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    SRFE Price and Stock

    Vishay Beyschlag NTCASRFE3C90406

    THERMISTOR NTC 10KOHM 3984K
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    DigiKey NTCASRFE3C90406 Bulk 300
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    Intel Corporation CL8068404165400S RFEK

    MPU CISC 64-Bit 1.6GHz 1440-Pin FCBGA Tray - Trays (Alt: CL8068404165400S R)
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    Avnet Americas CL8068404165400S RFEK Tray 11 Weeks 1
    • 1 $287.1685
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    Mouser Electronics CL8068404165400S RFEK
    • 1 $302.58
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    Bristol Electronics CL8068404165400S RFEK 30
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    EBV Elektronik CL8068404165400S RFEK 5 Weeks 1
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    Omega Engineering SRFE-12-150

    ENCLOSURE HEATERS - Bulk (Alt: SRFE-12-150)
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    Avnet Americas SRFE-12-150 Bulk 1
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    Intel Corporation CL8068404165100S RFEG

    MPU CISC 64-Bit 2GHz 1440-Pin FCBGA Tray - Bulk (Alt: CL8068404165100S R)
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    Avnet Americas CL8068404165100S RFEG Bulk 8 Weeks 1
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    Mouser Electronics CL8068404165100S RFEG 1
    • 1 $563.21
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    EBV Elektronik CL8068404165100S RFEG 5 Weeks 1
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    Vishay Intertechnologies NTCASRFE3C90406

    NTC Ice Cube sensor 10K 380mm connector (Alt: NTCASRFE3C90406)
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    Avnet Americas NTCASRFE3C90406 15 Weeks 300
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    Newark NTCASRFE3C90406 Bulk 300
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    SRFE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AO4456

    Abstract: No abstract text available
    Text: AO4456 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AO4456 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AO4456 AO4456

    AON6718L

    Abstract: No abstract text available
    Text: AON6718L 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is ideally suited for use as a low side switch in CPU core


    Original     		PDF AON6718L AON6718L

    AO4944

    Abstract: diode G1 24v 5a smps
    Text: AO4944 Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM The AO4944 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge. This device is suitable for use as a low and


    Original     		PDF AO4944 AO4944 diode G1 24v 5a smps

    AO4708

    Abstract: No abstract text available
    Text: AO4708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AO4708 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AO4708 AO4708 AO4708L Integ50 000A/us 0E-06

    7716 mosfet

    Abstract: AON6708
    Text: AON6708 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM The AON6708/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON and low gate charge.This device is suitable for use as a low side


    Original     		PDF AON6708 AON6708/L AON6708 AON6708L -AON6708L 7716 mosfet

    AON7702

    Abstract: No abstract text available
    Text: AON7702 30V N-Channel MOSFET SRFET TM General Description Features SRFETTM AON7702 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AON7702 AON7702 VoltageON7702

    SRFE

    Abstract: AO4720L 21A66
    Text: AO4720L 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET The AO4720L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side


    Original     		PDF AO4720L AO4720L SRFE 21A66

    ao4456

    Abstract: AO4456l 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31
    Text: AO4456 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AO4456/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AO4456 AO4456/L AO4456 AO4456L -AO4456L 7716 mosfet 24V 20A SMPS 30V 20A smps TYP31

    Untitled

    Abstract: No abstract text available
    Text: AON6754 30V N-Channel AlphaMOS General Description Product Summary • Latest Trench Power AlphaMOS αMOS LV technology • Integrated Schottky Diode (SRFET) • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant


    Original     		PDF AON6754

    aon6718

    Abstract: AON6718L
    Text: AON6718L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON6718L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is


    Original     		PDF AON6718L AON6718L aon6718

    AOL1718

    Abstract: M2975
    Text: AOL1718 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AOL1718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is


    Original     		PDF AOL1718 AOL1718 M2975

    aon7700l

    Abstract: AON7700 Mosfet AON7700
    Text: AON7700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AON7700/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AON7700 AON7700/L aon7700l AON7700 Mosfet AON7700

    AO4726

    Abstract: L083 AO4726L
    Text: AO4726 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4726/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON and low gate charge. This device is suitable for use as a low side FET in


    Original     		PDF AO4726 AO4726/L AO4726 AO4726L -AO4726L Figure10: L083

    AON7702A

    Abstract: No abstract text available
    Text: AON7702A 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AON7702A uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching


    Original     		PDF AON7702A AON7702A

    AO4712

    Abstract: No abstract text available
    Text: AO4712 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET The AO4712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side


    Original     		PDF AO4712 AO4712 00A/us Circuit125

    aon6718

    Abstract: No abstract text available
    Text: AON6718 30V N-Channel MOSFET SRFET General Description TM Product Summary TM SRFET AON6718 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is ideally suited for use as a low side switch in CPU core


    Original     		PDF AON6718 AON6718

    aon6704

    Abstract: aon6790
    Text: AON6704 30V N-Channel MOSFET SRFET General Description TM Product Summary SRFETTM AON6704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AON6704 AON6704 AON6790 aon6790

    mj8050

    Abstract: AOD4112
    Text: AOD4112 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM The AOD4112 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent R DS ON ,and low gate charge. This device is suitable for use as a low side FET in


    Original     		PDF AOD4112 AOD4112 O-252 mj8050

    AOD4110

    Abstract: No abstract text available
    Text: AOD4110 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD4110 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AOD4110 AOD4110 O-252 1E-04 Figure15:

    AO4714

    Abstract: No abstract text available
    Text: AO4714 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AO4714 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,


    Original     		PDF AO4714 AO4714 Figure10:

    AOL1704

    Abstract: No abstract text available
    Text: AOL1704 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AOL1704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in


    Original     		PDF AOL1704 AOL1704 0E-05

    AO4930

    Abstract: No abstract text available
    Text: AO4930 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AO4930 uses advanced trench technology to provide excellent R DS ON and low gate charge. The two MOSFETs make a compact and efficient switch and


    Original     		PDF AO4930 AO4930

    Untitled

    Abstract: No abstract text available
    Text: AO4712 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET The AO4712/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side


    Original     		PDF AO4712 AO4712/L AO4712 AO4712L -AO4712L 00A/us

    Untitled

    Abstract: No abstract text available
    Text: AOD490 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features The AOD490 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS, load


    Original     		PDF AOD490 AOD490 O-252 000A/us