Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 17400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 17400B achieves high integration, high-speed operation, and low-power
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17400B_
E2G0035-17-41
304-Word
MSM5117400B
/24-pin
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PDF
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I-7400
Abstract: tds 8920 c
Text: @ LG Semicon. Co. LTD. Features Description The GM71 V S 17400B /B L is the new generation dynamic RAM organized 4,194,304 words x 4 Bit. G M 71V (S)17400B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS
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GM71V
17400B
17400B/BL
300mil
402A7S7
I-7400
tds 8920 c
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PDF
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Untitled
Abstract: No abstract text available
Text: HB56TW433D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56TW433D is a 4 M x 32 dynamic RAM Small Outline DIMM S. O. DIMM , mounted 8 pieces of 16Mbit DRAM (HM51W 17400BTS/ BLTS) sealed in TSOP package. An outline of the HB56TW433D is
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HB56TW433D
304-word
32-bit
ADE-203Rev.
16Mbit
HM51W
17400BTS/
72-pin
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PDF
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MSM5117400
Abstract: MSM5117400B
Text: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 17400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 17400B achieves high integration, high-speed operation, and low-power
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OCR Scan
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E2G0035-17-41
MSM5117400B_
304-Word
MSM5117400B
26/24-pin
MSM5117400
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PDF
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Q67100-Q2006
Abstract: Q67100-Q982 514100BJ
Text: SIEMENS 4M X 36-Bit Dynamic RAM Module HYM 364020S/GS-60/-70 Preliminary Inform ation 4 194 304 words by 36-Bit organization alternative 8 388 608 words by 18-bit CAS-before-RAS refresh RAS-only-refresh Hidden-refresh Fast access and cycle time 60 ns access tim e
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36-Bit
364020S/GS-60/-70
18-bit)
S23SbOS
00717B3
Q67100-Q2006
Q67100-Q982
514100BJ
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PDF
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Q67100-Q2007
Abstract: Q67100-Q985
Text: SIEM EN S 8M x 36-Bit Dynamic RAM Module HYM 368020S/GS-60/-70 Prelim inary Inform ation • 24 decoupling capacitors mounted on substrate 8 388 608 words by 36-bit organization alternative 16 777 216 words by 18-bit All inputs, outputs and clocks fully
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36-Bit
368020S/GS-60/-70
18-bit)
CMOS-132
fl23SbOS
Q67100-Q2007
Q67100-Q985
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PDF
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Untitled
Abstract: No abstract text available
Text: 17400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-370A Z Rev. 1.0 Nov. 17, 1995 Description The Hitachi 17400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The 17400B offers Fast
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HM51W17400B
304-word
ADE-203-370A
mW/360
mW/324
HM51W1740
HM51W17400BS/BLS
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PDF
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Untitled
Abstract: No abstract text available
Text: ADE-203-370 Z 17400B/BL Series 4,194,304-word x 4-bit Dynamic Random Access Memory Preliminary Rev. 0.0 Mar. 23, 1995 HITACHI T he H ita c h i H M 5 1W 17 4 0 0 B /B L is a CM O S dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology
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ADE-203-370
HM51W17400B/BL
304-word
17400B/BL
300-mil
26-pin
CP-26/24DB)
mW/360
mW/324
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PDF
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27C256AG
Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Text: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series
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512kx8512k
28512A
674100H
671400H
8128B
1664H
9127H
8127H
27C256AG
4265C
514270
101AG
BK 4367
4165A
5118160
4270-D
4096A
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PDF
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Untitled
Abstract: No abstract text available
Text: • « Y U N O Ä T • 17400B,HY51 V16400B 4Ux4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this
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HY51V17400B
V16400B
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PDF
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI HY51 17400B.HY51 V16400B 4M x4, F as t Page m ode DESCRIPTION T h is fa m ily is a 16M b it d y n a m ic RAM o rg a n iz e d 4 ,1 9 4 ,3 0 4 x 4 -b it c o n fig u ra tio n w ith F ast P ag e m od e C M O S D R A M s. Fast Page m ode is a kind o f pa ge m ode w h ich is use ful fo r th e read o p e ra tio n . T h e c irc u it and pro ce ss d e sig n a llo w th is
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HY51V17400B
V16400B
A0-A11)
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PDF
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GM71CI7400
Abstract: 402u gm71c17400bj GM71C17400 17400BJ gm71c17400b
Text: @ LG Semicon. Co. LTD Description Features The 17400B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 Bit. 17400B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The 17400B/BL offers Fast
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GM71C17400B/BL
Cl7400B/BL
300mil
DDD5D42
GM71CI7400
402u
gm71c17400bj
GM71C17400
17400BJ
gm71c17400b
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PDF
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bt 33 f
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM 3.3 V, 2k-refresh HYB 17400BJ/BT -50/-60/-70 Prelim inary Inform ation 4 194 304 words by 4-bit organization 0 to 70 ‘C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version)
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3117400BJ/BT
bt 33 f
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 17400BJ -50/-60/-70 HYB 17400BT -50/-60/-70 Advanced Inform ation • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version
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5117400BJ
5117400BT
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY 4 M X 4 BIT. E A S ll^ 17400B-50/-60/-50L/-60L CMOS 4,194,304 x 4 Bit Fast Page Mode Dynamic RAM DESCRIPTION The Fujitsu 17400B is a fully decoded CMOS Dynamic RAM DRAM that contains 16,777,216 memory cells accessible in 4-bit increments. The 17400B features a “fast page” mode of operation whereby high
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MB81V17400B-50/-60/-50L/-60L
MB81V17400B
F9712
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PDF
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sem 2005 640
Abstract: No abstract text available
Text: SIEMENS 4M X 32-Bit Dynamic RAM Module HYM 324020S/GS-60/-70 Prelim inary Inform ation • 4 194 304 w ords by 32-bit organization alternative 8 388 608 words by 16-bit • Fast access and cycle time 60 ns access time 110 ns cycle time (-60 version) 70 ns access time
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32-Bit
324020S/GS-60/-70
16-bit)
324020S/G
324020S/GS-70)
sem 2005 640
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70
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1000BJ-50
1000BJ-60
1000BJ-70
1000BJL-50
1000BJL-60
1000BJL-70
514256B-50
514256B-60
514256B-70
514256BJ-50
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM 4 • DRAM - Low Voltage Versions (CMOS) Vcc= +3.3V+0.3V, Ta=0°C to +70°C Organization (Wx b ) Access Time max. (ns) Part Number Cycle Time min. (ns) Power Consumption max. (mW) Packages Standby Mode ! (CMOS level) SOJ TSOP 1.8 26P 26P 0.54 26P 26P
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B81V16400A-60
B81V16400A-70
6400A-60L
1V16400A-70L
B81V17400A-60
B81V17400A-70
7400A-60L
B81V17400A-70L
16400B-50
MB81V1640QB-60
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 17400BJ -50/-60/-70 HYB 17400BT -50/-60/-70 A d v a n c e d In fo rm a tio n • 4 194 30 4 w o rd s by 4 -b it o rg a n iz a tio n S in g le + 5 V ± 10 % sup ply • 0 to 70 C o p e ra tin g te m p e ra tu re Low p o w e r dissip a tio n
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5117400BJ
5117400BT
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PDF
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Untitled
Abstract: No abstract text available
Text: S IE M E N S 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB5116400BJ/BT-50/-60 17400BJ/BT-50/-60 HYB3116400BJ(L)/BT(L)-50/-60 17400BJ( L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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HYB5116400BJ/BT-50/-60
HYB5117400BJ/BT-50/-60
HYB3116400BJ
HYB3117400BJ(
HYB5116400
HYB3116400
HYB5117400
HYB3117400
12/1AM
P-SOJ-26/24
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PDF
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51w17400
Abstract: No abstract text available
Text: 17400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-370A Z Rev. 1.0 Nov. 17, 1995 Description The Hitachi 17400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The 17400B offers Fast
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OCR Scan
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HM51W17400B
304-word
ADE-203-370A
mW/360
mW/324
51W17400BS/BLS
51w17400
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PDF
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la6111
Abstract: No abstract text available
Text: SIEMENS 8M X 36-Bit Dynamic RAM Module HYM 368020S/GS-60/-70 P re lim in a ry In fo rm a tio n • 2 4 d e co u p lin g ca p a c ito rs m o u n te d on s u b stra te 8 388 608 w o rd s by 3 6 -b it o rg a n iz a tio n a lte rn a tiv e 16 777 216 w o rd s by 18-bit
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OCR Scan
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36-Bit
368020S/GS-60/-70
18-bit)
la6111
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PDF
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HM5117400BS7
Abstract: HM5117400BS6
Text: 17400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-369A Z Rev. 1.0 Nov. 15, 1995 Description The Hitachi 17400B is a CMOS dynamic RAM organized 4,194,304 word x 4 bit. It employs the most advanced CMOS technology for high performance and low power. The 17400B offers Fast Page Mode
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OCR Scan
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HM5117400B
304-word
ADE-203-369A
mW/550
mW/495
HM5117400BS/BLS
HM5117400BS7
HM5117400BS6
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PDF
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26-P3
Abstract: No abstract text available
Text: V ' T S V B ’ S '- ” ,tu n i* * * * M 5 M 4 V 1 7 4 0 0 B J J P .R ,R tL ' T S ,- ’. 3 1 s 7 ,-lî, - 6 S ,- Ï'S ,- « S FAST PAGE MODE 16777216-BIT 4194304-WORD BY 4-BIT DYNAMIC RAM DESCRIPTION This is a fa m ily o f 4 1 9 4 3 0 4 -w o rd b y 4 -b it d yn a m ic R AM s,
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16777216-BIT
4194304-WORD
26-P3
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PDF
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