NF 034
Abstract: IGBT abb datasheets 12K1201
Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA1635-01 Sep 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions
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Original
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12K1201
5SYA1635-01
CH-5600
NF 034
IGBT abb datasheets
12K1201
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1262 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1630-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage
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Original
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12K1262
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1323-01 12 01 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage
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Original
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12K1721
CH-5600
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PDF
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76K1280
Abstract: No abstract text available
Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-03 04 14 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values
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Original
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12K1280
CH-5600
76K1280
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PDF
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ld33b
Abstract: LD45B RN66 25p80 LD12B
Text: 120K AP7331-ADJ R101 R102 22K 12K1 E5 C35 C31 C36 C37 10uF 100nF 100nF 100nF 100nF LD81B LD82B GP66 UP PULL DOWN GP66 T81 +1 2 3 4 5 6 7 8 GP32 GP34 GP36 GP38 SW51 GP33 GP35 GP37 GP39 VCC-3.3V _ GP32 GP34 GP36 GP38 VCC-3.3V CN51 GP33 GP35 GP37 GP39 _ VCC-3.3V
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Original
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AP7331-ADJ
220uH
220uF/35V/LESR
100nF
MBRS140T3
220pF
MC34063A
LD43B
ld33b
LD45B
RN66
25p80
LD12B
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PDF
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5SMX12K1701
Abstract: No abstract text available
Text: VRRM = IF = 1700 V 150 A Fast-Diode Die 5SLX 12K1711 Die size: 11.9 x 11.9 mm Doc. No. 5SYA1662-01 Feb. 05 • • • • Fast and soft reverse-recovery Low losses High SOA Passivation: SIPOS Nitride plus Polyimide Maximum rated values 1 Parameter Symbol
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Original
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12K1711
5SYA1662-01
CH-5600
5SMX12K1701
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PDF
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12K12
Abstract: 5SLX12F1200
Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1273 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1633-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area
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Original
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12K1273
CH-5600
12K12
5SLX12F1200
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-02 Dez 12 • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values
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Original
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12K1280
CH-5600
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PDF
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12K1280
Abstract: No abstract text available
Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1280 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1319-01 Nov 10 • • • • Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation : Silicon Nitride plus Polyimide Maximum rated values
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Original
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12K1280
CH-5600
12K1280
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PDF
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IGBT abb datasheets
Abstract: 5SMX12K1701 abb 800
Text: VRRM = IF = 1700 V 150 A Fast-Diode Die 5SLX 12K1711 Die size: 11.9 x 11.9 mm Doc. No. 5SYA1662-01 July 04 • • • • Fast and soft reverse-recovery Low losses Rugged SOA safe operating area Passivation: SIPOS Nitride plus Polyimide Maximum rated values
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Original
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12K1711
5SYA1662-01
CH-5600
IGBT abb datasheets
5SMX12K1701
abb 800
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1323-02 11 02 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values Parameter Collector-emitter voltage
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Original
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12K1721
CH-5600
12K1721
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 100 A IGBT-Die 5SMY 12K1201 Die size: 11.9 x 11.2 mm Doc. No. 5SYA 1635-00 Mar 06 • Ultra low loss thin IGBT die • Highly rugged SPT+ design • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage Symbol Conditions
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Original
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12K1201
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 PRELIMINARY Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-01 Aug 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide
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Original
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12K1280
5SYA1308-01
CH-5600
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PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1274 Die size: 11.0 x 11.0 mm Doc. No. 5SYA 1303-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area
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Original
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12K1274
CH-5600
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: Data Sheet, Doc. No. 5SYA 1323-03 04 14 5SMY 12K1721 IGBT-Die VCE = 1700 V IC = 100 A Ultra low loss thin IGBT die Highly rugged SPT+ design Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Maximum rated values 1 Parameter Collector-emitter voltage
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Original
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12K1721
CH-5600
|
PDF
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 75 A IGBT-Die 5SMX 12K1280 Die size: 11.0 x 11.0 mm Doc. No. 5SYA1308-03 04 14 • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications
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Original
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12K1280
5SYA1308-03
CH-5600
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PDF
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MP05288.01
Abstract: GPS 634R
Text: Thin Film Chip Resistor 0805 Features • • • • Thin Film NiCr resistance element Precision tolerance from ±0.1% Extremly low TCR from ±5 to ±50 PPM/°C Special packaging 1,000 pcs. / 2,000 pcs. per reel available Application Medical equipment
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Original
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element14
MP05288.01
GPS 634R
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PDF
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R1008-QB
Abstract: QFN 7X7 free circuit diagram of rf id MTTF bav99 12k1 r1008 5R62 BAV99 MMBT3904 MMBT3906
Text: 35.0-45.0 GHz GaAs Receiver QFN, 7x7 mm R1008-QB March 2007 - Rev 21-Mar-07 Features Sub-harmonic Receiver Integrated LNA, Image Reject Mixer, LO Doubler/Buffer +2.0 dBm LO Drive Level 8.0 dB Conversion Gain 4.0 dB NF +5.0 dBm Input Third Order Intercept IP3
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Original
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R1008-QB
21-Mar-07
XR1008-QB
R1008-QB
QFN 7X7
free circuit diagram of rf id
MTTF bav99
12k1
r1008
5R62
BAV99
MMBT3904
MMBT3906
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PDF
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Untitled
Abstract: No abstract text available
Text: Low Power PCM Repeaters ANALOG DEVICES □ RPT-86/RPT-87 FEATURES • • • • • w ithT I 1,544Mbit/s , CEPT/E1 (2.048Mbit/s), and T1C (3.152Mbit/s) systems. Low Power Consumption (56mW) Single-Supply Operation Wide Data Rate Range <100kbit/s to >3Mbit/s
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OCR Scan
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RPT-86/RPT-87
544Mbit/s)
048Mbit/s)
152Mbit/s)
100kbit/s
RPT-87)
RPT-86/RPT-87
RPT-86
RPT-87
RPT-86/87
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PDF
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caller id converter dtmf to fsk
Abstract: V23 FSK Japan ring oscillator
Text: M ITEL Calling Number Identification Circuit Advance Information CNIC1.1 S E M IC O N D U C T O R Features • D S5035_ ISSUE 3_ N ovem ber 1998 1200 baud Bell 202 and CCITT V.23 Frequency Shift Keying (FSK) demodulation
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OCR Scan
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GR-30-CORE,
SR-TSV-002476,
TIA/EIA-716
MT88E43
MT8841
MT88E41
MT88E39
S5035_
MT88E39
7APR95
caller id converter dtmf to fsk
V23 FSK Japan
ring oscillator
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PDF
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BELLCORE FSK
Abstract: caller id converter dtmf DS5157 tda 1204
Text: CMOS MT88E43B Extended Voltage Calling Number Preliminary Information Identification Circuit 2 DS5157 Features • • • • • • • • • • • Compatible with: • British Telecom BT SIN227 & SIN242 • U.K.’s Cable Communications Association
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Original
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MT88E43B
DS5157
SIN227
SIN242
E/312
GR-30-CORE
TR-NWT-000030)
SR-TSV-002476
-40dBV
MT88E43B
BELLCORE FSK
caller id converter dtmf
DS5157
tda 1204
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PDF
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MT88E43AS
Abstract: block diagram of ic 555 as fsk generator MT8841 bt
Text: CMOS MT88E43 Extended Voltage Calling Number Identification Circuit 2 Features • ISSUE 3 Compatible with: Ordering Information MT88E43AE 24 Pin Plastic DIP 0.6 inch package only MT88E43AS 24 Pin SOIC -40 °C to +85 °C • • • British Telecom (BT) SIN227 & SIN242
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Original
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MT88E43
MT88E43AE
MT88E43AS
SIN227
SIN242
E/312
GR-30-CORE
TR-NWT-000030)
SR-TSV-002476
-40dBV
block diagram of ic 555 as fsk generator
MT8841 bt
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PDF
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Arcol wirewound resistor
Abstract: TI002 Arcol HS50 NHS300 HS75 1K F hs50 100 1 TI005 TI006 HS300 ARCOL 19K36
Text: HEATSINK RANGE TECHNICAL INFORMATION LAST REVISED 01 NOV 2001 CONTENTS Critical Resistance TI002 Critical Resistance TI005 Critical Voltage TI002 Definition of Terms TI005 Derating Curve HS TI007 Electromagnetic Compatibility (EMC) TI009 Heatsink Selection
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Original
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TI002
TI005
TI007
TI009
TI001
TI003
TI006
Arcol wirewound resistor
TI002
Arcol HS50
NHS300
HS75 1K F
hs50 100 1
TI005
TI006
HS300 ARCOL
19K36
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PDF
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59012 h 331
Abstract: No abstract text available
Text: r to 61 41 65 45 = = = = 1% 1% 5% 5% Tol. Tol. Tol. Tol. on a miniReel in a miniBag on a miniReel in a miniBag Size Code 2 3 5 6 = = = = 0402 0603 0805 1206 Dimensions L x W : 7 = 1210 8 = 2010 9 = 2512 C ase Resistor value Code in £1 — { Use code from product chart)
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OCR Scan
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22M12
10M12
22M12
59012 h 331
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PDF
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