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    i5b2

    Abstract: No abstract text available
    Text: Preliminary KM23C16005DG CMOS MASK ROM 16M-Blt 2Mx8 /1Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16{word mode) • Fast access time Random Access: 100ns(Max.) Page Access : 30ns(Max.)


    OCR Scan     		PDF KM23C16005DG 16M-Blt /1Mx16) 100ns 15QmA 44-SQP-600 KM23C16005DG KM2SC16005DG-12 KM23C1S00SDG-15 i5b2

    Untitled

    Abstract: No abstract text available
    Text: 2N2907 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECH N ICA L DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Conpbment to 2N2222 * Collector-Emitter Voltage VCEO=-40V * Collector Dissipation Pc=625mW Ta=25°C * Hjgh Collector Current I c ^ ) =-600mA


    OCR Scan     		PDF 2N2907 2N2222 625mW -600mA 25ftC 300uS, -10uA -10mA -10vIc

    l200c

    Abstract: 25AP ZPB53BL200C
    Text: POSITIVE THERMISTORS “Posi-R” • n ic R ic o n For D eg a u ss in g C irc u it in C olor T V Z P B 31B L5R 0R ZPB 31B L7R 0B ZPB45BL100J A Posi-R fo r a d e g a u s s in g c ir c u it in c o lo r TV, u s in g c o m m e r c ia l fre q u e n c y as a p o w e r so u rc e , is a p p lic a b le to e ith e r s in g le -e le m e n t


    OCR Scan     		PDF ZPB31BL5R0R ZPB31BL7R0B ZPB45BL100J L200C ZPB46BL300H 18Ap-p 35Ap-p 25Ap-p 20Ap-fi l200c 25AP ZPB53BL200C

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRAN SISTOR M O D U LES ! HIGH POWER SWITCHING U SE INSULATED TYPE f QM75DY-HB I j QNI750Y-HB • Ic • Vcex Collector current.75A Collector-emitter voltage. 600V • hFE DC current gain. 750


    OCR Scan     		PDF QM75DY-HB QNI750Y-HB E80276 E80271 QM75DY-HB 15QmAIS

    Bfy51

    Abstract: No abstract text available
    Text: bTE T> m bbS3T31 DDSTTTD A3D H A P X 11 N AMER PHILIPS/DISCRETE II BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for general purpose industrial applications. QUICK REFERENCE DATA BFY50 Collector-base voltage open emitter


    OCR Scan     		PDF bbS3T31 BFY50 BFY51 BFY52 Bfy51

    BFY51

    Abstract: BFY50 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BS944 BFY501 BFY52 J100
    Text: II b^E J> m bbSB^l □ □2 7 7 ‘iD fl3D IAPX A N AMER PHILIPS/DISCRETE BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO -39 m etal envelopes intended fo r general purpose in d u stria l applications. Q U IC K R E F E R E N C E D A T A


    OCR Scan     		PDF D277TD BFY50 BFY51 BFY52 bfy50 BFY51 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BS944 BFY501 BFY52 J100

    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


    OCR Scan     		PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		PDF 500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711

    bc536

    Abstract: bc537
    Text: BC 537 • BC 538 NPN SILICON AF MEDIUM POWER TRANSISTORS -s- -i 4; jé . THE BC537» BC538 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC537, BC538 ARE COM­ PLEMENTARY TO THE PNP TYPE BC527, BC528


    OCR Scan     		PDF BC537Â BC538 BC537, BC527, BC528 O-92A BC537 BC536 100mA bc536 bc537

    n02a

    Abstract: lts 543 series pin diagram n03B
    Text: 19-1414; Rev0; 1/99 > k l> JX I> k l Fault-P rotected, High-Voltage S i n g l e 8-to-1 / D u a l 4-to-1 M u l t i p l e x e r s _ F e a t u r e s The MAX4508/MAX4509 are 8-to-1 and dual 4-to-1 faultprotected m ultiplexers that are pin-com patible with the


    OCR Scan     		PDF 400Qnax MAX4508/MAX4509 n02a lts 543 series pin diagram n03B

    BC537

    Abstract: BC538 BC527 BC528
    Text: BC 537 • BC 538 NPN SILICON AF MEDIUM POWER TRANSISTORS THE BC537, BC538 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC537, BC538 ARE COM­ PLEMENTARY TO THE PNP TYPE BC527, BC528


    OCR Scan     		PDF BC537, BC538 BC527, BC528 O-92A BC537 100mA BC527

    smd npn 2n2222

    Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
    Text: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.


    OCR Scan     		PDF 2PC1815L 2PC1815 10xx0. 7Z88986 smd npn 2n2222 bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200