Untitled
Abstract: No abstract text available
Text: 101.2mm 4.0INCH SINGLE DIGIT NUMERIC DISPLAY Part Number: SC40-18YWA Yellow Features Description z Large size. The Yellow source color devices are made with Gallium z 4.0 inch digit height. Arsenide Phosphide on Gallium Phosphide Yellow Light z Low current operation.
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Original
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SC40-18YWA
APR/02/2011
DSAD2342
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PDF
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Untitled
Abstract: No abstract text available
Text: 100mm 4.0INCH SINGLE DIGIT NUMERIC DISPLAY Part Number: SC40-18YWA YELLOW Features Description z LARGE SIZE. The Yellow source color devices are made with Gallium z 4.0 INCH DIGIT HEIGHT. Arsenide Phosphide on Gallium Phosphide Yellow Light z LOW CURRENT OPERATION.
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Original
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100mm
SC40-18YWA
DSAD2342
AUG/02/2006
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PDF
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Untitled
Abstract: No abstract text available
Text: 100mm 4.0INCH SINGLE DIGIT NUMERIC DISPLAY P/N: SC40-18YWA Features YELLOW Description LARGE SIZE. The Yellow source color devices are made with Gallium 4.0 INCH DIGIT HEIGHT. Arsenide Phosphide on Gallium Phosphide Yellow Light LOW CURRENT OPERATION. Emitting Diode.
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Original
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100mm
SC40-18YWA
DSAD2342
NOV/29/2005
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PDF
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Untitled
Abstract: No abstract text available
Text: 100mm 4.0INCH SINGLE DIGIT NUMERIC DISPLAY P/N: SA40-18YWA Features YELLOW Description LARGE SIZE. The Yellow source color devices are made with Gallium 4.0 INCH DIGIT HEIGHT. Arsenide Phosphide on Gallium Phosphide Yellow Light LOW CURRENT OPERATION. Emitting Diode.
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Original
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100mm
SA40-18YWA
DSAD2334
NOV/29/2005
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PDF
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Untitled
Abstract: No abstract text available
Text: 100mm 4.0INCH SINGLE DIGIT NUMERIC DISPLAY SC40-18YWA Features lLARGE SIZE. l4.0 INCH DIGIT HEIGHT YELLOW Description The Yellow source color devices are made with Gallium . Arsenide Phosphide on Gallium Phosphide Yellow Light lLOW CURRENT OPERATION. lEXCELLENT CHARACTER APPEARANCE.
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Original
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100mm
SC40-18YWA
DSAD2342
APR/22/2003
SC40-18YWA
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PDF
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SA40-18YWA
Abstract: DP2-80
Text: 100mm 4.0INCH SINGLE DIGIT NUMERIC DISPLAY Part Number: SA40-18YWA Yellow Features Description z LARGE SIZE. The Yellow source color devices are made with Gallium z 4.0 INCH DIGIT HEIGHT. Arsenide Phosphide on Gallium Phosphide Yellow Light z LOW CURRENT OPERATION.
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Original
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100mm
SA40-18YWA
DSAD2334
JUN/04/2007
SA40-18YWA
DP2-80
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PDF
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Untitled
Abstract: No abstract text available
Text: 100mm 4.0INCH SINGLE DIGIT NUMERIC DISPLAY Part Number: SA40-18YWA YELLOW Features Description z LARGE SIZE. The Yellow source color devices are made with Gallium z 4.0 INCH DIGIT HEIGHT. Arsenide Phosphide on Gallium Phosphide Yellow Light z LOW CURRENT OPERATION.
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Original
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100mm
SA40-18YWA
DSAD2334
NOV/01/2006
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PDF
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Untitled
Abstract: No abstract text available
Text: 101.2mm 4.0INCH SINGLE DIGIT NUMERIC DISPLAY Part Number: SA40-18YWA Yellow Features Description z Large size. The Yellow source color devices are made with Gallium z 4.0 inch digit height. Arsenide Phosphide on Gallium Phosphide Yellow Light z Low current operation.
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Original
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SA40-18YWA
MAR/30/2011
DSAD2334
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PDF
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Untitled
Abstract: No abstract text available
Text: 100mm 4.0INCH SINGLE DIGIT NUMERIC DISPLAY SA40-18YWA Features YELLOW Description LARGE SIZE. The Yellow source color devices are made with Gallium 4.0 INCH DIGIT HEIGHT. Arsenide Phosphide on Gallium Phosphide Yellow Light LOW CURRENT OPERATION. Emitting Diode.
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Original
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100mm
SA40-18YWA
DSAD2334
MAR/26/2005
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PDF
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Untitled
Abstract: No abstract text available
Text: 100mm 4.0INCH SINGLE DIGIT NUMERIC DISPLAY Part Number: SC40-18YWA YELLOW Features Description z LARGE SIZE. The Yellow source color devices are made with Gallium z 4.0 INCH DIGIT HEIGHT. Arsenide Phosphide on Gallium Phosphide Yellow Light z LOW CURRENT OPERATION.
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Original
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100mm
SC40-18YWA
DSAD2342
NOV/01/2006
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PDF
|
Untitled
Abstract: No abstract text available
Text: 100mm 4.0INCH SINGLE DIGIT NUMERIC DISPLAY Part Number: SA40-18YWA YELLOW Features Description z LARGE SIZE. The Yellow source color devices are made with Gallium z 4.0 INCH DIGIT HEIGHT. Arsenide Phosphide on Gallium Phosphide Yellow Light z LOW CURRENT OPERATION.
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Original
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100mm
SA40-18YWA
DSAD2334
AUG/02/2006
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PDF
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SC40-18YWA
Abstract: No abstract text available
Text: 100mm 4.0INCH SINGLE DIGIT NUMERIC DISPLAY Part Number: SC40-18YWA Yellow Features Description z LARGE SIZE. The Yellow source color devices are made with Gallium z 4.0 INCH DIGIT HEIGHT. Arsenide Phosphide on Gallium Phosphide Yellow Light z LOW CURRENT OPERATION.
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Original
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100mm
SC40-18YWA
DSAD2342
JUN/04/2007
SC40-18YWA
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PDF
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Untitled
Abstract: No abstract text available
Text: 100mm 4.0INCH SINGLE DIGIT NUMERIC DISPLAY SA40-18YWA Features YELLOW Description !LARGE SIZE. The Yellow source color devices are made with Gallium . !4.0 INCH DIGIT HEIGHT Arsenide Phosphide on Gallium Phosphide Yellow Light !LOW CURRENT OPERATION. Emitting Diode.
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Original
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100mm
SA40-18YWA
DSAD2334
APR/22/2003
SA40-18YWA
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PDF
|
Untitled
Abstract: No abstract text available
Text: 100mm 4.0INCH SINGLE DIGIT NUMERIC DISPLAY SC40-18YWA Features YELLOW Description LARGE SIZE. The Yellow source color devices are made with Gallium 4.0 INCH DIGIT HEIGHT. Arsenide Phosphide on Gallium Phosphide Yellow Light LOW CURRENT OPERATION. Emitting Diode.
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Original
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100mm
SC40-18YWA
DSAD2342
MAR/26/2005
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PDF
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N mosfet sot-23
Abstract: sot-23 MARKING CODE 23A marking sot-23
Text: ST2318SRG N Channel Enhancement Mode MOSFET 3.9A DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly
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Original
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ST2318SRG
ST2318SRG
OT-23
OT-23
N mosfet sot-23
sot-23 MARKING CODE 23A
marking sot-23
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PDF
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Untitled
Abstract: No abstract text available
Text: N-Channel Enhancement Mode MOSFET Product Description Features The GSM9110 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to
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Original
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GSM9110
Lane11
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PDF
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SPN2318S23RGB
Abstract: SPN2318 5V 2A MOSFET N-channel 2A-13 Vgs 40V mosfet
Text: SPN2318 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN2318 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
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Original
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SPN2318
SPN2318
SPN2318S23RGB
5V 2A MOSFET N-channel
2A-13
Vgs 40V mosfet
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PDF
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DA03-11
Abstract: DC03-11GWA SA23-12SRWA SC-40 SA23-11HWA SA23-12HWA SC23-12HWA
Text: Kmgbright s in g le & d u a l d ig it n u m e ric Sx23 Sx40 Part No. SA23-11HWA SA23-12HWA SC23-11HWA SC23-12HWA SA23-11EWA SA23-12EWA SC23-11EWA SC23-12EWA SA23-11GWA SA23-12GWA SC23-11GWA SC23-12GWA SA23-11YWA SA23-12YWA SC23-11YWA SC23-12YWA SA23-11SRWA
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OCR Scan
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SA23-11HWA
SA23-12HWA
SC23-11HWA
SC23-12HWA
SA23-11EWA
SA23-12EWA
SC23-11EWA
SC23-12EWA
SA23-11GWA
SA23-12GWA
DA03-11
DC03-11GWA
SA23-12SRWA
SC-40
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PDF
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