1878 TRANSISTOR Search Results

1878 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
CA3082	Rochester Electronics LLC	CA3082 - Small Signal Bipolar Transistor
CA3081F	Rochester Electronics LLC	CA3081 - Small Signal Bipolar Transistor
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold

1878 TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N6758 Abstract: 2N6902 QPL-19500 Text: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,	OCR Scan	2N6902 92cs-3374i 2N6902 2N6796 O-2I35AF O-205AF 2N6800 T0-205AF 2N6802 2N6758 QPL-19500	PDF
BOW83 Abstract: BDW83B BOW83C D 1878 TRANSISTOR bdw83a TRANSISTOR Bdw83d Text: BDW83, BDW83A, BDW83B, BDW83C, BDW83D NPN SILICON POWER DARLINGTONS Copyright O 1997, Power Innovations Limited. UK • AUGUST 1878 - REVISED MARCH 1997 Designed for Complementary Use with BDW84, BDW84A, BDW84B, BDW84C and BDW84D • 150 W at 2S°C Case Temperature	OCR Scan	BDW83, BDW83A, BDW83B, BDW83C, BDW83D BDW84, BDW84A, BDW84B, BDW84C BDW84D BOW83 BDW83B BOW83C D 1878 TRANSISTOR bdw83a TRANSISTOR Bdw83d	PDF
23A18 Abstract: No abstract text available Text: Low Saturation Voltage Switching Transistors E-pack SMD E-pack (Lead type) ITO-220 Bipolar transistors HSV series Bipolar transistors Absolute Maximum Ratings Type No. Electrical Characteristics VcEO VcBO VcEO V ebo Ic Ib Pt Tstg Tj [V] [V] [V ] [A ] [A ]	OCR Scan	ITO-220 23A1876 SC4978 ITO-220 23A18	PDF
tf s 544 a Abstract: 2sc4978 2sc497 Text: Low Saturation Voltage Sw itching Transistors L S V series Bipolar transistors Parts No. EIAJ No. Absolute Maximum Ratings V cbo VCEO V eb o lc Ib Pt [V] [V] [V] [A] [A] [W ] -5 1796 -7 1679 -5 -60 -7 1600 -12 1601 -15 2SC4668 7 4669 10 4148 7 60 7 40 12 4151	OCR Scan	2SA1795 2SC4668 2SA1876 2SC4978 ITO-220 IT0-220 tf s 544 a 2sc497	PDF
Untitled Abstract: No abstract text available Text: Low Saturation Voltage Switching Transistors E-pack S M D E-pack (Lead type) ITO-220 Bipolar transistors Absolute Maximum Ratings Electrical Characteristics VCEO h fE (sus) (min) [V ] (min) V cE V be 0jc fi too ts tf (sat) (sat) (max) (max) (max) (typ) (max) (max) (max)	OCR Scan	ITO-220 2SA1795 Fig79-3 2SA1876 2SC4978 ITO-220	PDF
SM 4151 Abstract: 2sc497 Text: Low Saturation Voltage Switching Transistors ITO-220 E-pack Lead type E-pack (SM D) Bipolar transistors Absolute Maximum Ratings Type No. Electrical C haracteristics VcEO (sus) (min) [V ] hFE VCE (sat) (max) [V ] V be (sat) (max) [V ] 0jc VCBO VCEO V ebo	OCR Scan	ITO-220 2SA1795 2SC4668 P1880 2SC4978 Fig78-3 SM 4151 2sc497	PDF
2sa1876 Abstract: No abstract text available Text: Low Saturation Voltage Switching Transistors IT O -2 2 0 E-pack Lead type E-pack (SM D) L S V series Bipolar transistors Absolute Maximum Ratings Type No. E IA J Electrical Characteristics VcBO VOEO V ebo Ic Is Pt Tstg Tj [V ] [V ] [V ] [A ] [A ] [W ] [•c]	OCR Scan	2SA1795 2SC4668 2SA1876 2SC4978 Fig79-3	PDF
smd transistor P2D Abstract: p2d smd smd code p2d PMBTA92 smd transistor marking PA MARKING CODE SMD IC smd P2D PMBTA93 P2d MARKING CODE Text: • bb53'ì31 □□2 Sa ciö 12Ö ■ APX N AMER PHILIPS/DISCRETE PMBTA92 PMBTA93 b?E T> SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a m icrominiature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.	OCR Scan	PMBTA92 PMBTA93 smd transistor P2D p2d smd smd code p2d smd transistor marking PA MARKING CODE SMD IC smd P2D PMBTA93 P2d MARKING CODE	PDF
Untitled Abstract: No abstract text available Text: bbS3^31 DDaSa^fi 126 • APX N AUER PHILIPS/DISCRETE PMBTA92 PMBTA93 b?E » 7 V SILICON EPITAXIAL TRANSISTORS P-N-P transistors in a m icrominiature SMD plastic envelope intended fo r surface mounted applications. They are prim arily intended fo r use in telephony and professional communication equipment.	OCR Scan	PMBTA92 PMBTA93	PDF
TO-92variant Abstract: No abstract text available Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package Surface-mount SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) yes no no Page 1870 1871 1872 SOT89 no yes 1873 1874 SOT96-1 (S08) SOT137-1 (S024) S O U 86 (T0-220 exposed tabs)	OCR Scan	OT54variant O-92variant) O-220AB) OT96-1 OT137-1 T0-220 OT186A O-220) OT223 OT226 TO-92variant	PDF
k-band gaas schottky diode Abstract: transistor 1877 1878 TRANSISTOR microwave transistor bfy193 Siemens Microwave BFY193 Microx 1882 hirel Microwave Semiconductors BAT DIODES Text: SIEMENS HiRel Discrete and Microwave Semiconductors Table of Contents Title Component Types Package Types Page 1 Preliminary Remarks 1870 2 2.1 2.2 2.3 Introduction to HiRel and Space Qualified Devices General Silicon Devices GaAs Devices 1870 1870 1871 1871	OCR Scan	BAS40, BXY42, BFY180, BFY193, BFY405, CFY25, CFY66, CLY29, CLY27, HPAC140 k-band gaas schottky diode transistor 1877 1878 TRANSISTOR microwave transistor bfy193 Siemens Microwave BFY193 Microx 1882 hirel Microwave Semiconductors BAT DIODES	PDF
SGSP256 Abstract: SGSP356 SP156 sgsp254 sgsp354 SGSP154 Text: S G S-THOMSON D7E D \| ÏTSTSB? 0017630 b \| / J 3 C ~ J r Î3 3 5 D 7 ^ 3 9 -0 7 SGSP154 /155 /156 SGSP254/255/258 SGSP354/355/356 ^-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SW ITCHIN G APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field	OCR Scan	SGSP154 SGSP254/255/258 SGSP354/355/356 50V/400V SGSP254 SGSP354 OT-82 O-220 SGSP155 SGSP256 SGSP356 SP156	PDF
TH3L10 Abstract: c 4235 transistor npn transistor c 4236 TH3L10 datasheet TH5P4 TH3L10 ic 883 transistor 2SC4310 tk3l10 2SA1795 Text: HIGH VOLTAGE • HIGH SPEED SWITCHING TRANSISTORS HDT series ITO-220 Bipolar transistors NPN Absolute Maximum Ratings VCEO VEBO IC IB PT Tstg TJ VCEO (sus) (min) [V] [V] [V] [A] [A] [W] [˚C] [˚C] [V] 6 3 10 15 4 6 800 7 hFE (min) VCE (sat) (max) VBE (sat)	Original	ITO-220 2SC4310 O-220 TH3L10 c 4235 transistor npn transistor c 4236 TH3L10 datasheet TH5P4 TH3L10 ic 883 transistor 2SC4310 tk3l10 2SA1795	PDF
2SC1871 Abstract: n 1895 1878 TRANSISTOR 2SA893 Text: 5 - - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English	OCR Scan	frc-25 2SC1871 n 1895 1878 TRANSISTOR 2SA893	PDF

BDW740 Abstract: BDW748 B0W74B D 1878 TRANSISTOR BOW74C Text: BDW74, BDW74A, BDW74B, BOW74C, BDW74D PNP SILICON POWER DARLINGTONS CopyilgW 0 1997. Power Innovations UmHed, UK AUG UST 1978 - REVISED M ARCH 1997 Designed for Complementary Use with BDW73, BDW73A, BDW73B, BDW73C and BDW73D TO-220 PACKAGE TOP VIEW 80 W at 25°C Case Temperature	OCR Scan	BDW74, BDW74A, BDW74B, BOW74C, BDW74D BDW73, BDW73A, BDW73B, BDW73C BDW73D BDW740 BDW748 B0W74B D 1878 TRANSISTOR BOW74C	PDF
U893BS Abstract: U832BS U893BSE 7812 AA PF2470 u893 D 1878 TRANSISTOR Text: U832BS 3-GHz Frequency Divider Description U832BS use TEMIC’s advanced bipolar process. RF input can be driven differential as well as single ended. Low current consumption makes the device suitable for mobile application. Features Benefits D U832BS divides by 2	Original	U832BS U832BS D-74025 02-Oct-98 U893BS U893BSE 7812 AA PF2470 u893 D 1878 TRANSISTOR	PDF
U832BS Abstract: D 1878 TRANSISTOR U832 U832BS-FP U893BSE RFDC Text: U832BS 3-GHz Frequency Divider Description U832BS use TEMIC’s advanced bipolar process. RF input can be driven differential as well as single ended. Low current consumption makes the device suitable for mobile application. Features Benefits D U832BS divides by 2	Original	U832BS U832BS D-74025 07-Jun-99 D 1878 TRANSISTOR U832 U832BS-FP U893BSE RFDC	PDF
U891BS Abstract: 1878 TRANSISTOR D 1878 TRANSISTOR U891 TRANSISTOR 7812 U893BSE U832BS 7812 ACT datasheet RS 7812 U834BS Text: U832BS / U834BS 3-GHz Frequency Divider Description U832BS and U834BS use TEMIC’s advanced bipolar process. RF input can be driven differential as well as single ended. Low current consumption makes the device suitable for mobile application. D U832BS divides by 2	Original	U832BS U834BS U834BS U834BS) D-74025 27-Jan-97 U891BS 1878 TRANSISTOR D 1878 TRANSISTOR U891 TRANSISTOR 7812 U893BSE 7812 ACT datasheet RS 7812	PDF
D 1878 TRANSISTOR Abstract: TRANSISTOR B 834 7812 pin out U834BS Telefunken u 690 ic 7848 Transistor 834 pin diagram of three pin ic 7812 7812 MAX INPUT VOLTAGE U834B Text: U 832 BS-FP U 834 BS-FP TELEFUNKEN Semiconductors 3-GHz Frequency Divider Description U 832 BS and U 834 BS use TELEFUNKEN’s advanced bipolar process. RF input can be driven differential as well as single ended. Low current consumption makes the device suitable for mobile application.	Original	D-74025 D 1878 TRANSISTOR TRANSISTOR B 834 7812 pin out U834BS Telefunken u 690 ic 7848 Transistor 834 pin diagram of three pin ic 7812 7812 MAX INPUT VOLTAGE U834B	PDF
PowerMOS Transistors Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24 Text: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)	Original	OT54variant O-92variant) O-220AB) OT96-1 OT137-1 OT186 O-220 OT186A O-220) OT223 PowerMOS Transistors 075E05 MS-012AA SO24 SSOP16 SSOP24	PDF
kc 2462 Abstract: ED36 symposium ED-36 gunn diode datasheet Betel d 1878 transistors A102 Text: ADI Reliability Handbook Table XII. 1200 ؎500 ppm 38 @ 90% C.I. ELFR FIT Rate No Failures Occurred in Other Stress Tests Conducted, e.g., HAST, T/C, etc. The ppm figure obtained in Table XII was at the time of qualification and based on a limited sample size. Recent figures based on statistically valid sample sizes indicate that the ELFR is running at less	Original		PDF
lmd18245 Abstract: stepper motor driver full bridge 6A 230v dc motor drive circuit diagram 4000 watts power amplifier circuit diagram LMD18245T TA15A 12 dc to 8v dc chopper electrical diagrams 12V BIPOLAR STEPPER MOTOR LT1234 12v DC SERVO MOTOR CONTROL circuit 2A Text: N a t i o n a l LMD18245 & S e m i c o n d u c t o r LMD18245 3A, 55V DMOS Full-Bridge Motor Driver General Description Features The LMD18245 full-bridge power amplifier incorporates all the circuit blocks required to drive and control current In a brushed type DC motor or one phase of a bipolar stepper	OCR Scan	LMD18245 LMD18245 DTb30b b50112M stepper motor driver full bridge 6A 230v dc motor drive circuit diagram 4000 watts power amplifier circuit diagram LMD18245T TA15A 12 dc to 8v dc chopper electrical diagrams 12V BIPOLAR STEPPER MOTOR LT1234 12v DC SERVO MOTOR CONTROL circuit 2A	PDF
c4460 Abstract: d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895 Text: SA\YO ^ Q u i c k S e 1 e c t i o n G u i d S P A CEO I > < V 1 5 1 8 2 K 11 K5 9 K15 K2 1 K3 1 K4 0 3 1 6 78 2 5 4 A 11 C28 C2 9 K5 4 77 39 99 4 2 5 Type T ransistors 3 4 «¡D a rlin g to n 5 8 mA ) 1 2 K4 2 7 K4 4 4 5 K546 K7 7 2 K2 2 7 0 3 K3 0 4	OCR Scan	1503/C 1565/C 1574/C 1590/C 1616/C 1654/C C3820, 1782/C B1235/D C3151 c4460 d1651 d1047 k d1047 B817 C2621 D1650 B1269 c4106 D895	PDF
MSC 5010 Abstract: Microwave Semiconductors MIL883 leak Text: SIEMENS 1 HiRel Discrete and Microwave Semiconductors Preliminary Remarks This paragraph gives an overview on the HiRel Discrete and Microwave Semiconductors available from Siemens. For detailed descriptions, screening procedures and quality specifications as well as full data sheets, please refer to our “HiRel Discrete and	OCR Scan		PDF

1878 TRANSISTOR Search Results

1878 TRANSISTOR Result Highlights (5)

1878 TRANSISTOR Datasheets Context Search

2N6758

BOW83

23A18

tf s 544 a

Untitled

SM 4151

2sa1876

smd transistor P2D

Untitled

TO-92variant

k-band gaas schottky diode

SGSP256

TH3L10

2SC1871

BDW740

U893BS

U832BS

U891BS

D 1878 TRANSISTOR

PowerMOS Transistors

kc 2462

lmd18245

c4460

MSC 5010