E1751E20
Abstract: EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L
Text: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-MQ 256M words 8 bits, 2133Mbps EDJ2116DEBG-MQ (128M words 16 bits, 2133Mbps) EDJ2108DEBG-JQ (256M words 8 bits, 1866Mbps) EDJ2116DEBG-JQ (128M words 16 bits, 1866Mbps) Specifications Features
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EDJ2108DEBG-MQ
2133Mbps)
EDJ2116DEBG-MQ
EDJ2108DEBG-JQ
1866Mbps)
EDJ2116DEBG-JQ
EDJ2108DEBG)
EDJ2116DEBG)
E1751E20
EDJ2108DEBG
ELPIDA DDR3 2G
DDR3 2G 1866 elpida
EDJ2108DEBG-MQ
DDR3-2133L
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j2108
Abstract: EDJ2116DEBG-JQ EDJ2108DEBG-JQ EDJ2108DEBG EDJ2116DEBG DDR3-1866L persistent write 96-ball FBGA Elpida DDR3 DDR3 2G 1866 elpida
Text: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-JQ 256M words x 8 bits,1866Mbps EDJ2116DEBG-JQ (128M words × 16 bits,1866Mbps) Specifications Features • Density: 2G bits • Organization: 32M words × 8 bits × 8 banks (EDJ2108DEBG) 16M words × 16 bits × 8 banks (EDJ2116DEBG)
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EDJ2108DEBG-JQ
1866Mbps)
EDJ2116DEBG-JQ
EDJ2108DEBG)
EDJ2116DEBG)
78-ball
96-ball
j2108
EDJ2116DEBG-JQ
EDJ2108DEBG-JQ
EDJ2108DEBG
EDJ2116DEBG
DDR3-1866L
persistent write
96-ball FBGA
Elpida DDR3
DDR3 2G 1866 elpida
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-JQ 256M words x 8 bits,1866Mbps EDJ2116DEBG-JQ (128M words × 16 bits,1866Mbps) Specifications Features • Density: 2G bits • Organization: ⎯ 32M words × 8 bits × 8 banks (EDJ2108DEBG) ⎯ 16M words × 16 bits × 8 banks (EDJ2116DEBG)
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EDJ2108DEBG-JQ
1866Mbps)
EDJ2116DEBG-JQ
EDJ2108DEBG)
EDJ2116DEBG)
78-ball
96-ball
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DDR3-1866
Abstract: IS46TR DDR3-1600 IS43TR16640A DDR3 IS43TR16128A IS43TR16640 DDR3 timing parameters IS43TR82560A 128Mx16
Text: DDR3 SDRAM Up to 1866Mbps data rate ► Applications: • Telecom/Networking Access Nodes PON OLT, DSLAM, CMTS, Wireless Aggregation Nodes Switches and Routers Packet Optical Transport Network Storage • Automotive Infotainment Telematics Driver Information Systems
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1866Mbps
96-ball
78-ball
IS43TR16640A
IS43TR81280A
IS43TR16128A
IS43TR82560A
64Mx16
128Mx8
128Mx16
DDR3-1866
IS46TR
DDR3-1600
DDR3
IS43TR16640
DDR3 timing parameters
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96-ball FBGA
Abstract: No abstract text available
Text: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)
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EDJ1108EJBG
EDJ1116EJBG
EDJ1108EJBG)
EDJ1116EJBG)
78-ball
96-ball
1866Mbps/1600Mbps/1333Mbps
96-ball FBGA
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DDR3-1866 RDIMM SPD JEDEC
Abstract: M392B5670GB0-CF8
Text: Rev. 1.01, Dec. 2010 M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin VLP Registered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M392B2873GB0
M392B5673GB0
M392B5670GB0
240pin
78FBGA
256Mbx4
256Mx72
K4B1G0446G-BC*
DDR3-1866 RDIMM SPD JEDEC
M392B5670GB0-CF8
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Untitled
Abstract: No abstract text available
Text: Rev. 1.01, Dec. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B2873GB0
M471B5673GB0
204pin
78FBGA
K4B1G0846G
128Mbx8
256Mx64
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M471B5173
Abstract: No abstract text available
Text: Rev. 1.0, Apr. 2012 M471B5173CB0 M471B1G73CB0 204pin Unbuffered SODIMM based on 4Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B5173CB0
M471B1G73CB0
204pin
78FBGA
estoppel512M
K4B4G0846C
512Mx8
1Gx64
M471B5173
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K4B4G0446D-MC
Abstract: k4b4g0446d M393B5270DH0
Text: Rev. 1.3, Jul. 2011 M393B5773DH0 M393B5273DH0 M393B5270DH0 M393B1K70DH0 M393B1K73DH0 M393B2K70DM0 240pin Registered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
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M393B5773DH0
M393B5273DH0
M393B5270DH0
M393B1K70DH0
M393B1K73DH0
M393B2K70DM0
240pin
78FBGA
K4B4G0446D-MC
k4b4g0446d
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M378B5273EB0
Abstract: K4B2G0846E-BC
Text: Rev. 1.0, Jan. 2012 M378B5773EB0 M391B5773EB0 M378B5273EB0 M391B5273EB0 240pin Unbuffered DIMM based on 2Gb E-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M378B5773EB0
M391B5773EB0
M378B5273EB0
M391B5273EB0
240pin
78FBGA
256Mbx8
512Mx64/x72
M378/91B5273EB0
K4B2G0846E-BC
K4B2G0846E-BC
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DDR3-1866 RDIMM SPD JEDEC
Abstract: No abstract text available
Text: Rev. 1.1, Jul. 2011 M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin VLP Registered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M392B2873GB0
M392B5673GB0
M392B5670GB0
240pin
78FBGA
256Mbx4
256Mx72
K4B1G0446G-BC*
DDR3-1866 RDIMM SPD JEDEC
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JESD-79
Abstract: ddr3 2133 jesd79 JESD79-3E
Text: NT4GC72B89C0NL K / NT4GC72C89C0NL(K) NT8GC72B4PC0NL(K) / NT8GC72C4PC0NL(K) / NT8GC72B8PC0NL(K) / NT8GC72C8PC0NL(K) NT16GC72B4NC0NL(K) / NT16GC72C4NC0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM
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NT4GC72B89C0NL
NT4GC72C89C0NL
NT8GC72B4PC0NL
NT8GC72C4PC0NL
NT8GC72B8PC0NL
NT8GC72C8PC0NL
NT16GC72B4NC0NL
NT16GC72C4NC0NL
512Mx72
1024Mx72
JESD-79
ddr3 2133
jesd79
JESD79-3E
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M378B
Abstract: No abstract text available
Text: Rev. 1.0, Aug. 2013 M378B5173DB0 M378B1G73DB0 240pin Unbuffered DIMM based on 4Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M378B5173DB0
M378B1G73DB0
240pin
78FBGA
K4B4G0846D-BCï
512Mbx8
1Gx64
M378B
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Untitled
Abstract: No abstract text available
Text: Rev. 1.1, Jul. 2011 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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M471B1G73BH0
204pin
78FBGA
135mv
125mV)
512Mx8
1Gx64
K4B4G0846B
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Untitled
Abstract: No abstract text available
Text: Rev. 1.2, Aug. 2011 M378B2873GB0 M391B2873GB0 M378B5673GB0 M391B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M378B2873GB0
M391B2873GB0
M378B5673GB0
M391B5673GB0
240pin
78FBGA
128Mbx8
256Mx64/x72
M378/91B5673GB0
K4B1G0846G-BCâ
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m378b5773dh0-c
Abstract: samsung ddr3 m378b5773dh0 K4B2G0846D-HC M378B5273DH0 spd M378
Text: Rev. 1.4, Jul. 2011 M378B5773DH0 M391B5773DH0 M378B5273DH0 M391B5273DH0 240pin Unbuffered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M378B5773DH0
M391B5773DH0
M378B5273DH0
M391B5273DH0
240pin
78FBGA
256Mbx8
512Mx64/x72
M378/91B5273DH0
K4B2G0846D-HC
m378b5773dh0-c
samsung ddr3
K4B2G0846D-HC
spd M378
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Untitled
Abstract: No abstract text available
Text: COVER DATA SHEET 16GB VLP Registered DDR3 SDRAM DIMM EBJ17RH4B6NA 2048M words 72 bits, 2 Ranks Specifications Features • Density: 16GB • Organization — 2048M words 72 bits, 2 ranks • Mounting 18 pieces of 8G bits DDR3 SDRAM with DDP (FBGA)
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EBJ17RH4B6NA
2048M
240-pin
1866Mbps/1600Mbps/1333Mbps
M01E1007
E2044E10
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Untitled
Abstract: No abstract text available
Text: COVER DATA SHEET 16GB Registered DDR3 SDRAM DIMM EBJ17RG4BFWD EBJ17RG4BFWP 2048M words 72 bits, 2 Ranks Specifications Features • Density: 16GB • Organization — 2048M words 72 bits, 2 ranks • Mounting 36 pieces of 4G bits DDR3 SDRAM sealed in
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EBJ17RG4BFWD
EBJ17RG4BFWP
2048M
240-pin
1866Mbps/1600Mbps/1333Mbps
M01E1007
E2004E10
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K4W2G1646E-BC11
Abstract: K4W2G1646E-BC1A k4w2g1646 K4W2G1646E
Text: Rev. 1.01, Aug. 2012 K4W2G1646E 2Gb gDDR3 SDRAM E-die 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K4W2G1646E
96FBGA
K4W2G1646E-BC11
K4W2G1646E-BC1A
k4w2g1646
K4W2G1646E
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NT5CB256M8bN-cg
Abstract: calibration of dvm specifications NT5CB128M16BP-DI
Text: 2Gb DDR3 SDRAM NT5CB256M8BN/NT5CB128M16BP NT5CC256M8BN/NT5CC128M16BP Feature Table 1: CAS Latency Frequency -BE* -CG/CGI* -DI* -EJ* DDR3 L -1066-CL7 DDR3 (L)-1333-CL9 DDR3(L)-1600-CL11 Speed Bins Units DDR3-1866-CL12 Parameter Min. Max. Min. Max. Min. Max.
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NT5CB256M8BN/NT5CB128M16BP
NT5CC256M8BN/NT5CC128M16BP
-1066-CL7
-1333-CL9
-1600-CL11
DDR3-1866-CL12
DDR3-1600
DDR3-1866
NT5CB256M8bN-cg
calibration of dvm specifications
NT5CB128M16BP-DI
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M471B5273DH0
Abstract: No abstract text available
Text: Rev. 1.31. Dec. 2010 M471B5773DH0 M471B5273DH0 204pin Unbuffered SODIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M471B5773DH0
M471B5273DH0
204pin
78FBGA
K4B2G0846D
256Mbx8
512Mx64
M471B5273DH0
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Untitled
Abstract: No abstract text available
Text: Rev. 1.01, Dec. 2010 M378B2873GB0 M391B2873GB0 M378B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.
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M378B2873GB0
M391B2873GB0
M378B5673GB0
240pin
78FBGA
128Mbx8
256Mx64
K4B1G0846G-BC
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M378B5173CB0
Abstract: m378b5173 Samsung ddr3 1600 SDRAM
Text: Rev. 1.1, Apr. 2012 M378B5173CB0 240pin Unbuffered DIMM based on 4Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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M378B5173CB0
240pin
78FBGA
125mV
135mv
125mV)
512Mbx8
K4B4G0846C-BC
M378B5173CB0
m378b5173
Samsung ddr3 1600 SDRAM
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Untitled
Abstract: No abstract text available
Text: Rev. 1.1, Jul. 2011 M393B1G70BH0 M393B1G73BH0 M393B2G70BH0 M393B2G73BH0 M393B4G70BM0 240pin Registered DIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND
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M393B1G70BH0
M393B1G73BH0
M393B2G70BH0
M393B2G73BH0
M393B4G70BM0
240pin
78FBGA
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