CI 576
Abstract: No abstract text available
Text: VG26 V 18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only
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Original
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18165C
42-pin
400mil
50/60ns
1G5-0179
CI 576
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PDF
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)18165C/VG26(V)(S)18165D 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only
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Original
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18165C/VG26
18165D
42-pin
400mil
50/60ns
1G5-0179
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PDF
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only
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Original
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18165C
42-pin
400mil
50/60ns
1G5-0179
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PDF
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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Original
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18165C
42-pin
50/60ns
1G5-0158
18165CJ-5
18165CJ-6
400mil
18165CJ-5
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PDF
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Untitled
Abstract: No abstract text available
Text: 世界先進積體電路股份有限公司 Vanguard International Semiconductor Corp. Rev 1 2 Date 12/06/2000 06/01/2001 ECN 1G5-0179 901190 From 黃志凱 曾毓琳 3 10/19/2001 902563 曾毓琳 4 12/19/2002 20022298 曾毓琳 黃志凱 Origination Dept. Manager: 1313 陳瑛政
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Original
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1G5-0179
VA6087
1Mx16
18165D
600uA
130mA
550uA
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PDF
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Untitled
Abstract: No abstract text available
Text: VIS VG26 V (S)18165C/VG26(V)(S)18165D 1,048,576 x 16 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only
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Original
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18165C/VG26
18165D
42-pin
400mil
50/60ns
1G5-0179
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PDF
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18165CJ
Abstract: No abstract text available
Text: VIS VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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Original
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18165C
42-pin
50/60ns
1G5-0158
18165CJ
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PDF
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MAS 10 RCD
Abstract: No abstract text available
Text: VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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Original
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18165C
42-pin
50/60ns
1G5-0147
18165CJ-5
400mil
42-Pin
18165CJ-6
MAS 10 RCD
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PDF
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)18165C 1,048,576 x 16 - Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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Original
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18165C
42-pin
50/60ns
1G5-0158
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PDF
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TC51V18165
Abstract: TC51V18165CFT
Text: INTEGRATED TOSHIBA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT CIRCUIT TECHNICAL TC51V18165 C J/C FT - 60 SILICON GATE CMOS DATA TENTATIVE DATA 1,048,576 W O RD x 16 BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The 18165CJ/CFT is EDO (hyper page) dynamic RAM organized 1,048,576 words by 16 bits.
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OCR Scan
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TC51V18165
TC51V18165CJ/CFT
TC51V18165CJ/CFT--31
TC51V18165CJ/CFT--
TC51V18165CFT
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 18165CJ/CFT-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD x 16-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The 18165CJ/CFT is an EDO (hyper page) dynamic RAM organized as 1,048,576 words by 16 bits. The 18165CJ/CFT utilizes TOSHIBA’S CMOS silicon gate process technology as well as
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OCR Scan
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TC51V18165CJ/CFT-50
576-WORD
16-BIT
TC51V18165CJ/CFT
42-pin
50-pin
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PDF
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Untitled
Abstract: No abstract text available
Text: VG26 V (S)18165C 1 ,0 4 8 ,5 7 6 x 1 6 -Bit CMOS Dynamic RAM VIS Description The device CMOS Dynamic RAM organized as 1,048,576 words x 16 bits with extended data out access mode. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single
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OCR Scan
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18165C
42-pin
50/60ns
G5-0158
age26
18165CJ-5
400mil
42-Pin
18165CJ-6
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PDF
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