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    150N10 Price and Stock

    Infineon Technologies AG BSZ150N10LS3GATMA1

    MOSFET N-CH 100V 40A 8TSDSON
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    Mouser Electronics BSZ150N10LS3GATMA1 34,118
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    Rochester Electronics BSZ150N10LS3GATMA1 31,925 1
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    Infineon Technologies AG IAUT150N10S5N035ATMA1

    MOSFET N-CH 100V 150A 8HSOF
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    IAUT150N10S5N035ATMA1 Digi-Reel 6,508 1
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    IAUT150N10S5N035ATMA1 Reel 6,000 2,000
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    Mouser Electronics IAUT150N10S5N035ATMA1 9,739
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    Rochester Electronics IAUT150N10S5N035ATMA1 22,153 1
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    Chip1Stop IAUT150N10S5N035ATMA1 Cut Tape 2,000
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    EBV Elektronik IAUT150N10S5N035ATMA1 2,000 19 Weeks 2,000
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    onsemi FDI150N10

    MOSFET N-CH 100V 57A I2PAK
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    DigiKey FDI150N10 Tube 3,034 1
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    Avnet Americas FDI150N10 Tube 17 Weeks 800
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    Mouser Electronics FDI150N10 776
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    onsemi FDP150N10A-F102

    MOSFET N-CH 100V 50A TO220-3
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    DigiKey FDP150N10A-F102 Tube 944 1
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    Mouser Electronics FDP150N10A-F102 9,310
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    STMicroelectronics STH150N10F7-2

    MOSFET N-CH 100V 110A H2PAK-2
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    DigiKey STH150N10F7-2 Digi-Reel 760 1
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    STH150N10F7-2 Cut Tape 760 1
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    Avnet Americas STH150N10F7-2 Reel 26 Weeks 1,000
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    Mouser Electronics STH150N10F7-2 503
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    STMicroelectronics STH150N10F7-2 503 1
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    Avnet Silica STH150N10F7-2 17 Weeks 1,000
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    150N10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    E 150N10

    Abstract: 150N10 100N10 IXFK100N10 IXFN150N10
    Text: HiPerFETTM Power MOSFETs VDSS IXFK100N10 150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C


    Original
    PDF IXFK100N10 IXFN150N10 O-264 ID120 E 150N10 150N10 100N10 IXFK100N10 IXFN150N10

    Tf 227

    Abstract: No abstract text available
    Text: IXFN 150N15 HiPerFETTM Power MOSFET VDSS ID25 RDS on Single MOSFET Die = 150 V = 150 A = 12.5 mW trr £ 250 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ 150 150 V V VGS VGSM


    Original
    PDF 150N15 OT-227 Tf 227

    Untitled

    Abstract: No abstract text available
    Text: 150N10F7, 150N10F7 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET VII DeepGATE™ Power MOSFETs in I2PAK and TO-220 packages Datasheet − production data Features Order codes VDS RDS on max 100 V 0.0042 Ω 150N10F7 ID PTOT 110 A 250 W 150N10F7


    Original
    PDF STI150N10F7, STP150N10F7 O-220 STI150N10F7 O-220 DocID024552

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original
    PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    150N10L

    Abstract: BSZ150N10LS3
    Text: 150N10LS3 G OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching • Optimized technology for DC/DC converters VDS 100 V RDS on ,max 15 mW ID 40 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, Logic level


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    PDF BSZ150N10LS3 IEC61249-2-21 150N10L 150N10L

    150N10F7

    Abstract: No abstract text available
    Text: 150N10F7-2 N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET VII DeepGATE™ Power MOSFET in a H2PAK-2 package Datasheet − preliminary data Features Order code VDS RDS on max 150N10F7-2 100 V 0.0039 Ω ID PTOT 110 A 250 W • 100% avalanche tested


    Original
    PDF STH150N10F7-2 STH150N10F7-2 STH150N10Fny DocID025859 150N10F7

    Untitled

    Abstract: No abstract text available
    Text: 150N10F7-2, 150N10F7 N-channel 100 V, 0.0038 Ω typ., 90 A, STripFET VII DeepGATE™ Power MOSFET in H2PAK-2 and TO-220 packages Datasheet − preliminary data Features Order codes 7$% 150N10F7-2 TAB 150N10F7 3  H2PAK-2  RDS on max 100V 0.0045 Ω


    Original
    PDF STH150N10F7-2, STP150N10F7 O-220 STH150N10F7-2 O-220 AM15557v1 DocID024552

    Untitled

    Abstract: No abstract text available
    Text: HiPerFETTM Power MOSFETs VDSS IXFK100N10 150N10 ID25 RDS on 100 V 100 A 100 V 150 A trr £ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr 12 mW 12 mW TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN VDSS TJ = 25°C to 150°C


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    PDF IXFK100N10 IXFN150N10 O-264 ID120

    C1162

    Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158
    Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)


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    PDF O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158

    sd 20n60

    Abstract: IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80
    Text: HiPerFETTM F-Series HiPerFETTM Power MOSFETs with Fast Intrinsic Diode HiPerFETTM F-Series Contents VDSS max V ID cont RDS(on) TC = 25 °C TC = 25 °C Ω A TO-247 (IXFH) PLUS247 (IXFX) ISOPLUS247TM (IXFR) TO-268 (IXFT) TO-264 (IXFK) miniBLOC (IXFN) ä IXFT 80N06


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    PDF O-247 PLUS247 ISOPLUS247TM O-268 O-264 80N06-11 76N07-11 76N07-12 100N10 170N10 sd 20n60 IXFX 44N80 20n80 60n60 9n80 C2625 power mosfet 100n20 IXFH32N50 230N10 8N80

    7n60b

    Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
    Text: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3


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    PDF AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 142-12io8 142-16io8 19-08ho1 7n60b 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80

    dinverter 768r

    Abstract: G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original
    PDF HEF4527BT HEF4531BT HEF4534BP HEF4534BT MSP-STK430X320 AD9054/PCB AD9054BST-135 IPS521G IPS521S IRL2203S dinverter 768r G7D-412S Ericsson Installation guide for RBS 6201 OMRON G7d TH3 thermistor 6201 RBS ericsson user manual TMS77C82NL reed relay rs 349-355 i ball 450 watt smps repairing RBS -ericsson 6601

    Untitled

    Abstract: No abstract text available
    Text: 150N10F7, 150N10F7 N-channel 100 V, 0.0036 Ω typ., 110 A, STripFET VII DeepGATE™ Power MOSFETs in I2PAK and TO-220 packages Datasheet − preliminary data Features Order codes VDS RDS on max 100 V 0.0042 Ω 150N10F7 ID PTOT 110 A 250 W 150N10F7


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    PDF STI150N10F7, STP150N10F7 O-220 STI150N10F7 O-220 DocID024552

    Ericsson Installation guide for RBS 6000

    Abstract: ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original
    PDF 304X264X130 CL200 TC554001FI-85L TC554001FTL-70 BMSKTOPAS900 BMSKTOPAS870 10/100TX 13X76 35X100 19X89 Ericsson Installation guide for RBS 6000 ericsson RBS 6000 series INSTALLATION MANUAL Philips Twin Eye PLN 2032 ERICSSON RBS 6000 Ericsson RBS 6000 hardware manual ericsson RBS 3206 dil relay 349-383 IGBT semikron 613 GB 123 CT ericsson RBS 6000 series Z0765A08PSC

    Untitled

    Abstract: No abstract text available
    Text: IXYS VDSS HiPerFET Power MOSFETs IXFK100N10 IXFN 150N10 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr D ^025 DS on 100 V 100 A 12 mQ 100 V 150 A 12 mQ trr <200 ns TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK IXFN vDSS


    OCR Scan
    PDF IXFK00N10 IXFN150N10 O-264 to150 OT-227 E153432

    150N10

    Abstract: No abstract text available
    Text: HiPerFET Power MOSFETs IXFK 100 N10 IXFN 150 N10 V DSS ^025 100 V 100 V 100 A 150 A D DS on 12 mQ 12 mQ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr TO-264 AA (IXFK) Symbol Test Conditions Voss T, = 25 °C tO l50°C 100 100 V Voen T, = 25°C to 150°C; RGS = 1 M£2


    OCR Scan
    PDF IXFK100N10 IXFN150N10 O-264 OT-227 E153432 IXFK10QN40 150N10

    Diode D25 N10 R

    Abstract: Diode D25 N10 P
    Text: XYS HiPerFET Power MOSFETs IXFK100N10 IXFN150 N10 v ¥ DSS ^D25 P DS on = = = 100 V 100/150 A 12 mQ 200 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr K P relim inary data TO-264 AA (IXFK) Symbol Test Conditions Maximum Ratings IXFK


    OCR Scan
    PDF IXFK100N10 IXFN150 O-264 OT-227 E153432 Diode D25 N10 R Diode D25 N10 P

    mosfet 4400

    Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS
    Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,


    OCR Scan
    PDF 100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS

    Untitled

    Abstract: No abstract text available
    Text: V DSS HiPerFET Power MOSFETs p ^D25 IXFK 100 N 10 100 V IXFN 150 N 10 100 V 100 A 150 A DS on 12 mfl 12 mfì N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t^ TO-264 AA (IXFK) Symbol Test Conditions vVDSS v DGR T0 = 25°C to 150°C 100 100


    OCR Scan
    PDF O-264 D-68623 100N10 150N10 4bflh25b

    45L40

    Abstract: D0205AA 1N3092 150L20A sd150n06p 1N3087
    Text: International göüRectifier Diodes Standard Recovery 150-200 Amps IF S M 1 lF(AV) @ TC Part Num ber Vr r m (V) 1N3111 1N3085 1N3086 1N3087 1N3088 1N3089 1N3090 1N3091 1N3092 1N5162 50 100 200 300 400 500 600 800 1000 1200 150L5A 150L10A 150L20A 150L40A


    OCR Scan
    PDF 1N3111 1N3085 1N3086 1N3087 1N3088 1N3089 1N3090 1N3091 1N3092 1N5162 45L40 D0205AA 150L20A sd150n06p

    75N1

    Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B
    Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH


    OCR Scan
    PDF 76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B

    40n80

    Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
    Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18


    OCR Scan
    PDF 5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI

    ixys ixfn 55n50

    Abstract: 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60
    Text: i , i - •*.*• - f _ _ , ; . ' x' r < r • Z* i't- y V ' -_ « i W^ | Contents V DSS max ^Otfcont Tc = 2 5 “C □ DS<ön) Tc = 25 °C V A il 60 76 0.011 0.012 200 0.006 76 0.011 0.012 200 0.006 67 75 0.025 0.02 150 0.012 170 0.01


    OCR Scan
    PDF O-247 O-247 T0-204 O-264 O-264 76N06-11 75N06-12 110N06 76N07-11 76N07-12 ixys ixfn 55n50 170n10 C1106 IXFH26N50 c1124 IXFN170N10 c1120 15N100 76N06 IXFN36n60

    mosfet 4800

    Abstract: ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30
    Text: HiPerFET Power MOSFETs N-Channel Enhancement-Mode with Fast Intrinsic Diode T jm = 150°C >- New V DSS max. V P ' d 25 Tc = 25°C A DS(on) Tc = 25°C Q typ. C rss typ. max. ° 9 typ. PF pF rts nC C iss p thJC PD max. K/W W 7 >- IXFN 200N06 60 200 0.0055


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    PDF 200N06 200N07 150N10 100N20 106N20 73N30 44N50 48N50 58N50 61N50 mosfet 4800 ixfn27n80 150N10 IXFN44N50 RD5A Co701 4800 power mosfet IXFN36n60 ixfm40n30 ixfm35n30