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TE Connectivity 154N-015V-RT PRESS SENSOR;NISO,154N-015V-RT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	154N-015V-RT	Bulk			60	1 - 10 - 100 $128.55 1000 $128.55 10000 $128.55	Buy Now
Avnet Americas	154N-015V-RT	Bulk		17 Weeks	60	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Interstate Connecting Components	154N-015V-RT					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	154N-015V-RT					1 - 10 - 100 $131.69 1000 $131.69 10000 $131.69	Buy Now
Sager	154N-015V-RT				30	1 - 10 - 100 $165.87 1000 $165.87 10000 $165.87	Buy Now

15VRT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
WEIGHING SCALE 8051 Abstract: AD1175 weighing scale code using microcontroller 8051 2e21 Text: ~ ~ HighAccuracy, 22-Bit Integrating AIDConverter ANALOG DEVICES FEATURES High Resolution: 22 Bits Wide Dynamic Range: 133dB Low Nonlinearity: Integral: :t 0.5ppm max Differential: :t 0.5LSB max High Stability: Gain: :!:1ppm/oC max Zero: :to.5J.lVrC max INL: :to.01ppmrC	Original	PDF	22-Bit 133dB 01ppmrC OO25ppm/oC SSQ-122-03-G-S AD1l75) 22-PIN WEIGHING SCALE 8051 AD1175 weighing scale code using microcontroller 8051 2e21
086-56 UNC Abstract: pabi CAMH9126 Text: FEATURES MODEL NO. CAMH9126 L-Band Op. Freq. 52 dB Gain 61.7 dBm Pout 45% Efficiency VSWR, Infinity to1 Withstand AMP A L-Band Power Amplifier A .250-.252 DIA. x.40 MIN DEEP INCLUDING SUPPORT FLANGE .250-.252 x .38 SLOT .40 MIN DEEP INCLUDING SUPPORT FLANGE.	Original	PDF	CAMH9126 086-56 UNC pabi CAMH9126
266CT125-3E2A Abstract: GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A Text: AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit	Original	PDF	AN-937 500ns/div 266CT125-3E2A GBAN-PVI-1 240XT250-3EA2 HEXFET Power MOSFET designer manual CD4093 CD4093 IC details IRF540 complementary ca3103 IR7509 Toroid 3E2A
SPM6G140-060D Abstract: C 4977 IGBT DRIVER Analog Devices Brake cleaner 210C bi-directional switches IGBT ON 4977 Text: SENSITRON SEMICONDUCTOR SPM6G140-060D TECHNICAL DATA DATASHEET 4977, Rev. B Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation DESCRIPTION: A 600 VOLT, 140 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE	Original	PDF	SPM6G140-060D 500uA, SPM6G140-060D C 4977 IGBT DRIVER Analog Devices Brake cleaner 210C bi-directional switches IGBT ON 4977
SPM6G120-120D Abstract: 210C 3 pins Variable resistor 5K ohm Text: SENSITRON SEMICONDUCTOR SPM6G120-120D TECHNICAL DATA DATASHEET 4100, Rev. C Three-Phase IGBT BRIDGE, With Gate Driver and Magnetic Isolation DESCRIPTION: A 1200 VOLT, 120 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE	Original	PDF	SPM6G120-120D 500uA, SPM6G120-120D 210C 3 pins Variable resistor 5K ohm
GBAN-PVI-1 Abstract: ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary Text: Index AN-937 v.Int Gate Drive Characteristics and Requirements for HEXFET s Topics covered: Gate drive vs base drive Enhancement vs Depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit	Original	PDF	AN-937 500ns/div GBAN-PVI-1 ca3103 266CT125-3E2A IR7509 ic cd4093 oscillator with CD4093 Types dc to dc chopper zener in4148 240XT250-3EA2 IRF540 complementary
ca3103 Abstract: 2n2222 -331 Cd4093 SiHF Text: VISHAY SILICONIX Power MOSFETs Application Note AN-937 Gate Drive Characteristics and Requirements for Power MOSFETs TABLE OF CONTENTS Page Gate Drive vs. Base Drive . 2	Original	PDF	AN-937 ca3103 2n2222 -331 Cd4093 SiHF
Untitled Abstract: No abstract text available Text: MODEL NUMBER CAM H9126 L-Band Power Amplifier FEATURES • L-Band Op. Freq. • 52 dB Gain • 61 dBm Pout • 45% Efficiency AMP A A .250-.252 DIA. x.40 M IN DEEP INCLUDING SUPPORT FLANGE .250-.252 x .38 SLOT .40 M IN DEEP INCLUDING SUPPORT FLANGE. 10.50	Original	PDF	H9126
CAMH9126 Abstract: AA-75 amplifier UNC-2B 086-56 UNC 15VRT RF power amplifier MHz Text: MODEL NUMBER CAMH9126 L-Band Power Amplifier FEATURES • L-Band Op. Freq. • 52 dB Gain • 61 dBm Pout • 45% Efficiency AMP A A .250-.252 DIA. x.40 MIN DEEP INCLUDING SUPPORT FLANGE .250-.252 x .38 SLOT .40 MIN DEEP INCLUDING SUPPORT FLANGE. 10.50 MAX	Original	PDF	CAMH9126 CAMH9126 AA-75 amplifier UNC-2B 086-56 UNC 15VRT RF power amplifier MHz
HEXFET Power MOSFET designer manual Abstract: GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent Text: Application Note AN-937 Gate Drive Characteristics and Requirements for HEXFET Power MOSFETs Table of Contents Page 1. Gate Drive Vs Base Drive . 1 2. Gate Voltage Limitations . 2	Original	PDF	AN-937 500ns/div HEXFET Power MOSFET designer manual GBAN-PVI-1 266CT125-3E2A HEXFET Power MOSFET designer manual GBAN-PVI-1 TTL dm7400 CD4093 IC details CD4093 CI 7407 ic cd4093 IR2121 equivalent