Si4927DY
Abstract: No abstract text available
Text: SPICE Device Model Si4927DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4927DY
17-Apr-01
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Si4450DY
Abstract: No abstract text available
Text: SPICE Device Model Si4450DY Vishay Siliconix N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4450DY
17-Apr-01
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Untitled
Abstract: No abstract text available
Text: Si3434DV New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.034 @ VGS = 4.5 V 6.1 APPLICATIONS 0.050 @ VGS = 2.5 V
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Si3434DV
18-Jul-08
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cds photocell
Abstract: NORPS-12 QF-84
Text: Revision 1 2 Date 19-Oct-00 17-Apl-01 22-Sept-02 3 4 08-Feb-05 10-Sep-08 ECN 690 Revisions Description First release Color Temperature added Spectral response and R-on vs Ftc. Were added. Ftc to Lux conversion was added to output resistance curve Cap & Base changed
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19-Oct-00
17-Apl-01
22-Sept-02
08-Feb-05
10-Sep-08
NORPS-12,
QF-84
17-Apr-01
NORPS-12
2854K)
cds photocell
NORPS-12
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Si3434DV
Abstract: No abstract text available
Text: Si3434DV New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.034 @ VGS = 4.5 V 6.1 APPLICATIONS 0.050 @ VGS = 2.5 V
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Si3434DV
S-03617--Rev.
17-Apr-01
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Si4466DY
Abstract: No abstract text available
Text: SPICE Device Model Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4466DY
17-Apr-01
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Si3441DV
Abstract: 15nc15
Text: SPICE Device Model Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3441DV
17-Apr-01
15nc15
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Si3443DV
Abstract: No abstract text available
Text: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3443DV
17-Apr-01
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SI2301DS
Abstract: si2301 Si2301DS SPICE Device Model SI2301DS* equivalent
Text: SPICE Device Model Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V Rated MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si2301DS
17-Apr-01
si2301
Si2301DS SPICE Device Model
SI2301DS* equivalent
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Si6925DQ
Abstract: No abstract text available
Text: SPICE Device Model Si6925DQ Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6925DQ
17-Apr-01
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Si4412ADY
Abstract: No abstract text available
Text: SPICE Device Model Si4412ADY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4412ADY
17-Apr-01
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Si4890DY
Abstract: No abstract text available
Text: SPICE Device Model Si4890DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4890DY
17-Apr-01
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Si4884DY
Abstract: No abstract text available
Text: SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4884DY
17-Apr-01
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Si3850DV
Abstract: Si3850DV SPICE Device Model
Text: SPICE Device Model Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3850DV
17-Apr-01
Si3850DV SPICE Device Model
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Si4874DY
Abstract: 71469
Text: SPICE Device Model Si4874DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4874DY
17-Apr-01
71469
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Si3443DV
Abstract: No abstract text available
Text: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3443DV
18-Jul-08
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Si4416DY
Abstract: No abstract text available
Text: SPICE Device Model Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4416DY
17-Apr-01
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Si2308DS
Abstract: No abstract text available
Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si2308DS
17-Apr-01
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Si4425DY
Abstract: v382
Text: SPICE Device Model Si4425DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4425DY
17-Apr-01
v382
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Si3454ADV
Abstract: No abstract text available
Text: SPICE Device Model Si3454ADV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3454ADV
17-Apr-01
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Si6965DQ
Abstract: 70919
Text: SPICE Device Model Si6965DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET, Common Drain CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6965DQ
17-Apr-01
70919
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Si2315DS
Abstract: No abstract text available
Text: SPICE Device Model Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si2315DS
17-Apr-01
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Si4880DY
Abstract: No abstract text available
Text: SPICE Device Model Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si4880DY
17-Apr-01
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OZ 9907
Abstract: 34146 MLAP 414586-4 GP-719
Text: — THIS DRAWING Is UNPUBLISHED.-RELEASED MR PUBLICATION-~ IC J COPYRIGHT - !- BY TYCO ELECTRONICS CORPORATION. REVISIONS LOC D is r HM 00 ALL RIGHTS RESERVED. P LTR L M
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OCR Scan
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0U20-0644-00
0U20-0597-00
16APR01
17APR01
02MAR01
31MAR2000
OZ 9907
34146
MLAP
414586-4
GP-719
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PDF
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