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Catalog Datasheet	MFG & Type	PDF	Document Tags
MWT-A970 Abstract: AVC 703 Text: MwT-A9 18 GHz High Gain, Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y r +24.5 dBm OUTPUT POWER AT 12 GHz 9 dB SMALL SIGNAL GAIN AT 12 GHz 1.6 dB NOISE FIGURE AT 12 GHz 0.3 MICRON REFRACTORY METAL/GOLD GATE 750 MICRON GATE WIDTH CHOICE OF CHIP AND THREE	OCR Scan	PDF
0g18 Abstract: 0G66 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1403B LOW NOISE GaAs FET D E S C R IP T IO N The M G F 1 4 0 3 B low-noise GaAs FET with an N-channel Schottky gate is designed for use in S to Ku band am pli fiers. The hermetically sealed metal-ceram ic package as	OCR Scan	PDF	MGF1403B MGF1403B F1403B 12GHz 0g18 0G66
Untitled Abstract: No abstract text available Text: MwT-S7 18 GHz High Gain, Low Noise GaAs FET MICROWAVE TECHNOLOGY n • HIGH AVAILABLE GAIN WHEN BIASED FOR LOW-NOISE • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR BUFFER APPUCATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 250 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO	OCR Scan	PDF
2388 Abstract: 1S80 Text: S M F -0 6 0 2 0 e itC T A O N « Sam sung M icrow ave Sem iconductor P O W O r O p t im iz e d GaAs FET 2-14 GHz Description Features The SMF-06020 Is a packaged version of the SMF-06000. The chip Is a 600 urn n-channel M ES FET with 0.5 jim gate length, utilizing Samsung Microwave’s power optimized P5	OCR Scan	PDF	SMF-06020 SMF-06020 SMF-06000. SMF-06000 2388 1S80
Untitled Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF1902B TAPE CARRIER LOW NOISE GaAs FET DESCRIPTION The MGF1 902 B is a low noise GaAs FET w ith an N-channel S chottky gate, which is designed fo r use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic package assures minimum parasitic losses, and	OCR Scan	PDF	MGF1902B MGF1902B MGF13Q2. 12GH2 30rnA