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    140N10P Search Results

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    140N10P Price and Stock

    Littelfuse Inc IXFH140N10P

    MOSFET N-CH 100V 140A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXFH140N10P Tube 306 1
    • 1 $9.25
    • 10 $9.25
    • 100 $5.79933
    • 1000 $5.00651
    • 10000 $5.00651
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    Newark IXFH140N10P Bulk 300
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    • 1000 $5.25
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    RS IXFH140N10P Bulk 8 Weeks 30
    • 1 -
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    • 100 $7.74
    • 1000 $7.74
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    Littelfuse Inc IXTT140N10P

    MOSFET N-CH 100V 140A TO268
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTT140N10P Tube 1
    • 1 $8.64
    • 10 $8.64
    • 100 $6.05967
    • 1000 $6.05967
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    Newark IXTT140N10P Bulk 300
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    • 1000 $6.35
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    Littelfuse Inc IXFT140N10P

    MOSFET N-CH 100V 140A TO268
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    DigiKey IXFT140N10P Tube 300
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    • 1000 $8.03763
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    Newark IXFT140N10P Bulk 300
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    RS IXFT140N10P Bulk 8 Weeks 30
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    • 100 $12.43
    • 1000 $12.43
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    Littelfuse Inc IXTQ140N10P

    MOSFET N-CH 100V 140A TO3P
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    DigiKey IXTQ140N10P Tube 300
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    • 1000 $4.70873
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    Littelfuse Inc IXFT140N10P-TRL

    MOSFET N-CH 100V 140A TO268
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    DigiKey IXFT140N10P-TRL Reel 400
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    • 1000 $6.18275
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    Newark IXFT140N10P-TRL Reel 400
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    • 1000 $6.73
    • 10000 $6.04
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    RS IXFT140N10P-TRL Bulk 8 Weeks 400
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    Find more 140N10P price and stock on Findchips.com

    140N10P Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXFH 140N10P VDSS ID25 PolarHVTM HiPerFET IXFT 140N10P Power MOSFETs = = = RDS on 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Fast Intrinsic Diode; Avalanche Rated TO-247 (IXFT) Symbol Test Conditions Maximum Ratings VDSS


    Original     		140N10P O-247 065B1 728B1 123B1 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET IXFH 140N10P IXFT 140N10P Power MOSFETs VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100


    Original     		140N10P PDF

    140N1

    Abstract: No abstract text available
    Text: PolarHVTM HiPerFET IXFH 140N10P IXFT 140N10P Power MOSFETs VDSS ID25 RDS on trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100


    Original     		140N10P 140N1 PDF

    140N10P

    Abstract: 140n10
    Text: IXTQ 140N10P IXTT 140N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = ≤ 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100


    Original     		140N10P 140N10P 140n10 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTQ 140N10P IXTT 140N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = ≤ 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 100 100


    Original     		140N10P PDF

    140n10

    Abstract: No abstract text available
    Text: Advanced Technical Information IXTQ 140N10P IXTT 140N10P PolarHTTM Power MOSFET VDSS ID25 RDS on = = = 100 V 140 A Ω 11 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		140N10P O-268 065B1 728B1 123B1 728B1 140n10 PDF

    IXTD08N100P-1A

    Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
    Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types


    Original     		PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    STW20N60

    Abstract: 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p
    Text: PolarHTTM 55V to 300V Standard Power MOSFETs Benefits of Polar HTTM and Polar HVTM This new “Polar” technology platform utilizes a patented proprietary cell design, as well as numerous process improvements that reduce RDS(on) by over 30% per unit area, while also reducing Qg by an equal


    Original     		O-220, ISOPLUS220TM, O-247, ISOPLUS247TM, O-264, ISOPLUS264TM. PLUS220 ISOPLUS220TM PLUS220SMD O-252 STW20N60 2n60p IXFB100N50 IXFB100N50P STW20N60FD IXFB100N50P TO-264 ixys ixfn100n50p IXFN48n60p IXFH30N60P ixfn100n50p PDF

    DIODE 1334

    Abstract: 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP 200N10P-88
    Text: Chip-Shortform2004.pmd PolarHTTM MOSFET, very low RDS on Type VDSS max. RDSon max. Chip type Chip size dimensions 11 Source bond wire recommended Equivalent device data sheet 26.10.2004, 12:44 V mΩ mm mils IXTD 110N055P-5S 55 21 5S 6.20 x 5.20 244 x 205


    Original     		110N055P-5S 75N10P-5S 110N10P-6S 140N10P-7S 170N10P-8S 200N10P-88 62N15P-5S 96N15P-6S 120N15P-7S 150N15P-8S DIODE 1334 1334 diode 96N20 36N30P equivalent 88N30 100N25P 36N30 IXTP75N10P IXTP IXTP IXTP IXTP PDF