1350 TRANSISTOR Search Results

1350 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

1350 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
1450 transistor Abstract: 1350 transistor 1314AB60 Text: R.1.A.052699-PHAN 1314AB60 60 Watts PEP, 25 Volts, Class AB Linear 1350 – 1400 MHz ADVANCED RELEASE GENERAL DESCRIPTION The 1314AB60 is a COMMON EMITTER transistor capable of providing 60 Watts of Class AB, RF output power over the band 1350-1400 MHz. This	Original	052699-PHAN 1314AB60 1314AB60 250mA. 1450 transistor 1350 transistor	PDF
BC52 Abstract: No abstract text available Text: Medium power general purpose transistors NPN medium power general purpose transistors SOT223 SC-73 SOT89 (SC-62) DFN2020-3 (SOT1061) 6.5 x 3.5 x 1.65 4.5 x 2.5 x 1.5 2.0 x 2.0 x 0.65 1350 1350 1100 Package M3D109 Size (mm) Ptot (mW) Polarity NPN VCEO (V)	Original	OT223 SC-73) SC-62) DFN2020-3 OT1061) M3D109 BCP68 BC868 BC68PA BC68-25PA BC52	PDF
transistor 1850 Abstract: No abstract text available Text: e PTB 20156 8 Watts, 1350–1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP	Original	1-877-GOLDMOS 1301-PTB transistor 1850	PDF
Untitled Abstract: No abstract text available Text: Model 511065 COAXIAL RESONATOR OSCILLATOR 1350 MHz Features ! ! ! ! Low Phase Noise Bipolar Transistor Rugged Construction for Extreme Environmental Conditions High Frequency Stability Maximum Ratings Voltage Tuning Option Specifications CHARACTERISTIC TYPICAL	Original		PDF
Untitled Abstract: No abstract text available Text: PTB20156B NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE 320 2L FLG DESCRIPTION: The ASI PTB20156B is designed for Class C, Common Base both CW and PEP Applications from 1350 MHz to 1850 MHz. FEATURES INCLUDE: • POUT 8.0 W  Gain 6.0 dB min.  Silicon Nitride Passivated	Original	PTB20156B PTB20156B	PDF
MSC72166 Abstract: 400X Text: MSC72166 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MSC72166 is Designed for High Power Pulsed IFF Avionics Applications. PACKAGE STYLE .400X.500 COMMON BASE MAXIMUM RATINGS IC 40 A VCC 50 V PDISS 1350 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +150 C	Original	MSC72166 MSC72166 400X	PDF
MRF157 Abstract: No abstract text available Text: MRF157 POWER FIELD EFFECT TRANSISTOR DESCRIPTION: PACKAGE STYLE .900 2L SQ The ASI MRF157 is an Enhancement-Mode N-Channel MOS designed for linear large-signal output stages to 80 MHz. MAXIMUM RATINGS ID 60 Adc VDSS 125 V VDGO 125 V VGS ±40 V PDISS 1350 W @ TC = 25 °C	Original	MRF157 MRF157	PDF
5v dpdt relay Abstract: 10A relay 9 Volt DPDT Relay tyco mil relay relay studs Text: 1350 Series AC Voltage Level Sensor, Relay Output Product Facts • ■ ■ Standard models combine AC 400 Hz. voltage-sensing circuit with 2A DPDT output relay. Various applications ■ Motor protection ■ Ground support equipment ■ Low or high line alarms	Original	150Vac 5v dpdt relay 10A relay 9 Volt DPDT Relay tyco mil relay relay studs	PDF
f541m43b Abstract: 2N2040 transistor D210 transistor s2p WL30 ATF-54143 ATF541M4 ATF551M4 BCV62 TL34 Text: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725–5.825 GHz Applications using the Avago ATF-541M4 Enhancement Mode PHEMT Application Note 1350 Introduction Avago Technologies’ ATF-541M4 is a low noise high intercept point enhancement mode PHEMT designed	Original	ATF-541M4 ATF-541M4 5988-9004EN f541m43b 2N2040 transistor D210 transistor s2p WL30 ATF-54143 ATF541M4 ATF551M4 BCV62 TL34	PDF
TRANSISTOR W25 Abstract: TL39 Phycomp TL42 TL34 ATF-54143 ATF-541M4 ATF-551M4 BCV62 w21 transistor Text: High Intercept Point Driver/Low Noise Amplifiers for 5.125–5.325 GHz and 5.725– 5.825 GHz Applications using the Agilent ATF-541M4 Enhancement Mode PHEMT Application Note 1350 to its 400 micron equivalent, the ATF-551M4, the ATF-541M4 provides greater power output with	Original	ATF-541M4 ATF-551M4, ATF-54143 SC-70 ATF-541M4) 5988-9004EN TRANSISTOR W25 TL39 Phycomp TL42 TL34 ATF-54143 ATF-551M4 BCV62 w21 transistor	PDF
Untitled Abstract: No abstract text available Text: 1350 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)40m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)60’ I(CBO) Max. (A)10uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.	Original		PDF
SEMICONDUCTOR J598 Abstract: j598 j325 J280 J895 J739 Multicomp capacitor ATC800B0R8BT500XT Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 2110-mployees, MRF8S21172H SEMICONDUCTOR J598 j598 j325 J280 J895 J739 Multicomp capacitor ATC800B0R8BT500XT	PDF
SEMICONDUCTOR J598 Abstract: j598 ATC800B0R8BT500XT ATC800B J739 Text: Freescale Semiconductor Technical Data Document Number: MRF8S21172H Rev. 0, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172H SEMICONDUCTOR J598 j598 ATC800B0R8BT500XT ATC800B J739	PDF
transistors BC 458 Abstract: BC 458 transistor BC 458 25C1740 A114 A115 AN1955 C101 JESD22 MRF7S21150HR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to	Original	MRF7S21150H MRF7S21150HR3 MRF7S21150HSR3 MRF7S21150HR3 transistors BC 458 BC 458 transistor BC 458 25C1740 A114 A115 AN1955 C101 JESD22	PDF

Untitled Abstract: No abstract text available Text: Document Number: MRF8S21172H Rev. 1, 3/2012 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF8S21172HR3 MRF8S21172HSR3 Designed for W-CDMA and LTE base station applications with frequencies	Original	MRF8S21172H MRF8S21172HR3 MRF8S21172HSR3 MRF8S21172HR3	PDF
J717 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to	Original	MRF7S21150H MRF7S21150HR3 MRF7S21150HSR3 MRF7S21150HR3 J717	PDF
A114 Abstract: A115 AN1955 C101 JESD22 MRF7S21150HR3 MRF7S21150HSR3 J239 J508 Vishay capacitor axial Text: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 0, 11/2007 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to	Original	MRF7S21150H MRF7S21150HR3 MRF7S21150HSR3 MRF7S21150HR3 A114 A115 AN1955 C101 JESD22 MRF7S21150HSR3 J239 J508 Vishay capacitor axial	PDF
philips power transistor bd139 Abstract: bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd Text: AN10405 Increased circuit efficiency, less required board space and saved money by replacing power transistors by low VCEsat BISS transistors Rev. 01.00 — 06 January 2006 Application note Document information Info Content Keywords Bipolar transistors, BISS, low VCEsat, PBSS, power transistors	Original	AN10405 philips power transistor bd139 bd139 smd ksh200 equivalent power transistors cross reference TRANSISTOR REPLACEMENT table for transistor AN10405 smd for bd139 BD136 SMD TRANSISTOR bd435 smd BD131 smd	PDF
Untitled Abstract: No abstract text available Text: NGTB40N135IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering	Original	NGTB40N135IHRWG NGTB40N135IHR/D	PDF
RF POWER TRANSISTOR NPN Abstract: No abstract text available Text: ERICSSON ^ PTB 20156 8 Watts, 1350-1850 MHz Microwave Power Transistor Description The 20156 is an NPN, common base RF power transistor intended for 22 Vdc operation from 1350 to 1850 MHz. Rated at 8 watts minimum output power, it may be used for both CW and PEP	OCR Scan		PDF
schematic diagram ac 150 kva generator Abstract: SAMI Star LTV 236 wq Circuit Diagram of Fan Speed Control with potenti ALLEN-BRADLEY POTENTIOMETER 81E intel 8085 microprocessor stromberg 800 kva inverter circuit diagrams SEMICONDUCTORS GENERAL CATALOG TRANSISTORS THYRISTORS DIODES LEDS Diode Thyristor 800 kva inverter diagrams Text: Aiien-Bradiey Bulletin 1350 Adjustable Frequency AC Motor Drives by Stromberg Instruction and Maintenance Manual For Bulletin 1350 Non-Regenerative Drive sizes: 50 KVA to 1000 KVA @ 460V AC 58 KVA to 1340 KVA @ 575V AC TABLE OF CONTENTS SECTION LIST OF TITLE	OCR Scan		PDF
N4050 Abstract: 1350 transistor Text: ERICSSON $ PTB 20156 8 Watts, 1350-1850 MHz Microwave Power Transistor Preliminary Key Features Description • • • • • The 20156 is a class C, NPN, common base RF PowerTransistor intended for 22 VDC operation across the 1350 -1850 MHz frequency band. It is rated at 8 Watts minimum output power	OCR Scan		PDF
AY-3-1350 Abstract: chime circuit musical door bell Top Octave Synthesizer GENERAL INSTRUMENT ay-3-1350 musical bell chime hallelujah Text: .INIKAI IN SIK lJM f NI AY-3-1350 Tunes Synthesizer FEATURES • 25 D ifferent Tunes Plus 3 Chimes ■ Mask Program m able w ith C ustom er Specified Tunes fo r Toys, Musical Boxes, etc. ■ M inimal External C om ponents ■ Autom atic S w itch-O ff Signal at End o f Tune fo r Power Savings	OCR Scan	AY-3-1350 AY-3-1350 chime circuit musical door bell Top Octave Synthesizer GENERAL INSTRUMENT ay-3-1350 musical bell chime hallelujah	PDF
AY-3-1350 Abstract: chime circuit GENERAL INSTRUMENT ay-3-1350 musical door bell musical bell jingle circuit diagram of split ac door bell hallelujah 1760Hz Text: AY-3-1350 Tunes Synthesizer FEATURES PIN C O N FIG U R A TIO N • 25 D ifferent Tunes Pius 3 Chimes ■ Mask Program m able w ith C ustom er Specified Tunes fo r Toys, M usical Boxes, etc. ■ M inim al External C om ponents ■ A utom atic S w itch-O ff Signal at End o f Tune fo r Power Savings	OCR Scan	AY-3-1350 AY-3-1350 -2000//f 22/jf chime circuit GENERAL INSTRUMENT ay-3-1350 musical door bell musical bell jingle circuit diagram of split ac door bell hallelujah 1760Hz	PDF

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1350 TRANSISTOR Search Results

1350 TRANSISTOR Result Highlights (5)

1350 TRANSISTOR Datasheets Context Search

1450 transistor

BC52

transistor 1850

Untitled

Untitled

MSC72166

MRF157

5v dpdt relay

f541m43b

TRANSISTOR W25

Untitled

SEMICONDUCTOR J598

SEMICONDUCTOR J598

transistors BC 458

Untitled

J717

A114

philips power transistor bd139

Untitled

RF POWER TRANSISTOR NPN

schematic diagram ac 150 kva generator

N4050

AY-3-1350

AY-3-1350