 1
    • 1 $92.3
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    Bimba Manufacturing Company LT-1712-DBM

    Thruster, Linear Thruster Cylinder ; 1-1/2in Bore ; Stroke: 12 in; Double Actin | Bimba LT-1712-DBM
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    RS LT-1712-DBM Bulk 5 Weeks 1
    • 1 $149.1
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    Bimba Manufacturing Company LT-5012-DBM

    Thruster, Linear Thruster Cylinder ; 2-1/2in Bore ; Stroke: 12 in; Double Actin | Bimba LT-5012-DBM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS LT-5012-DBM Bulk 5 Weeks 1
    • 1 $237.81
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    • 100 $237.81
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    12DBM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FMC2122LN-03

    Abstract: k-band amplifier
    Text: FMC2122LN-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Low Noise: NF = 3.0dB (Typ.) Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)


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    PDF FMC2122LN-03 12dBm FMC2122LN-03 k-band amplifier

    Rogers-4003

    Abstract: CAPACITOR 33PF FPD1050SOT89 rogers 4003 26GHz LNA
    Text: EB1050SOT89-AG FPD1050SOT89 2.6GHz LNA EVALUATION BOARD FEATURES Measured @ 2.6GHz • 25dBm Output Power • 16dB Gain ¥ 0.6dB Noise Figure ¥ 36dBm OIP3 measured at 12dBm per tone ¥ Bias Vd = 5V, Id = 80mA, Vg = -0.5V ~ -0.8V DESCRIPTION AND APPLICATIONS


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    PDF EB1050SOT89-AG FPD1050SOT89 25dBm 36dBm 12dBm FPD1050SOT89; 1050m 30mil LL1608 Rogers-4003 CAPACITOR 33PF rogers 4003 26GHz LNA

    KC2-50

    Abstract: 26X1
    Text: Frequency Multiplier Doubler KC2-50+ Typical Performance Curves Conversion Loss X2 Output Harmonic X1 Output 16 30 Conversion Loss (dB) Harmonic Ouput (-dBc) Conversion Loss X2 Output @RF IN=+7dBm 15 Conversion Loss X2 Output @RF IN=+12dBm 14 13 12 11 10


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    PDF KC2-50+ 12dBm Harmoni500 KC2-50 26X1

    FMC1819LN-02

    Abstract: Fujitsu Ku microwave
    Text: FMC1819LN-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)


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    PDF FMC1819LN-02 12dBm FMC1819LN-02 Fujitsu Ku microwave

    ADL5382

    Abstract: C-7X tone center tap transformer for rf signal
    Text: Preliminary Technical Data 400 to 6000MHz Quadrature Demodulator ADL5380 FEATURES I/Q Demodulator RF frequency 400 MHz to 6000MHz IIP3 +31 dBm IIP2 +60dBm Input P1dB +12dBm NF 13.2 dB @ 2.5GHz Voltage Conversion Gain of 4dB Quadrature demodulation accuracy


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    PDF 6000MHz 60dBm 12dBm ADL5380 -CDMA/CDMA/CDMA2000/GSM ADL5380 31dBm demodulato600BL14M050 ADL5382 C-7X tone center tap transformer for rf signal

    Signal Generator

    Abstract: SG010M3R0GB
    Text: 3GHz low phase noise CW signal generator Model Name : SG010M3R0GB < Phase Noise > Pout=+12dBm < Specifications > Items Output frequency range Frequency step Output power Output power step Frequency setting time Frequency stability Phase noise at 10kHz offset


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    PDF SG010M3R0GB 12dBm) 10kHz 10MHz -95dBc/Hz 10kHz, 20ppb 30days -137dBc Signal Generator SG010M3R0GB

    Untitled

    Abstract: No abstract text available
    Text: < High-power GaAs FET small signal gain stage > MGF0919A L & S BAND / 1W SMD non - matched DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm(TYP.) @f=1.9GHz,Pin=12dBm


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    PDF MGF0919A MGF0919A 30dBm 12dBm 300mA 50pcs)

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Mixer 2-600 MHz – High Isolation Package Style 40L XMBD3-40EM Key Features • • • • L/R Isolation 55 dB LO Power +7dBm to +12dBm IP3 +18 dBm Solder Reflow to 240°C Guaranteed Specifications Frequency Range RF LO IF 2-600 2-600 DC-200


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    PDF 12dBm XMBD3-40EM DC-200

    Untitled

    Abstract: No abstract text available
    Text: Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK SAW Filter 2017.50MHz Part No: MP04468 Model: TA1193A Rev No:1 A. MAXIMUM RATING: 1. Input Power Level: 12dBm 2. DC Voltage: 3V


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    PDF 50MHz MP04468 TA1193A 12dBm 2025MHz) TA1193A

    LNA SOT23-6

    Abstract: No abstract text available
    Text: Maxim Solutions for 3.5GHz Wireless Local Loop MAX2683/MAX2684 MAX2680/MAX2681/MAX2682/MAX2690 3.4GHz to 3.8GHz RF Frequency Range Logic-Enabled LO Frequency Doubler +6.7dB Gain MAX2683 +1.0dB Gain (MAX2684) Adjustable IIP3 +7dBm to +11dBm (MAX2683) Adjustable IIP3 +8dBm to +12dBm (MAX2684)


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    PDF MAX2683/MAX2684 MAX2683) MAX2684) 11dBm 12dBm 16-pin MAX2645 MAX2680/MAX2681/MAX2682/MAX2690 LNA SOT23-6

    RFVC1824SR

    Abstract: JESD22-A114 gaas varactor diodes RFVC1824SQ
    Text: RFVC1824 RFVC1824Low Noise MMIC VCO with Buffer Amplifier LOW NOISE MMIC VCO WITH BUFFER AMPLIFIER Package: QFN, 24 Pin, 4mm x 4mm Features       7.2 to 8.0GHz Operation -106dBc/Hz Phase Noise @ 100KHz offset 12dBm POUT No external resonator or


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    PDF RFVC1824 RFVC1824Low -106dBc/Hz 100KHz 12dBm RFVC1824 DS101007 RFVC1824SR JESD22-A114 gaas varactor diodes RFVC1824SQ

    MMIC Amplifier A04

    Abstract: MMIC A04 A04 monolithic amplifier MSA-0486-TR1 MSA-0486-TR2 MSA-04 MSA-0486 MSA-0486-BLK monolithic amplifier MSA A MSA-0486-TR1G
    Text: f2 Products > RF ICs/Discretes > RF ICs > Silicon Amplifiers, Gain Blocks > MSA-0486 MSA-0486 >6V Fixed Gain, 12 dBm General Purpose Amplifier Description Lifecycle status: Active Features The MSA-04 is a general purpose cascadable 50ohm 12dBm gain block targeted for narrow


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    PDF MSA-0486 MSA-04 50ohm 12dBm MSA-0486 MSA-0486-BLK MSA-0486-BLKG MSA-0486-TR1 MMIC Amplifier A04 MMIC A04 A04 monolithic amplifier MSA-0486-TR1 MSA-0486-TR2 MSA-0486-BLK monolithic amplifier MSA A MSA-0486-TR1G

    4977 gm

    Abstract: MGF0919A
    Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0919A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0919A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=30dBm TYP. @f=1.9GHz,Pin=12dBm


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    PDF MGF0919A MGF0919A 30dBm 12dBm 300mA 4977 gm

    FPM21500QFN

    Abstract: 22nH 33PF
    Text: EB21500QFN-AA FPM21500QFN 1.7 - 2.0GHz LNA EVALUATION BOARD FEATURES Measured @ 1.85GHz • 29 dBm Output Power • 16.5 dB Small Signal Gain • 0.60 dB Noise Figure • 38 dBm OIP3 measured @ Pout = 12dBm per tone ● Bias 4V, 100mA DESCRIPTION AND APPLICATIONS


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    PDF EB21500QFN-AA FPM21500QFN 85GHz 12dBm 100mA FPM21500QFN; 22nH 33PF

    AB-DRO-14.5GHZ

    Abstract: No abstract text available
    Text: 14.5GHz Dielectric Resonator Oscillator AB-DRO-14.5GHz Pb RoHS Compliant FEATURES: • High Carrier Frequency –14.5GHz • Wide operating temperature range • Linear Tuning Range • Low Power Design 300mA max • High Output Power (+12dBm min) • Excellent VSWR characteristics


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    PDF AB-DRO-14 300mA 12dBm ISO9001 AB-DRO-14.5GHZ

    AB-PLLDRO-12.8GHZ

    Abstract: dielectric resonator oscillator
    Text: 12.8GHz Dielectric Resonator Oscillator AB-PLLDRO-12.8GHz Pb RoHS Compliant FEATURES: • High Carrier Frequency –12.8GHz • Wide operating temperature range • Linear Tuning Range • Low Power Design 300mA max • High Output Power (+12dBm min) • Excellent VSWR characteristics


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    PDF AB-PLLDRO-12 300mA 12dBm ISO9001 AB-PLLDRO-12.8GHZ dielectric resonator oscillator

    MARKING PB

    Abstract: No abstract text available
    Text: 12.8GHz Dielectric Resonator Oscillator AB-PLLDRO-12.8GHz Pb RoHS /RoHS II Compliant FEATURES: • High Carrier Frequency –12.8GHz • Wide operating temperature range • Linear Tuning Range • Low Power Design 300mA max • High Output Power (+12dBm min)


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    PDF AB-PLLDRO-12 300mA 12dBm ISO9001 MARKING PB

    RFVC1824SQ

    Abstract: Buffer Amplifier Ghz
    Text: RFVC1824 RFVC1824Low Noise MMIC VCO with Buffer Amplifier LOW NOISE MMIC VCO WITH BUFFER AMPLIFIER Package: QFN, 24 Pin, 4mm x 4mm Features       7.2GHz to 8.3GHz Operation -106dBc/Hz Phase Noise at 100kHz offset 12dBm POUT No external resonator or


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    PDF RFVC1824Low RFVC1824 -106dBc/Hz 100kHz 12dBm RFVC1824 DS111018 RFVC1824SQ Buffer Amplifier Ghz

    Untitled

    Abstract: No abstract text available
    Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com= SAW Filter 743.0MHz Part No: MA07973 Model: TA0343A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 12dBm 2. DC voltage: 10V


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    PDF MA07973 TA0343A 12dBm 746MHz 746MHz 643MHz 693MHz 720MHz 793MHz

    c12x

    Abstract: No abstract text available
    Text: Preliminary Technical Data 400 to 6000MHz Quadrature Demodulator ADL5380 FEATURES I/Q Demodulator RF frequency 400 MHz to 6000MHz IIP3 +31 dBm IIP2 +60dBm Input P1dB +12dBm NF 13.2 dB @ 2.5GHz Voltage Conversion Gain of 4dB Quadrature demodulation accuracy


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    PDF 6000MHz 60dBm 12dBm ADL5380 -CDMA/CDMA/CDMA2000/GSM ADL5380 31dBm 3600BL14M050 c12x

    813MHz

    Abstract: No abstract text available
    Text: Golledge Electronics Ltd Eaglewood Park, ILMINSTER Somerset, TA19 9DQ, UK Tel: +44 1460 256 100 Fax: +44 1460 256 101 www.golledge.com SAW Filter 713.0MHz Part No: MA07972 Model: TA0342A Rev No: 1 A. MAXIMUM RATING: 1. Input Power Level: 12dBm 2. DC voltage: 10V


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    PDF MA07972 TA0342A 12dBm 716MHz 716MHz 613MHz 663MHz 690MHz 746MHz 813MHz

    FMC2223LN-03

    Abstract: No abstract text available
    Text: FM C2223LN- 03 f ' , f UJIIbU Ku K -lh in d r o w e r CiaA s M odules FEATU RES ♦ High Output Power: P-jdB • 12dBm Typ. ♦ High Gain: G -j^g = 12dB(Typ.) ♦ Low In/Out VSWR ♦ Low Noise: NF « 3.0dB (Typ.) ♦ Broad Band: 22.4 - 23.6GHz ♦ Impedance Matched Zin/Zout = 50£2


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    PDF FMC2223LN-03 12dBm FMC2223LN-03 -15dBm

    J221

    Abstract: FMC2122LN-03
    Text: F | . S Mu. K-Band Power GaAs Modules F M C 2 1 2 2 L N - 3 j U . . r UJ11j U FEATU RES • • • • • • • High Output Power: P1CjB • 12dBm Typ. High Gain: G-j^ b = 12dB(Typ.) Low In/Out VSWR Low Noise: NF - 3.0dB (Typ.) Broad Band: 21.2 ~ 22.4GHz


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    PDF MC2122 12dBm FMC2122LN-03 -15dBm FMC2122LN- J221

    Untitled

    Abstract: No abstract text available
    Text: Panasonic GaAs MMICs GN2012 GaAs N-Channel IC Unit : mm For UHF band mixer • Features • Large-capacitance capacitor built-in external bypass capacitor not necessary • Low distortion (IP3=12dBm) • High conversion gain (CG=12dB) • Small package : S-mini type 5-pin package


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    PDF GN2012 12dBm) 83MHz 390nH 100pF 1000pF 100MHz