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    12V 20A WITH FET Search Results

    12V 20A WITH FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D1U54T-M-2500-12-HB4C Murata Manufacturing Co Ltd 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR Visit Murata Manufacturing Co Ltd
    TMPM4GQF15FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP144-2020-0.50-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4GRF20FG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP176-2020-0.40-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4KMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM4MMFWAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M4 processor with FPU Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation

    12V 20A WITH FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C4532X5R0J107MT

    Abstract: ip1001 inductor 1812 footprint dimension ERJ8GEY0R00 5600uF Isotek C3225X5R1C106KT
    Text: PD - 94336c iP1001 Full Function Synchronous Buck Power Block Integrated Power Semiconductors, Control IC & Passives Features • • • • • • • • • • 3.3V to 12V input voltage1 20A maximum load capability, with no derating up to TPCB = 90°C


    Original     		PDF 94336c iP1001 200kHz 300kHz iP1001 C4532X5R0J107MT inductor 1812 footprint dimension ERJ8GEY0R00 5600uF Isotek C3225X5R1C106KT

    marking s4 diode smt

    Abstract: isotek
    Text: PD - 94336 iP1001 Full Function Synchronous Buck Power Block Integrated Power Semiconductors, Control IC & Passives Features • • • • • • • • • • 3.3V to 12V input voltage1 20A maximum load capability, with no derating up to TPCB = 90°C


    Original     		PDF iP1001 200kHz 300kHz iP1001 marking s4 diode smt isotek

    marking s4 diode smt

    Abstract: C4532X5R0J107MT Isotek 1206B104K500N
    Text: PD - 94336a iP1001 Full Function Synchronous Buck Power Block Integrated Power Semiconductors, Control IC & Passives Features • • • • • • • • • • 3.3V to 12V input voltage1 20A maximum load capability, with no derating up to TPCB = 90°C


    Original     		PDF 94336a iP1001 200kHz 300kHz iP1001 20Aurves marking s4 diode smt C4532X5R0J107MT Isotek 1206B104K500N

    N15N

    Abstract: 470uF/ 25V capacitor isotek JP-31 C4532X5R0J107MT 7343 footprint N15-N
    Text: PD - 94336b iP1001 Full Function Synchronous Buck Power Block Integrated Power Semiconductors, Control IC & Passives Features • • • • • • • • • • 3.3V to 12V input voltage1 20A maximum load capability, with no derating up to TPCB = 90°C


    Original     		PDF 94336b iP1001 200kHz 300kHz iP1001 N15N 470uF/ 25V capacitor isotek JP-31 C4532X5R0J107MT 7343 footprint N15-N

    Isotek

    Abstract: 14M11 Ga FET marking 1D
    Text: PD - 94336 iP1001 Full Function Synchronous Buck Power Block Integrated Power Semiconductors, Control IC & Passives Features • • • • • • • • • • 3.3V to 12V input voltage1 20A maximum load capability, with no derating up to TPCB = 90°C


    Original     		PDF iP1001 200kHz 300kHz iP1001 EIA-481 Isotek 14M11 Ga FET marking 1D

    ltc1639

    Abstract: diode d811 LTC1639-1CS8 DC444 Si7456DP Full-bridge converter mosfet 4800 RES 16K 025W 5 pe-68386 6.7UH
    Text: DC444 DESCRIPTION QUICK START GUIDE Demo Circuit 444 provides an isolated 12V/20A from a 36 to 72VDC source. DC444 utilizes the LTC1922 controller to implement a zero voltage switched ZVS , phase shift, full-bridge converter with synchronous rectification. Adaptive ZVS circuitry controls the turn-on


    Original     		PDF DC444 2V/20A 72VDC DC444 LTC1922 UL1950 EN60950. optio-R050-G ltc1639 diode d811 LTC1639-1CS8 Si7456DP Full-bridge converter mosfet 4800 RES 16K 025W 5 pe-68386 6.7UH

    ED 83A

    Abstract: 12v 20A WITH FET
    Text: Y FET US CU R AG P ENCY AP RL-2252 IEC-950 PENDING ED SA RO V 50/60 Hz TRANSFORMERS ALL/TRAN Class 2 Primaries are designed to be used simultaneously. That is, they must be used either series or parallel connected as one winding . 7 7 6 115V 50/60 Hz


    Original     		PDF IEC-950 RL-2252 UL1585 RL-2250 4000VRMS. RL-2252 RL-2252-24/12 025SQ 038SQ ED 83A 12v 20A WITH FET

    MP86981

    Abstract: 20A buck regulator ic marking hs 12V 20A voltage regulators MP869 MP86981DU
    Text: MP86981 20A, 27V Intelli-Phase Solution Single IC with Integrated HS/LS FETs and Driver The Future of Analog IC Technology DESCRIPTION FEATURES The MP86981 is a monolithic Half Bridge with built in internal power MOSFETs and gate drivers. It achieves 20A continuous output


    Original     		PDF MP86981 MP86981 100KHz MO-229, 20A buck regulator ic marking hs 12V 20A voltage regulators MP869 MP86981DU

    AO4456

    Abstract: 24V 20A SMPS SMPS 24V 24v 5a smps SMPS 30v 20a
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AO4456 AO4456 00A/us 24V 20A SMPS SMPS 24V 24v 5a smps SMPS 30v 20a

    AO4456

    Abstract: No abstract text available
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AO4456 AO4456 Drain-Sou25 00A/us

    Untitled

    Abstract: No abstract text available
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AO4456 AO4456/L AO4456 AO4456L -AO4456L 00A/us

    Untitled

    Abstract: No abstract text available
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AO4456 AO4456/L AO4456 AO4456L -AO4456L 00A/us

    ao4456

    Abstract: No abstract text available
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AO4456 AO4456 00A/us

    AO4456

    Abstract: No abstract text available
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in


    Original     		PDF AO4456 AO4456

    AO4456

    Abstract: No abstract text available
    Text: AO4456 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AO4456 AO4456

    AOL1412L

    Abstract: SMPS 24V AOL1412 24v 5a smps
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AOL1412 AOL1412 AOL1412L 00A/us SMPS 24V 24v 5a smps

    mosfet aol1412

    Abstract: No abstract text available
    Text: AOL1412 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AOL1412 AOL1412 mosfet aol1412

    Untitled

    Abstract: No abstract text available
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AOL1412 AOL1412 AOL1412L 00A/us

    Untitled

    Abstract: No abstract text available
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AOL1412 AOL1412 00A/us

    AOL1704

    Abstract: No abstract text available
    Text: AOL1704 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in


    Original     		PDF AOL1704 AOL1704 0E-05

    Untitled

    Abstract: No abstract text available
    Text: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AOD490 AOD490 O-252 000A/us

    AOL1702

    Abstract: No abstract text available
    Text: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AOL1702 AOL1702 AOL1702L 000A/us 0E-06

    aol1412

    Abstract: No abstract text available
    Text: AOL1412 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1412 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AOL1412 AOL1412

    AOL1702

    Abstract: SRFE
    Text: AOL1702 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOL1702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AOL1702 AOL1702 SRFE