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Catalog Datasheet	MFG & Type	PDF	Document Tags
thyristor ABB 5stp 18f1600 Abstract: No abstract text available Text: Key Parameters VDSM = 1800 ITAVM = 1845 ITRMS = 2890 ITSM = 21000 VT0 = 0.83 rT = 0.230 V A A A V mΩ Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA 1028-03 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	PDF	18F1800 18F1800 18F1600 18F1200 67xVDRM CH-5600 thyristor ABB 5stp 18f1600
Untitled Abstract: No abstract text available Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 1660 A 2610 A 21000 A 0.83 V 0.230 mΩ Ω Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA1028-04 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	PDF	18F1800 5SYA1028-04 18F1800 18F1600 18F1200 CH-5600
5STP 18F1200 Abstract: No abstract text available Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 1800 V 1660 A 2610 A 21000 A 0.83 V 0.23 mΩ Ω Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA1028-04 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	PDF	18F1800 5SYA1028-04 18F1600 18F1200 CH-5600 5STP 18F1200
V1660 Abstract: No abstract text available Text: VDSM = 1800 V ITAVM = 1660 A ITRMS = 2610 A ITSM = 21000 A VT0 = 0.83 V rT = 0.230 mΩ Phase Control Thyristor 5STP 18F1800 Doc. No. 5SYA1028-04 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	PDF	18F1800 5SYA1028-04 18F1800 18F1600 18F1200 67xVDRM CH-5600 V1660