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    BA201 Price and Stock

    TAIYO YUDEN LSQBA201212T2R2M

    FIXED IND 2.2UH 260MA 0.23OHM SM
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    DigiKey LSQBA201212T2R2M Digi-Reel 2,937 1
    • 1 $0.14
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    LSQBA201212T2R2M Cut Tape 2,937 1
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    TTI LSQBA201212T2R2M Reel 3,000
    • 1 -
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    • 10000 $0.048
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    TAIYO YUDEN LSQBA201212T220K

    FIXED IND 22UH 80MA 1.7 OHM SMD
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    DigiKey LSQBA201212T220K Digi-Reel 2,900 1
    • 1 $0.14
    • 10 $0.106
    • 100 $0.0825
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    LSQBA201212T220K Cut Tape 2,900 1
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    TTI LSQBA201212T220K Reel 3,000
    • 1 -
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    • 10000 $0.044
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    TAIYO YUDEN LSQBA201212T100K

    FIXED IND 10UH 120MA 0.7 OHM SMD
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    DigiKey LSQBA201212T100K Cut Tape 2,900 1
    • 1 $0.14
    • 10 $0.106
    • 100 $0.0825
    • 1000 $0.06406
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    LSQBA201212T100K Digi-Reel 2,900 1
    • 1 $0.14
    • 10 $0.106
    • 100 $0.0825
    • 1000 $0.06406
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    Chip1Stop LSQBA201212T100K Cut Tape 3,000
    • 1 -
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    • 100 $0.0759
    • 1000 $0.0589
    • 10000 $0.0563
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    TAIYO YUDEN LSQBA201212T470K

    FIXED IND 47UH 60MA 3.7 OHM SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LSQBA201212T470K Cut Tape 2,890 1
    • 1 $0.14
    • 10 $0.116
    • 100 $0.0822
    • 1000 $0.05636
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    LSQBA201212T470K Digi-Reel 2,890 1
    • 1 $0.14
    • 10 $0.116
    • 100 $0.0822
    • 1000 $0.05636
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    Avnet Americas LSQBA201212T470K Reel 3,000
    • 1 -
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    • 10000 $0.03875
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    Mouser Electronics LSQBA201212T470K
    • 1 $0.14
    • 10 $0.094
    • 100 $0.074
    • 1000 $0.057
    • 10000 $0.048
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    TTI LSQBA201212T470K Reel 3,000
    • 1 -
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    • 10000 $0.048
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    TAIYO YUDEN LSQBA201212T6R8M

    FIXED IND 6.8UH 135MA 0.47OHM SM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LSQBA201212T6R8M Cut Tape 2,875 1
    • 1 $0.14
    • 10 $0.116
    • 100 $0.0822
    • 1000 $0.05636
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    Mouser Electronics LSQBA201212T6R8M 2,583
    • 1 $0.14
    • 10 $0.094
    • 100 $0.074
    • 1000 $0.057
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    Find more BA201 price and stock on Findchips.com

    BA201 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BA201 Fuji Electric FAST RECOVERY DIODE Original PDF
    BA201 XPiQ DC/DC Converter Original PDF
    BA201 ITT Industries Misc. Data Book Scans 1975/76 Scan PDF
    BA201 Micronas Semiconductor General Purpose and Switching Diodes in a DO-35 Package Scan PDF
    BA201 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    BA201 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    BA201 Unknown Cross Reference Datasheet Scan PDF
    BA201 Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BA201 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BA201 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BA201 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    BA201 Unknown Shortform Electronic Component Datasheets Short Form PDF
    BA201-2 Fuji Electric Fast Recovery Diode Original PDF
    BA201-4 Fuji Electric Fast Recovery Diode Original PDF
    BA201-6 Fuji Electric Fast Recovery Diode Original PDF

    BA201 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BA201 Series 200V to 600V / 1A FAST RECOVERY DIODE Outline Drawings, mm Features ø2.5MAX. ø0.56 +0.02 -0.01 Ultra small package, possible for 5mm pitch automatic insertion. High speed switching. High reliability. 25 MIN. 25 MIN. 3.0 ±0.2 Applications


    Original     		PDF BA201

    ROD20

    Abstract: No abstract text available
    Text: BA201 Series 200V to 600V / 1A FAST RECOVERY DIODE Outline Drawings, mm Features ø2.5MAX. ø0.56 +0.02 -0.01 Ultra small package, possible for 5mm pitch automatic insertion. High speed switching. High reliability. 25 MIN. 25 MIN. 3.0 ±0.2 Applications


    Original     		PDF BA201 ROD20

    BA201

    Abstract: 10MSA
    Text: BA201 Series 200V to 600V / 1A FAST RECOVERY DIODE Outline Drawings, mm Features ø2.5MAX. ø0.56 +0.02 -0.01 Ultra small package, possible for 5mm pitch automatic insertion. High speed switching. High reliability. 25 MIN. 25 MIN. 3.0 ±0.2 Applications


    Original     		PDF BA201 10MSA

    K8P2815UQB

    Abstract: No abstract text available
    Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8P2815UQB 128Mb 20000h-027FFFh 018000h-01FFFFh 010000h-017FFFh 008000h-00FFFFh 007000h-007FFFh 006000h-006FFFh 005000h-005FFFh 004000h-004FFFh K8P2815UQB

    BA258

    Abstract: ba146 BA148 ba198 BA204
    Text: K8S2815ET B B NOR FLASH MEMORY 128Mb B-die SLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8S2815ET 128Mb 00003FH 00007FH 0000BFH 000000H 44-Ball BA258 ba146 BA148 ba198 BA204

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.0, Nov 2010 K8S2815ET B E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16, Muxed Burst, Multi Bank datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S2815ET 128Mb 44FBGA, 078000h-07FFFFh 070000h-077FFFh 068000h-06FFFFh 060000h-067FFFh 058000h-05FFFFh 050000h-057FFFh 048000h-04FFFFh

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    TC58FVM7B5BTG65

    Abstract: TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS Lead-Free 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION The TC58FVM7T5/B5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		PDF TC58FVM7 TC58FVM7T5/B5B 134217728-bit, TC58FVM7B5BTG65 TC58FVM7T5BTG65 TC58FVM7B5 TC58FVM7B5B BA163 TOSHIBA TC58 BA138 diode BA209 TC58FVM7T5BTG TC58FVM7T5BTG-65

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash

    TC58FVM7B5BTG65

    Abstract: TC58FVM7t5BTG65 BK-10 HA145
    Text: TC58FVM7 T/B 5B(TG/XG)65 TOSHIBA MOS DIGITAL INTEGRATE CIRCUIT SILICON GATE CMOS 128M (8M x 16 BITS) CMOS FLASH MEMORY 1. DESCRIPTION Lead-Free The TC58FVM7(T/B)5B is a 134217728-bit, 3V read-only electrically erasable and programmable flash memory organized as


    Original     		PDF TC58FVM7 134217728-bit, TC58FVM7B5BTG65 TC58FVM7t5BTG65 BK-10 HA145

    BA254

    Abstract: ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT
    Text: TC58FVM7 T/B 2AFT(65/80) TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128-MBIT (16M x 8 BITS/8M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM7T2A/B2A is a 134217728-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 16777216 words × 8 bits or as 8388608 words × 16 bits. The TC58FVM7T2A/B2A features


    Original     		PDF TC58FVM7 128-MBIT TC58FVM7T2A/B2A 134217728-bit, BA254 ba148 TC58 TC58FVM7B2A TC58FVM7T2A TC58FVM7T2AFT65 TSOP56-P-1420-0 BA224 458000h TC58FVM7T2AFT

    Untitled

    Abstract: No abstract text available
    Text: PIC32 Industrial Host StackableUSB™ Microcontroller USB1032 Features The USB1032 is the ideal module for applications requiring more performance than typical micro-controllers have offered but not needing the full blast offered by an SBC. Wellsuited for applications confined to small, tight


    Original     		PDF PIC32â USB1032 32-bit RS232 512KB PIC32 CS1032 1032OPT1 1032OPT2

    Untitled

    Abstract: No abstract text available
    Text: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR


    Original     		PDF K8C54 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H

    BA188

    Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213
    Text: Rev. 1.0, Nov. 2010 K8S5615ETC 256Mb C-die NOR Flash 44FBGA, Muxed Burst, Multi Bank SLC 16M x16, 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S5615ETC 256Mb 44FBGA, no180000h-018FFFFh 0170000h-017FFFFh 0160000h-016FFFFh 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh BA188 BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213

    BA512

    Abstract: ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379
    Text: K8S5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Muxed Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary February 4, 2004 Preliminary 0.1 Revision - Correct Device ID of Table 9 from 22F8h to 22FEh


    Original     		PDF K8S5615ET 22F8h 22FEh 54MHz 66MHz 270sec 240sec 256Byte 00003FH 00007FH BA512 ba469 BA516 BA508 BA323 BA340 BA476 BA507 BA312 BA379

    BA251

    Abstract: 16N10
    Text: K8F56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F56 256Mb 1A0000h-1AFFFFh 190000h-19FFFFh 180000h-18FFFFh 170000h-17FFFFh 160000h-16FFFFh 150000h-15FFFFh 140000h-14FFFFh 130000h-13FFFFh BA251 16N10

    BA339

    Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA339 BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204

    BA339

    Abstract: K8C1215ET BA507
    Text: K8C12 13 15ET(B)M FLASH MEMORY 512Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8C12 512Mb 0110000h-011FFFFh 0100000h-010FFFFh 00F0000h-00FFFFFh 00E0000h-00EFFFFh 00D0000h-00DFFFFh 00C0000h-00CFFFFh 00B0000h-00BFFFFh 00A0000h-00AFFFFh BA339 K8C1215ET BA507

    BA95

    Abstract: 8A0000
    Text: K8C56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H BA95 8A0000

    Untitled

    Abstract: No abstract text available
    Text: b q 2 0 1 0 BENCHMARQ Gas Gauge IC Features General Description >• Conservative and repeatable measurement of available charge in rechargeable batteries The bq2010 Gas Gauge IC is intended for battery-pack or in-system installa­ tion to maintain an accurate record of


    OCR Scan     		PDF bq2010 120jiA 000417b bq2010 16-Pin

    bav20 itt

    Abstract: BAV21 ITT WG713 1n4148 ITT 1N914 ITT BA201 BAV17 BAV18 BAV19 BAV20
    Text: SILICON DIODES I T T Û7 SEMICONDUCTORS dË T | 4kf lHTSS 0a0S3Ht, 4 | ' G eneral Purpose and Sw itching Diodes in DO -35 Package Type Peak Inv. Voltage PIV Max. Aver. Rectified Current l0 Power Junction Dissipation Tempera­at25°C ture Tf Forward Voltage


    OCR Scan     		PDF DO-35 BA170 BA201 BAV17 BAV18 BAV19 1N4449* 1N4450* 1N4451* 1N4453* bav20 itt BAV21 ITT WG713 1n4148 ITT 1N914 ITT BAV20

    WG713

    Abstract: 1n4148 ITT ITT3002 1N914 ITT BA170 BA201 BAV17 BAV18 BAV19 BAV20
    Text: SILICON DIODES I T T Û7 SEMICONDU CTORS dË T | 4^04^55 000232b 4 | ' General Purpose and Switching Diodes in DO-35 Package Type Peak Inv. Voltage PIV Max. Aver, Power Junction Rectified Dissipation Tempera­ Current l0 at25°C ture Tj Forward Voltage Drop Vf


    OCR Scan     		PDF 000232b DO-35 Tempera-at25Â BA170 BA201 BAV17 BAV18 100fitoJB BAV19 1N4449* WG713 1n4148 ITT ITT3002 1N914 ITT BAV20