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    onsemi 1N456A

    DIODE GEN PURP 30V 500MA DO35
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    onsemi 1N456ATR

    DIODE GEN PURP 30V 500MA DO35
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    DigiKey 1N456ATR Cut Tape 28,962 1
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    Microchip Technology Inc 1N456A

    DIODE GEN PURP 500MA DO35
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    Rochester Electronics LLC 1N456ATR

    HIGH CONDUCTANCE LOW LEAKAGE DIO
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    Microchip Technology Inc 1N456A-TR

    DIODE GEN PURP 500MA DO35
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    1N456A Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N456A Fairchild Semiconductor Small Signal Diode Original PDF
    1N456A Fairchild Semiconductor General Purpose Low Leakage Diode Original PDF
    1N456A Fairchild Semiconductor DIODE STANDARD RECOVERY RECTIFIER 30V 0.5A 2DO-35 BULK Original PDF
    1N456A National Semiconductor High Conductance Low Leakage Diode Original PDF
    1N456A Taitron Components Rectifier Diode, Ultra Fast Recovery Rectifier, Single, 30V, SOD-27|SOD-68, 2-Pin Original PDF
    1N456A APD Semiconductor Planar Diodes, DO-35 Case Scan PDF
    1N456A APD Semiconductor Planar Diodes Scan PDF
    1N456A BKC International 25 V, 500 mW low leakage diode Scan PDF
    1N456/A BKC International LOW LEAKAGE DIODES Scan PDF
    1N456A Crimson Semiconductor SILICON DIODES Scan PDF
    1N456A Fairchild Semiconductor Low leakage diode. Working inverse voltage 25V. Scan PDF
    1N456A Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    1N456A General Diode Germanium Diodes, DO-7 Case Scan PDF
    1N456A International Semiconductor SWITCHING DIODE Scan PDF
    1N456A Micronas Semiconductor General Purpose and Switching Diodes in a DO-35 Package Scan PDF
    1N456A Microsemi General Purpose Diode Scan PDF
    1N456A Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N456A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N456A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N456A Unknown Basic Transistor and Cross Reference Specification Scan PDF

    1N456A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ALL4150

    Abstract: 1N4606
    Text: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current


    Original
    PDF 00000S3 DO-35 ALL4152 ALL4153 ALL4450 ALL4451 ALL4453 ALL4454 500mW ALL4150 1N4606

    Untitled

    Abstract: No abstract text available
    Text: 1N456A Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current200m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.1.5 V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)


    Original
    PDF 1N456A Current200m Voltage30 Current25n StyleDO-35

    1N456A

    Abstract: No abstract text available
    Text: 1N456A Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 30 V IF AV Average Rectified Forward Current 500 mA IFSM Non-repetitive Peak Forward Surge Current


    Original
    PDF 1N456A DO-35 1N456A

    BF244 datasheet

    Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
    Text: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216


    Original
    PDF 1N456 CPD64 1N456A. 1N457 1N457A. 1N458 BF244 datasheet 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910

    1N456A

    Abstract: No abstract text available
    Text: 1N456A Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * T a Symbol = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 30 V IF AV Average Rectified Forward Current 500 mA IFSM Non-repetitive Peak Forward Surge Current


    Original
    PDF 1N456A DO-35 1N456A

    1N5426

    Abstract: 1N5208 AMERICAN POWER DEVICES 1n914
    Text: AMERICAN POWER DEVICES S3E D -7~02>-O ? 0737135 00000S3 0 • P L A N A R DIODES Type 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N890 1N914 1N3062 1N3064 1N3147 1N3600 1N3602 1N3605 1N4009 1N4148 1N4149 1N4150 Peak Minimum Inverse Forward Voltage Current


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    PDF 00000S3 DO-35 400mW 1N4150 1N4152 1N4153 1N4305 DO-35 1N5426 1N5208 AMERICAN POWER DEVICES 1n914

    Untitled

    Abstract: No abstract text available
    Text: 1N456AM Diodes Silicon Rectifier Military/High-RelN I O Max.(A) Output Current150m @Temp (øC) (Test Condition) V(RRM)(V) Rep.Pk.Rev. Voltage30 I(FSM) Max.(A) Pk.Fwd.Sur.Cur. V(FM) Max.(V) Forward Voltage1.0 @I(FM) (A) (Test Condition)100m @Temp. (øC) (Test Condition)


    Original
    PDF 1N456AM Current150m Voltage30 Current25n

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original
    PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    8F SOT-23 PNP on

    Abstract: 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor
    Text: Discrete POWER & Signal Technologies Surface Mount Diodes Computer Diodes by Descending BV LEADLESS GLASS PACKAGE Device No. Package No. BV (V) Min IR (nA) Max @ VR VF (V) (V) Min C trr (mA) (pF) Max (ns) Max 1 10 4 0.72 5 @ Max IF Test Conditions Process


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    PDF FDLL914 LL-34 FDLL914A FDLL914B FDLL916 FDLL916A 8F SOT-23 PNP on 1n4148 5D mark FDH777 mark fq sot 8F SOT23 PNP SOT-23 Mark ZF 1N4148 surface mount NDSJ105 5d surface mount diode BV 9y transistor

    fjt1101

    Abstract: FJT1102 1N456A 1N459A FJT1100 1N456 1N457 1N457A 1N458 1N458A
    Text: Device No. • Package No. Glass Package V RRM (V) c V F (nA) Min Max @ V R (V) (V) Min @ Max 'f (mA) (PF) Process No. Max 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125


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    PDF 1N456 DO-35 1N456A 1N457 1N457A 1N458 fjt1101 FJT1102 1N459A FJT1100 1N458A

    1n457

    Abstract: n456a DSAIH00025333 1N456A
    Text: B K C INTERNATIONAL □ 3E D I 117^^03 □□□□275 2 7 - - Ó / - Ó LOW LEAKAGE DIODES 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A ABSOLUTE MAXIMUM RATINGS • l„ • C 25 nA @ WIV 6.0 pF Temperatures Storage Temperature Range Maximum Junction Operating Temperature


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    PDF 1N456 1N456A 1N458A 1N457 1N459 1N457A 1N459A 1N458 500mW 1N456/A n456a DSAIH00025333

    1N456A

    Abstract: 1N457 1N459a N457 1N456 1N457A 1N458 1N458A 1N459 low leakage diodes
    Text: B K C INTERN ATI ONA L □ 3E LOW LEAKAGE DIODES D I 117^^03 □□□□275 5 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A ABSOLUTE MAXIMUM RATINGS • l„ • C 25 nA @ W IV 6.0 pF Temperatures Storage Temperature Range Maximum Junction Operating Temperature


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    PDF Q57sT~ 1N456 1N458 1N456A 1N458A 1N457 1N459 1N457A 1N459A 500mW 1N459a N457 1N458 1N458A 1N459 low leakage diodes

    FJT1

    Abstract: FJT1100 1N456A FJT1102
    Text: Device No. Package No. Glass Package VRRM c VF (V) (nA) Min Max @ VR (V) (V) Min @ Max •f (mA) <pF) Max Process No. 1N456 DO-35 30 25 25 1 40 1N456A DO-35 30 25 25 1 100 1N457 DO-35 70 25 60 1 20 1N457A DO-35 70 25 60 1 100 1N458 DO-35 150 25 125 1 7 1N458A


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    PDF 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N459 1N459A FDH300 DO-35 FJT1 FJT1100 FJT1102

    1N458B

    Abstract: 1N5426 AMERICAN POWER DEVICES 1n914 1N5208 1N444 1N456 1N456A 1N457 1N457A 1N458
    Text: AMERIC AN POWER D EVICES 53E D • 0737135 00000E3 — 1 DO-35 Case Type Peak Inverse Voltage Minimum Forward Current @25°C 1N456 1N456A 1N457 1N457A 1N458 PIV V mA 30 30 70 70 150 40 @ 100 @ 20 @ 100 @ 7@ If @ V f V 1 1 1 1 1 Maximum Capacitance Maximum


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    PDF 00000H3 DO-35 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N458B 1N619 1N5426 AMERICAN POWER DEVICES 1n914 1N5208 1N444

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    FDS01503

    Abstract: FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent
    Text: This Material National Semiconductor Surface Mount Diodes <S> m 2 t-i General Purpose & Specialty Diodes O Device Description Pkg. No. Pin Out Bv V Min •r (nA) @ Max Vr V Vf <V> Max If mA mA C PF Max to­ ns Max Test Cond. FDS01000 FAMILY Proc. Family


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    PDF D113D T-03-01 FDS01200 FDS01400 FDS01500 FDS01700 1N914 1N4149 FDH600 1N625 FDS01503 FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent

    1n914 surface mount diode

    Abstract: equivalent diode for 1n457 1N457 equivalent 1N459 equivalent 1N914 SOT-23 1N456A 1n4148 sot 1N4148 SOT-23 1n457a equivalent 1N914 diode SOT-23
    Text: This Surface Mount Diodes Material tr In a fc-J fc-> General Purpose & Specialty Surface Mount Diodes continued The National "MMBD" Series provides the SOT-23 electrical equivalent of the standard devices listed. Each family is available in 5 configurations.


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    PDF b501130 1n914 surface mount diode equivalent diode for 1n457 1N457 equivalent 1N459 equivalent 1N914 SOT-23 1N456A 1n4148 sot 1N4148 SOT-23 1n457a equivalent 1N914 diode SOT-23

    Untitled

    Abstract: No abstract text available
    Text: SWITCHING DIODES 200mW Part# Peak Voltage Continous Reverse Current VI B V 1N914 1N914A 1N914B I r <"A> 100 100 100 @ Forward Voltage VR (V) 5000 @ 5000 @ 5000 @ Capacitance C Maximum Reverse Recovery Time VF (V) @ lF (mA) <PF) V (n S ) 1.0 1.0 1.0 @ @ @


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    PDF 200mW 1N914 1N914A 1N914B 500mW 1N4148 1N4151 1N4154 1N4448 1N4454

    FDS01201

    Abstract: FDS04148 FDS01203 FSD01200 FDS01503 FDS01501 1N459 equivalent FDS01202 1N627 FDS01703
    Text: £ 3 National Semiconductor Surface Mount Diodes S> m 3: n O O General Purpose & Specialty Diodes PLASTIC PACKAGE Description Pkg. No. Pin Out By (V Min - I I Device Vr V Vp (V> Max 1000 75 0.715 1.0 0.855 10.0 1.1 50.0 1.3 100.0 1.0 100 See BAS 16 See BAS 16


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    PDF FDS01000 O-236 BAV70 BAV74 BAV99 BAW56 FDS01201 FDS04148 FDS01203 FSD01200 FDS01503 FDS01501 1N459 equivalent FDS01202 1N627 FDS01703

    AMERICAN POWER DEVICES 1n914

    Abstract: 1N5209 1N3064 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619
    Text: 3541563 FENWAL 83D 00920 E L E C T R O N I C S / APP DE ^ 3 S m S b 3 03 ODQD^BO D I 7 - -j . PLANAR DIODES DO-35 Case Type Peak Inverte Voltage Minimum Forward Current Maximum Capacitance Maximum Reverse Current @ 25*C lr /tA @150*C lr mA ~V T~ V


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    PDF DO-35 1N456 1N456A 1N457 1N457A 1N458 1N458A 1N619 1N890 1N914 AMERICAN POWER DEVICES 1n914 1N5209 1N3064

    1N627

    Abstract: la 4450 1N459a LL4148 LL4149 LL4150 LL4151 LL4152 LL4154 LL4446
    Text: SW ITC H IN G DIO DES, SU RFA CE MOUNT, MELF PACKAGE Peak Power IS I P a rt Num ber LL4148 LL4149 LL415Q LL4151 LL4152 U 4153 LL4154 LL4446 LL4447 LL4448 L.L4449 L 1.4450 LL4451 LL4453 LL4454 Re er e D iss ip a tio n Voltage P„ I*» V,M VòltS) M a x im u m


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    PDF LL4148 LL4149 LL4150 LL4151 LL4152 U4153 LL4154 LL4446 LL4447 LL4448 1N627 la 4450 1N459a LL4152

    bav20 itt

    Abstract: BAV21 ITT WG713 1n4148 ITT 1N914 ITT BA201 BAV17 BAV18 BAV19 BAV20
    Text: SILICON DIODES I T T Û7 SEMICONDUCTORS dË T | 4kf lHTSS 0a0S3Ht, 4 | ' G eneral Purpose and Sw itching Diodes in DO -35 Package Type Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipation Tempera­at25°C ture Tf Forward Voltage


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    PDF DO-35 BA170 BA201 BAV17 BAV18 BAV19 1N4449* 1N4450* 1N4451* 1N4453* bav20 itt BAV21 ITT WG713 1n4148 ITT 1N914 ITT BAV20

    WG713

    Abstract: 1n4148 ITT ITT3002 1N914 ITT BA170 BA201 BAV17 BAV18 BAV19 BAV20
    Text: SILICON DIODES I T T Û7 SEMICONDU CTORS dË T | 4^04^55 000232b 4 | ' General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver, Power Junction Rectified Dissipation Tempera­ Current l0 at25°C ture Tj Forward Voltage Drop Vf


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    PDF 000232b DO-35 Tempera-at25Â BA170 BA201 BAV17 BAV18 100fitoJB BAV19 1N4449* WG713 1n4148 ITT ITT3002 1N914 ITT BAV20

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    PDF