circuit diagram of luminous inverter
Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances
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BCE0013C
circuit diagram of luminous inverter
TC7600FNG
Sine wave PWM DC to AC Inverter ics
3 phase inverter 180 degree conduction mode wave
circuit diagram of toshiba washing machine
ULN2003APG
3 phase inverter 150 degree conduction mode wave
3 phase motor soft starter igbt circuit diagram
microwave cooking circuit diagram
TB6584FNG
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Untitled
Abstract: No abstract text available
Text: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,
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SIR-320ST3F
SIR-320ST3F
940nm
18deg.
940nm)
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Untitled
Abstract: No abstract text available
Text: SIR-320ST3F SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,
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SIR-320ST3F
SIR-320ST3F
940nm
18deg.
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MI-MV13
Abstract: M4T11 cmos 3.1 megapixel 18 pin image sensor V7514 "Micron Technology" cmos c16
Text: 1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR 1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR MT9M413 Micron Part Number: MT9M413C36STC Description The MI-MV13 is a 1,280H x 1,024V 1.3 megapixel CMOS digital image sensor capable of 500 frames-persecond (fps) operation. Its TrueSNAP electronic
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MI-MV13
10-bit
10-bit-wide
09005aef806807ca
MT9M413C36STC
M4T11
cmos 3.1 megapixel 18 pin image sensor
V7514
"Micron Technology" cmos c16
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PB-MV40
Abstract: Photobit MV40 D100 D109 D110 D119 D120 D129 D130
Text: PB-MV40 4 Megapixel CMOS Active-Pixel Digital Image Sensor 2001 Photobit Technology Corporation. All rights reserved. Photobit Technology Corporation is a wholly owned subsidiary of Photobit Corporation. Photobit, the wave and binary symbol, Behind Every Great Digital Image, and TrueBit are registered trademarks-and TrueColor, TrueSNAP Shuttered-Node
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PB-MV40
prod05
D-263
PB-MV40
Photobit
MV40
D100
D109
D110
D119
D120
D129
D130
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PB-MV13
Abstract: Photobit PB-1024 PHILIPS mpr24 8097 architecture MV13 DATA-71 data61 Data72 Photobit 720
Text: PB-MV13 20mm CMOS Active-Pixel Digital Image Sensor 2000 Photobit Corporation. All rights reserved. Photobit, the wave and binary symbol, and Behind Every Great Digital Image are registered trademarks, and TrueBit, TrueColor, TrueSNAP Shuttered-Node Active Pixel , Fully Flexible Open Architecture, Serial Host Interface Port, and Leading the Active Pixel Revolution are trademarks, of Photobit Corporation in
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PB-MV13
PB-MV13
280-Pin
Photobit
PB-1024
PHILIPS mpr24
8097 architecture
MV13
DATA-71
data61
Data72
Photobit 720
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GLW3801C
Abstract: GSB3801C GSG3801C GSW3801C
Text: G□□3801C φ3 Flush Mount Type LED Features Package φ3 Flush Mount Type. Water clear resin Product features ・Outer Dimension φ3 Flush Mount Type. ・Low power consumption type ・Operation temperature range Storage Temperature Operating Temperature
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G3801C
31TYP.
32TYP
470nm
530nm
40deg.
45deg.
18deg.
GLW3801C
GSB3801C
GSG3801C
GSW3801C
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GaAs 850 nm Infrared Emitting Diode
Abstract: toy IR remote control circuit diagram SIR-320ST3F
Text: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,
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SIR-320ST3F
SIR-320ST3F
940nm
18deg.
940nm)
GaAs 850 nm Infrared Emitting Diode
toy IR remote control circuit diagram
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PD015F52
Abstract: No abstract text available
Text: epitex PHOTO-DIODE Opto-Device & Custom LED PD015F52 Lead Pb Free Product – RoHS Compliant PD015F52 hermetical sealing type photo-diode PD015F52 is a PIN-photodiode featuring excellent responsibility and high photocurrent. This PIN-photodiode consists of a large chip with 1.3x1.3mm active area mounted
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PD015F52
PD015F52
18degrees.
1000Lx
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SIR-320ST3F
Abstract: No abstract text available
Text: SIR-320ST3F Sensors Infrared light emitting diode, top view type SIR-320ST3F The SIR-320ST3F is a GaAs infrared light emitting diode housed in clear plastic. This device has a high luminous efficiency and a 940nm spectrum suitable for silicon detectors. It is small and at the same time has a wide radiation angle,
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Original
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SIR-320ST3F
SIR-320ST3F
940nm
18deg.
940nm)
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PDF
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Document Number: AN4399 Rev. 1, 01/2013 Application Note High Precision Calibration of a Three-Axis Accelerometer by Mark Pedley 1 Introduction Contents 1 Three-axis accelerometers supplied for the consumer market are typically calibrated by the sensor
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AN4399
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L3374
Abstract: No abstract text available
Text: ODRKGF1283P-01 Electronic Components KGF1283P Issue Date:Sep 1, 2005 Driver-FET Plastic Package Type GENERAL DESCRIPTION The KGF1283P, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band driver FET that features high output power, high gain, and high efficiency. The KGF1283P specifications are guaranteed to a fixed
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KGF1283P
ODRKGF1283P-01
KGF1283P,
OT-89
KGF1283P
850MHz;
L3374
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HCS08 code example assembly
Abstract: HCS08 ADC code example assembly HCS08 c code example AN3031 HCS08 c code example interrupt HCS08 c code ATD function example microcontroller based temperature sensor temp sensor project IC Temperature Sensors Silicon temperature sensors
Text: Freescale Semiconductor Application Note Document Number: AN3031 Rev. 0, 09/2006 Temperature Sensor for the HCS08 Microcontroller Family by: Donnie Garcia MCD Applications, Austin, Texas Rafael Peralez RTAC Americas, Guadalajara, Mexico 1 Introduction This document explains how to use the temperature
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AN3031
HCS08
S08ADCV1)
HCS08 code example assembly
HCS08 ADC code example assembly
HCS08 c code example
AN3031
HCS08 c code example interrupt
HCS08 c code ATD function example
microcontroller based temperature sensor
temp sensor project
IC Temperature Sensors
Silicon temperature sensors
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C214P
Abstract: KGF1191 CB 0925 C107P cc 3061
Text: J2Q0016-38-71 作成：1998年 7月 ¡ 電子部品 KGF1191 l 前回作成：1998年 1月 KGF1191 小信号アンプ n 概要 KGF1191は低電圧、低電流動作、高利得、高アイソレーションを特長とするUHF帯からL帯用の 小信号2段アンプです。
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J2Q0016-38-71
KGF1191
KGF1191
KGF1191UHFL
3V850MHz
-35dBm
Z075W,
C214P
CB 0925
C107P
cc 3061
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GaAs FET sot89
Abstract: L3374
Text: ODRKGF1283-03 Electronic Components KGF1283 Issue Date:Nov 30, 2003 Driver-FET Plastic Package Type GENERAL DESCRIPTION The KGF1283, housed in a SOT-89 type plastic-mold package, is a discrete UHF-band driver FET that features high output power, high gain, and high efficiency. The KGF1283 specifications are guaranteed to a fixed
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KGF1283
ODRKGF1283-03
KGF1283,
OT-89
KGF1283
850MHz;
GaAs FET sot89
L3374
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GaAS fet sot89
Abstract: No abstract text available
Text: ODRKGF1313-03 Electronic Components KGF1313 Issue Date:Nov 30, 2003 Driver-FET Plastic Package Type GENERAL DESCRIPTION The KGF1313, housed in a SOT-89 type plastic-mold package, is a discrete driver FET with frequency ranging from UHF-band to L-band. This device features high output power and high efficiency. The KGF1313
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KGF1313
ODRKGF1313-03
KGF1313,
OT-89
KGF1313
27dBm)
GaAS fet sot89
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HCS08 ADC code example assembly
Abstract: HCS08 c code ATD function example HCS08 code example assembly HCS08 c code example HCS08 c code example interrupt VTEMP25 AN3031 microcontroller based temperature sensor HCS08 MC9S08QG8
Text: Freescale Semiconductor Application Note Document Number: AN3031 Rev. 1, 04/2010 Temperature Sensor for the HCS08 Microcontroller Family by: Donnie Garcia MCD Applications, Austin, Texas Rafael Peralez RTAC Americas, Guadalajara, Mexico 1 Introduction This document explains how to use the temperature
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AN3031
HCS08
S08ADCV1)
HCS08 ADC code example assembly
HCS08 c code ATD function example
HCS08 code example assembly
HCS08 c code example
HCS08 c code example interrupt
VTEMP25
AN3031
microcontroller based temperature sensor
MC9S08QG8
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PD1300-130D32-I
Abstract: No abstract text available
Text: epitex 5 STEM TYPE InGaAs PD Opto-Device & Custom LED Lead Pb Free Product RoHS compliant PD1300-130D32-I InGaAs PIN-PD PD1300-130D32-I is InGaAs PIN-photodiode featuring excellent responsibility and high photocurrent for near infrared. This PIN-photodiode consists of a large chip with 1mm dia. of active area mounted
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PD1300-130D32-I
PD1300-130D32-I
18degrees.
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MI-MV13
Abstract: 14 pin cmos IMAGE SENSOR 3-pin IR sensor monochrome cmos digital image image sensor MT9M413 mt9m413 CMOS digital image sensor with global shutter sensor g18 13-megapixel MT9M413C36STC
Text: 1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR 1.3-MEGAPIXEL CMOS ACTIVE-PIXEL DIGITAL IMAGE SENSOR MT9M413 Micron Part Number: MT9M413C36STC Description The MI-MV13 is a 1,280H x 1,024V 1.3 megapixel CMOS digital image sensor capable of 500 frames-persecond (fps) operation. Its TrueSNAP electronic
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MT9M413
MT9M413C36STC
MI-MV13
10-bit
10-bit-wide
09005aef806807ca
MT9M413C36STC
14 pin cmos IMAGE SENSOR
3-pin IR sensor
monochrome cmos digital image
image sensor MT9M413
mt9m413
CMOS digital image sensor with global shutter
sensor g18
13-megapixel
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N305
Abstract: Radian
Text: A C INTERFACE INC IDE D | 0023303 000041S 7 | ÂN305 N ia m e y . T -H I-H . STAN LEY IN FR A R ED LED unit:mm±o.2 > • P ackage Dim ensions ■FEATURES (1 High radiant power GaAs type (Po = 8m W TYP.) (2) 950nm peak wavelength (3) Narrow directivity(A0=18deg.)achieves a
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000041S
950nm
18deg.
25mW/sr)
0D533fl3
0DGG417
lF-50mA
S1/100
T-41-1
50roA)
N305
Radian
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TA12 11 N TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC TA 121 1N Bi-SCANABLE RGB PROCESSOR TA1211N is the RGB processing IC coping with bi-scan system. This IC converts Y / l/ Q or Y / U / V signals to R/G /B. To cope with bi-scan, this IC has w ide Y band. And
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TA1211N
068//F
10/uF
SDIP54-P-600-1
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contrans
Abstract: TA1211N digital analog convertor hbcq
Text: TO SHIBA TA1211N TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT T A 1 2 1 SILICON MONOLITHIC 1 N Bi-SCANABLE RGB PROCESSOR TA1211N is the RGB processing IC coping with bi-scan system. This IC converts Y / l/ Q or Y / U / V signals to R/G /B. To cope with bi-scan, this IC has wide Y band. And
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TA1211N
ta121
TA1211N
300kfÃ
110kfÃ
470kfÃ
068//F
SDIP54-P-600-1
contrans
digital analog convertor
hbcq
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Untitled
Abstract: No abstract text available
Text: O K I electronic components KGF1313 Power FET for UHF-Band and PCS Frequencies Plastic Mold Type GENERAL DESCRIPTION The KGF1313, housed in an SOT-89 type plastic-mold package, is a discrete power FET with frequencies ranging from the UHF band to the L band. This device features high efficiency and
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KGF1313
KGF1313,
OT-89
KGF1313
2424D
D227c
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LN57
Abstract: LN58 fl37
Text: PANASONIC INDL/ELEKÍSEÍIIJ 7EC D | t,T3Efi54 6932852 PANASONIC INDLtELECTRONIC 7 f? h lU C 7 h D - ^ 0 ^ 1 W X □ □ □ ‘iñBL. 72C 0 9 8 3 Ó ñ J~ _ _ D _ _ LN5 7 T-Hi-ll LN57 GaAs -f K /G a A s Infrared Light Emitting Diode
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950nm
18deg.
18deg
LN57
LN58
fl37
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