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    Si4927DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4927DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4927DY 17-Apr-01 PDF

    Si4450DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4450DY Vishay Siliconix N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4450DY 17-Apr-01 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si3434DV New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.034 @ VGS = 4.5 V 6.1 APPLICATIONS 0.050 @ VGS = 2.5 V


    Original
    Si3434DV 18-Jul-08 PDF

    cds photocell

    Abstract: NORPS-12 QF-84
    Text: Revision 1 2 Date 19-Oct-00 17-Apl-01 22-Sept-02 3 4 08-Feb-05 10-Sep-08 ECN 690 Revisions Description First release Color Temperature added Spectral response and R-on vs Ftc. Were added. Ftc to Lux conversion was added to output resistance curve Cap & Base changed


    Original
    19-Oct-00 17-Apl-01 22-Sept-02 08-Feb-05 10-Sep-08 NORPS-12, QF-84 17-Apr-01 NORPS-12 2854K) cds photocell NORPS-12 PDF

    Si3434DV

    Abstract: No abstract text available
    Text: Si3434DV New Product Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET D 2.5-V Rating for 30-V N-Channel D Low rDS(on) for Footprint Area PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.034 @ VGS = 4.5 V 6.1 APPLICATIONS 0.050 @ VGS = 2.5 V


    Original
    Si3434DV S-03617--Rev. 17-Apr-01 PDF

    Si4466DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4466DY Vishay Siliconix N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4466DY 17-Apr-01 PDF

    Si3441DV

    Abstract: 15nc15
    Text: SPICE Device Model Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si3441DV 17-Apr-01 15nc15 PDF

    Si3443DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si3443DV 17-Apr-01 PDF

    SI2301DS

    Abstract: si2301 Si2301DS SPICE Device Model SI2301DS* equivalent
    Text: SPICE Device Model Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V Rated MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si2301DS 17-Apr-01 si2301 Si2301DS SPICE Device Model SI2301DS* equivalent PDF

    Si6925DQ

    Abstract: No abstract text available
    Text: SPICE Device Model Si6925DQ Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si6925DQ 17-Apr-01 PDF

    Si4412ADY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4412ADY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4412ADY 17-Apr-01 PDF

    Si4890DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4890DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4890DY 17-Apr-01 PDF

    Si4884DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4884DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4884DY 17-Apr-01 PDF

    Si3850DV

    Abstract: Si3850DV SPICE Device Model
    Text: SPICE Device Model Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si3850DV 17-Apr-01 Si3850DV SPICE Device Model PDF

    Si4874DY

    Abstract: 71469
    Text: SPICE Device Model Si4874DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4874DY 17-Apr-01 71469 PDF

    Si3443DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si3443DV 18-Jul-08 PDF

    Si4416DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4416DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4416DY 17-Apr-01 PDF

    Si2308DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2308DS Vishay Siliconix N-Channel 60-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si2308DS 17-Apr-01 PDF

    Si4425DY

    Abstract: v382
    Text: SPICE Device Model Si4425DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4425DY 17-Apr-01 v382 PDF

    Si3454ADV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3454ADV Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si3454ADV 17-Apr-01 PDF

    Si6965DQ

    Abstract: 70919
    Text: SPICE Device Model Si6965DQ Vishay Siliconix Dual P-Channel 2.5-V G-S MOSFET, Common Drain CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si6965DQ 17-Apr-01 70919 PDF

    Si2315DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2315DS Vishay Siliconix P-Channel 1.25-W, 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si2315DS 17-Apr-01 PDF

    Si4880DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4880DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4880DY 17-Apr-01 PDF

    OZ 9907

    Abstract: 34146 MLAP 414586-4 GP-719
    Text: — THIS DRAWING Is UNPUBLISHED.-RELEASED MR PUBLICATION-~ IC J COPYRIGHT - !- BY TYCO ELECTRONICS CORPORATION. REVISIONS LOC D is r HM 00 ALL RIGHTS RESERVED. P LTR L M


    OCR Scan
    0U20-0644-00 0U20-0597-00 16APR01 17APR01 02MAR01 31MAR2000 OZ 9907 34146 MLAP 414586-4 GP-719 PDF